BTP5401N3 [CYSTEKEC]
General Purpose PNP Epitaxial Planar Transistor; 通用PNP外延平面晶体管
| 型号： | BTP5401N3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | General Purpose PNP Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C307N3
Issued Date : 2003.06.27
Revised Date :
CYStech Electronics Corp.
Page No. : 1/4
General Purpose PNP Epitaxial Planar Transistor
BTP5401N3
Description
• The BTP5401N3 is designed for general purpose amplification.
• Large IC , IC( Max) = -0.6A
• High BVCEO, BVCEO= -150V
• Complementary to BTN5551N3
.
Symbol
Outline
BTP5401N3
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
IC
-160
V
V
-150
-5
V
Collector Current
-0.6
A
Power Dissipation
Pd
225
mW
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
RθJA
Tj
Tstg
556
150
-55~+150
°C
BTP5401N3
CYStek Product Specification
Spec. No. : C307N3
Issued Date : 2003.06.27
Revised Date :
CYStech Electronics Corp.
Page No. : 2/4
Characteristics
(Ta=25°C)
Symbol
Min. Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
-160
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
IC=-100µA
IC=-1mA
-150
-
V
-5
-
-
V
IE=-10µA
VCB=-120V
VEB=-3V
-50
-50
-0.2
-0.5
-1
nA
nA
V
IEBO
-
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
1
2
1
2
-
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
-
V
-
V
-
-1
-
V
hFE
hFE
hFE
fT
1
2
3
50
56
50
100
-
-
390
-
-
-
300
6
MHz
pF
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
Cob
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 2
Rank
K
P
Q
R
Range
56~120
82~180
120~270
180~390
BTP5401N3
CYStek Product Specification
Spec. No. : C307N3
Issued Date : 2003.06.27
Revised Date :
CYStech Electronics Corp.
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
100
10
1000
100
10
VCE(SAT)@IC=10IB
HFE@VCE=5V
0.1
0.1
0
1
10
100
0.1
1
10
100
Collector Current---IC(mA)
Collector Current---IC(mA)
Cutoff Frequency vs Collector Current
Saturation Voltage vs Collector Current
1
1000
FT@VCE=12V
VBE(SAT)@IC=10IB
0.1
100
1
10
100
1
10
100
1000
Collector Current---IC(mA)
Collector Current---IC(mA)
Power Derating Curve
250
200
150
100
50
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
BTP5401N3
CYStek Product Specification
Spec. No. : C307N3
Issued Date : 2003.06.27
Revised Date :
CYStech Electronics Corp.
Page No. : 4/4
SOT-23 Dimension
A
L
Marking:
3
2L
S
B
1
2
V
G
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
Style: Pin 1.Base 2.Emitter 3.Collector
D
K
H
J
*: Typical
Inches
Millimeters
Inches
Min. Max.
Millimeters
DIM
DIM
Min.
Max.
Min.
Max.
3.04
1.60
1.30
0.50
2.30
0.10
Min.
Max.
0.177
0.67
1.15
2.75
0.65
A
B
C
D
G
H
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
2.80
1.20
0.89
0.30
1.70
0.013
J
K
L
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
0.085
0.32
0.85
2.10
0.25
S
V
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTP5401N3
CYStek Product Specification
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