MTB14A03V8 [CYSTEKEC]
Dual N-Channel Logic Level Enhancement Mode MOSFET; 双N沟道逻辑电平增强模式MOSFET
| 型号： | MTB14A03V8 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | Dual N-Channel Logic Level Enhancement Mode MOSFET |
| 文件： | 总9页 (文件大小：357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 1/9
CYStech Electronics Corp.
Dual N-Channel Logic Level Enhancement Mode MOSFET
BVDSS
30V
MTB14A03V8
ID
8.5A
11.2mΩ
16mΩ
VGS=10V, ID=6A
VGS=4.5V, ID=4A
RDSON(TYP)
Description
×
The MTB14A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3 3 package,
providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost effectiveness.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
DFN3ꢀ3
MTB14A03V8
G：Gate D：Drain S：Source
Pin 1
Ordering Information
Device
Package
DFN3ꢀ3
(Pb-free lead plating and halogen-free package)
Shipping
MTB14A03V8-0-T1-G
3000 pcs / Tape & Reel
MTB14A03V8
CYStek Product Specification
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 2/9
CYStech Electronics Corp.
The following characteristics apply to each MOSFET.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Symbol
VDS
Limits
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
±20
8.5
VGS
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
ID
IDM
PD
A
6.8
40 *1
Single device operation
Total Power Dissipation
1.5 *2
1.24 *2
W
Single device value at dual operation
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
Thermal Data
Parameter
Symbol Value
Unit
°C/W
Max. Thermal Resistance, Junction-to-ambient, single device operation
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Note : 1. Pulse width limited by maximum junction temperature.
84 *2
Rth,j-a
101 *2
2. Surface mounted on a 1 in² pad of 2oz copper, t≤5s. In practice Rth,j-a will be determined by customer’s PCB characteristics.
216°C/W when mounted on a minimum pad of 2 oz. copper.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
GFS
30
1
-
-
1.7
9
-
2.5
-
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=6A
V
S
*1
nA
±
±
IGSS
-
-
-
-
-
-
-
100
1
VGS= 20V
VDS =24V, VGS =0
VDS =24V, VGS =0, Tj=125°C
VGS =10V, ID=6A
IDSS
μA
25
15
23
11.2
16
Ω
m
RDS(ON) *1
Dynamic
-
VGS =4.5V, ID=4A
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
1105
117
100
16
3.3
4
12
9
33
12
-
-
-
-
-
-
-
-
-
-
pF
VDS=15V, VGS=0V, f=1MHz
VDS=15V, VGS=10V, ID=8.5A
Qg
Qgs
Qgd
*1, 2
*1, 2
*1, 2
nC
ns
td(ON) *1, 2
tr
*1, 2
VDS=15V, ID=1A, VGS=10V, RGS=6Ω
td(OFF) *1, 2
tf
*1, 2
MTB14A03V8
CYStek Product Specification
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 3/9
CYStech Electronics Corp.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Source-Drain Diode
-
-
-
-
-
-
-
IS
2.3
9.2
1.2
-
*1
A
ISM *3
VSD *1
trr
0.74
55
6
V
ns
nC
IS=2.3A, VGS=0V
IF=2.3A, dIF/dt=100A/μs
Qrr
-
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTB14A03V8
CYStek Product Specification
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
1.2
1
40
35
30
VGS=4V
10V,9V,8V,7V,6V,5V
25
20
15
10
5
0.8
0.6
0.4
VGS=3V
VGS=2V
μ
ID=250 A,
VGS=0V
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
100
10
1.2
VGS=0V
1
0.8
0.6
0.4
0.2
Tj=25°C
VGS=3V
Tj=150°C
VGS=4.5V
VGS=10V
1
0
4
8
12
16
20
0.01
0.1
1
10
100
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
VGS=10V, ID=6A
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
280
240
200
160
120
80
2
ID=6A
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
RDSON @ Tj=25°C : 11.2 mΩ typ
40
0
-60
-20
20
60
100
140
180
0
2
4
6
GS, Gate-Source Voltage(V)
8
10
V
Tj, Junction Temperature(°C)
MTB14A03V8
CYStek Product Specificatio
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
1.2
1
10000
1000
100
μ
ID=250 A
Ciss
C
oss
0.8
0.6
0.4
Crss
10
-75 -50 -25
0
25 50 75 100 125 150 175
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
VDS=15V
VDS=10V
VDS=5V
8
6
4
2
0
VDS=5V
VGS=10V
1
0.1
0.01
Ta=25°C
Pulsed
ID=8.5A
0
4
8
12
16
20
0.001
0.01
0.1
1
10
ID, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
10
9
8
7
6
5
4
3
2
1
0
100
10
RDSON
Limite
μ
100 s
1ms
1
10ms
100ms
1s
TA=25°C, Tj=150°C
θ
GS=10V, R JA=84°C/W
0.1
0.01
V
Single Pulse
θJA
TA=25°C, VGS=10V, R =84°C/W
DC
25
50
75
100
125
150
175
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
MTB14A03V8
CYStek Product Specification
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
40
50
40
30
20
10
0
VDS=10V
35
TJ(MAX)=150°C
TA=25°C
30
25
20
15
10
5
θ
JA=84°C/W
0
0.001
0.01
0.1
1
10
100
1000
0
1
1
2
3
4
5
VGS, Gate-Source Voltage(V)
Pulse Width(s)
Transient Thermal Response Curves
D=0.5
0.2
θ
θJA
1.R JA(t)=r(t)*R
0.1
0.1
1
2
2.Duty Factor, D=t /t
0.05
3.TJM-TA=PDM*RθJA(t)
θJA=84°C/W
4.R
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB14A03V8
CYStek Product Specification
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 7/9
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTB14A03V8
CYStek Product Specification
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 8/9
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB14A03V8
CYStek Product Specification
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 9/9
CYStech Electronics Corp.
DFN3ꢀ3 Dimension
Marking:
D1 D1 D2 D2
B14
A03
Date
Code
S1 G1 S2 G2
8-Lead DFN3ꢀ3 Plastic Package
CYStek Package Code: V8
Millimeters
DIM
Inches
Millimeters
Inches
Min.
DIM
Min.
Max.
Min.
Max.
Min.
0.200
0.550
0.300
0.180
0.000
0.000
0.315
9°
Max.
0.400
0.750
0.500
0.480
0.100
0.100
0.515
13°
Max.
0.016
0.030
0.020
0.019
0.004
0.004
0.020
13°
A
0.650
0.850
0.026
0.033
b
e
L
L1
L2
L3
H
0.008
0.022
0.012
0.007
0.000
0.000
0.012
9°
A1
A2
D
D1
D2
E
0.152 REF
0.006 REF
0.000
2.900
0.935
0.280
2.900
3.150
0.050
3.100
1.135
0.480
3.100
3.450
0.000
0.114
0.037
0.011
0.114
0.124
0.002
0.122
0.045
0.019
0.122
0.136
E1
θ
E2
1.535
1.935
0.060
0.076
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB14A03V8
CYStek Product Specification
相关型号：
©2020 ICPDF网 联系我们和版权申明