BTP8550SA3 [CYSTEKEC]
General Purpose PNP Epitaxial Planar Transistor; 通用PNP外延平面晶体管型号: | BTP8550SA3 |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | General Purpose PNP Epitaxial Planar Transistor |
文件: | 总4页 (文件大小:153K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C312A3
Issued Date : 2003.10.07
Revised Date :
CYStech Electronics Corp.
Page No. : 1/4
General Purpose PNP Epitaxial Planar Transistor
BTP8550SA3
Description
The BTP8550SA3 is designed for use in output amplifier of portable radios in class B push pull operation.
Features
• Large collector current , IC= -700mA
• Low VCE(sat)
• Complementary to BTN8050SA3
.
Symbol
Outline
BTP8550SA3
TO-92
B:Base
C:Collector
E:Emitter
E C B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
-25
-20
V
V
-5
V
-700
-100
625
mA
mA
mW
°C/W
°C
Base Current
IB
Power Dissipation
Pd
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
RθJA
Tj
200
150
Tstg
-55~+150
°C
BTP8550SA3
CYStek Product Specification
Spec. No. : C312A3
Issued Date : 2003.10.07
Revised Date :
CYStech Electronics Corp.
Page No. : 2/4
Characteristics
(Ta=25°C)
Symbol
Min. Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
-25
-20
-5
-
-
-
V
IC=-10µA
IC=-1mA
IE=-10µA
VCB=-20V
IC=-500mA, IB=-50mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
-
-
V
-
-
V
-
-1
-0. 5
-1
500
-
µA
V
*VCE(sat)
*VBE(on)
-
-
-
-
V
*hFE
*hFE
fT
1
2
100
-
-
100
-
-
-
150
-
-
10
MHz
pF
Cob
-
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 1
Rank
C
D
E
Range
100~180
160~300
250~500
BTP8550SA3
CYStek Product Specification
Spec. No. : C312A3
Issued Date : 2003.10.07
Revised Date :
CYStech Electronics Corp.
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
100
10
1000
VCE = 5V
VCE(SAT) @ IC=20IB
VCE = 2V
100
VCE = 1V
VCE(SAT) @ IC=10IB
10
1
1
1
0
10
100
1000
1000
200
1
10
100
1000
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
On Voltage vs Collector Current
10000
1000
100
10000
1000
100
VBE(ON) @ VCE=1V
VBE(SAT) @ IC=10IB
10
100
1
10
100
1000
Collector Current---IC(mA)
Collector Current---IC(mA)
Power Derating Curve
700
600
500
400
300
200
100
0
50
100
150
Ambient Temperature---TA(℃)
BTP8550SA3
CYStek Product Specification
Spec. No. : C313A3
Issued Date : 2003.10.07
Revised Date :
CYStech Electronics Corp.
Page No. : 4/3
TO-92 Dimension
α2
A
Marking:
B
1
2
3
P8550S
α3
C
E
D
H
G
α1
I
Style: Pin 1.Emitter 2.Collector 3.Base
F
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Millimeters
Inches
Min. Max.
Millimeters
DIM
DIM
Min.
Max.
Min.
Max.
4.83
4.83
-
Min.
Max.
0.56
*2.54
*1.27
*5°
*2°
*2°
A
B
C
D
E
F
0.1704 0.1902
0.1704 0.1902
4.33
4.33
12.70
0.36
-
G
H
0.0142 0.0220
0.36
-
-
-
-
-
*0.1000
*0.0500
*5°
-
-
-
-
-
0.5000
-
I
0.0142 0.0220
*0.0500
0.1323 0.1480
0.56
*1.27
3.76
α1
α2
α3
-
*2°
3.36
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTP8550A3
CYStek Product Specification
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