MTB150N10N3-0-T1-G [CYSTEKEC]

100V N-Channel Enhancement Mode MOSFET;


型号：	MTB150N10N3-0-T1-G
厂家：	CYSTECH ELECTONICS CORP.
描述：	100V N-Channel Enhancement Mode MOSFET
文件：	总9页 (文件大小：398K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C731N3

Issued Date : 2016.12.12

Revised Date :

CYStech Electronics Corp.

Page No. : 1/9

100V N-Channel Enhancement Mode MOSFET

MTB150N10N3

BVDSS

ID@ TA=25°C, VGS=10V

100V

1.9A

RDSON@VGS=10V, ID=1.6A

128mΩ(typ)

135mΩ(typ)

Features

• Simple drive requirement

• Small package outline

RDSON@VGS=4.5V, ID=1.3A

• Pb-free lead plating and halogen-free package

Symbol

Outline

SOT-23

MTB150N10N3

G：Gate S：Source D：Drain

Ordering Information

Device

Package

SOT-23

(Pb-free lead plating and halogen-free package)

Shipping

3000 pcs / Tape & Reel

MTB150N10N3-0-T1-G

Environment friendly grade : S for RoHS compliant products, G for RoHS

compliant

Packing spec, T1 : 3000 pcs / tape & reel,7” reel

Product rank, zero for no rank products

Product name

MTB150N10N3

CYStek Product Specification

Spec. No. : C731N3

Issued Date : 2016.12.12

Revised Date :

CYStech Electronics Corp.

Page No. : 2/9

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

VDS

Limits

Unit

Drain-Source Voltage

Gate-Source Voltage

100

±20

1.9

1.5

VGS

Continuous Drain Current @ TA=25°C, VGS=10V (Note 3)

Continuous Drain Current @ TA=70°C, VGS=10V (Note 3)

Pulsed Drain Current (Notes 1, 2)

IDM

Maximum Power Dissipation@ TA=25℃ (Note 3)

Maximum Power Dissipation@ TA=70℃ (Note 3)

Operating Junction and Storage Temperature Range

1.25

0.8

Tj ; Tstg

-55~+150

°C

Note : 1. Pulse width limited by maximum junction temperature.

2. Pulse width≤ 300μs, duty cycle≤2%.

3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad

Thermal Performance

Parameter

Symbol

RθJA

Limit

100

Unit

Thermal Resistance, Junction-to-Ambient, max

Thermal Resistance, Junction-to-Case, max

°C/W

RθJC

Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad

Electrical Characteristics (Tj=25°C, unless otherwise noted)

Symbol

Static

Min.

Typ.

Max.

Unit

Test Conditions

BV_DSS

V_GS(th)

I_GSS

100

1.0

2.5

165

190

V_GS=0V, I_D=250μA

V_DS=V_GS, I_D=250μA

μA

V_GS= 20V, V_DS=0V

V_DS=100V, V_GS=0V

V_DS=100V, V_GS=0V (Tj=85°C)

I_D=1.6A, V_GS=10V

I_DSS

128

135

*R_DS(ON)

*G_FS

mΩ

I_D=1.3A, V_GS=4.5V

3.9

V_DS=10V, I_D=1A

Dynamic

Ciss

Coss

Crss

t_d(ON)

t_r

262

V_DS=25V, V_GS=0V, f=1MHz

18.6

19.4

17.6

V_DS=50V, I_D=1A, V_GS=4.5V, R_G=6.8

t_d(OFF)

t_f

MTB150N10N3

CYStek Product Specification

Spec. No. : C731N3

Issued Date : 2016.12.12

Revised Date :

CYStech Electronics Corp.

Page No. : 3/9

Qgs

Qgd

7.4

2.5

3.4

V_DS=50V, I_D=1.6A, V_GS=4.5V

f=1MHz

Source-Drain Diode

*I_S

*I_SM

*V_SD

*trr

1.9

1.2

0.77

15.8

10.9

V_GS=0V, I_S=1.1A

I_F=1.1A, dI_F/dt=100A/μs

*Qrr

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Recommended Soldering Footprint

MTB150N10N3

CYStek Product Specification

Spec. No. : C731N3

Issued Date : 2016.12.12

Revised Date :

CYStech Electronics Corp.

Page No. : 4/9

Typical Characteristics

Brekdown Voltage vs Ambient Temperature

Typical Output Characteristics

1.4

1.2

10V,9V,8V,7V,6V,5V,4V,3.5V,3V

V_GS=2.5V

0.8

0.6

0.4

I_D=250μA,

V_GS=0V

-75 -50 -25

0 25 50 75 100 125 150 175

Tj, Junction Temperature(°C)

_DS, Drain-Source Voltage(V)

Static Drain-Source On-State resistance vs Drain Current

Reverse Drain Current vs Source-Drain Voltage

1000

100

1.2

0.8

0.6

0.4

0.2

Tj=25°C

V_GS=4.5V

V_GS= 10V

Tj=150°C

0.001

0.01

0.1

I_D, Drain Current(A)

I_DR, Reverse Drain Current(A)

Drain-Source On-State Resistance vs Junction Tempearture

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

200

180

160

140

120

100

2.4

V_GS=10V, I_D=1.6A

I_D=1.6A

1.6

1.2

0.8

0.4

R_DSON@Tj=25°C : 128mΩ typ.

-75 -50 -25

25 50 75 100 125 150 175

V_GS, Gate-Source Voltage(V)

Tj, Junction Temperature(°C)

MTB150N10N3

CYStek Product Specification

Spec. No. : C731N3

Issued Date : 2016.12.12

Revised Date :

CYStech Electronics Corp.

Page No. : 5/9

Typical Characteristics(Cont.)

Threshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage

1.6

1.4

1.2

1000

100

Ciss

I_D=1mA

0.8

0.6

0.4

0.2

oss

I_D=250 A

Crss

-75 -50 -25

25 50 75 100 125 150 175

V_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Gate Charge Characteristics

V_DS=50V

Forward Transfer Admittance vs Drain Current

V_DS=20V

0.1

V_DS=80V

V_DS=10V

Pulsed

Ta=25°C

I_D=1.6A

0.01

0.001

0.01

0.1

I_D, Drain Current(A)

Qg, Total Gate Charge(nC)

Maximum Drain Current vs Junction Temperature

Maximum Safe Operating Area

2.5

100

R_DS(ON)

Limited

100μs

1.5

1ms

10ms

0.1

0.01

T_A=25°C, Tj=150°, V_GS=10V

0.5

=100°C/W, Single Pulse

100ms

θJA

T_A=25°C, V_GS=10V, R =100°C/W

100

125

150

175

0.01

0.1

100

1000

_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

MTB150N10N3

CYStek Product Specification

Spec. No. : C731N3

Issued Date : 2016.12.12

Revised Date :

CYStech Electronics Corp.

Page No. : 6/9

Typical Characteristics(Cont.)

Typical Transfer Characteristics

Single Pulse Power Rating, Junction to Ambient

(Note on page 2)

V_DS=10V

T_J(MAX)=150°C

T_A=25°C

θJA

=100°C/W

0.01

0.1

100

V_GS, Gate-Source Voltage(V)

Pulse Width(s)

Transient Thermal Response Curves

D=0.5

0.2

1.R_θ(t)=r(t)*R

0.1

2.Duty Factor, D=t¹/t²

3.T^JM-T^A=P^DM*R_θ^JA(t)

0.05

4.R =100°C/W

0.02

0.01

Single Pulse

0.001

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

t₁, Square Wave Pulse Duration(s)

MTB150N10N3

CYStek Product Specification

Spec. No. : C731N3

Issued Date : 2016.12.12

Revised Date :

CYStech Electronics Corp.

Page No. : 7/9

Reel Dimension

Carrier Tape Dimension

MTB150N10N3

CYStek Product Specification

Spec. No. : C731N3

Issued Date : 2016.12.12

Revised Date :

CYStech Electronics Corp.

Page No. : 8/9

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3°C/second max.

Preheat

−Temperature Min(T^Smin)

−Temperature Max(TS max)

−Time(ts min to ts max)

100°C

150°C

60-120 seconds

150°C

200°C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183°C

60-150 seconds

240 +0/-5 °C

217°C

60-150 seconds

260 +0/-5 °C

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6°C/second max.

8 minutes max.

6 minutes max.

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTB150N10N3

CYStek Product Specification

Spec. No. : C731N3

Issued Date : 2016.12.12

Revised Date :

CYStech Electronics Corp.

Page No. : 9/9

SOT-23 Dimension

Marking:

Date Code

H5NT

Device Code

3-Lead SOT-23 Plastic

Surface Mounted Package

CYStek Package Code: N3

Style: Pin 1.Gate 2.Source 3.Drain

*: Typical

Inches

DIM

Millimeters

Inches

Millimeters

DIM

Min.

Max.

Min.

Max.

3.04

1.70

1.30

0.50

2.30

0.10

Min.

Max.

Min.

0.08

0.30

0.85

2.10

0.25

0.30

Max.

0.20

0.67

1.15

2.95

0.65

0.50

0.1102 0.1204

0.0472 0.0669

0.0335 0.0512

0.0118 0.0197

0.0669 0.0910

0.0000 0.0040

2.80

1.20

0.89

0.30

1.70

0.00

0.0032

0.0118

0.0335

0.0830

0.0098

0.0118

0.0079

0.0266

0.0453

0.1161

0.0256

0.0197

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTB150N10N3

CYStek Product Specification

MTB150N10N3-0-T1-G [CYSTEKEC]

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