BTPA56N3-0-T1-G [CYSTEKEC]
PNP Epitaxial Planar Transistor;
| 型号： | BTPA56N3-0-T1-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | PNP Epitaxial Planar Transistor |
| 文件： | 总8页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C217N3
Issued Date : 2013.06.26
Revised Date :
CYStech Electronics Corp.
Page No. : 1/8
PNP Epitaxial Planar Transistor
BTPA56N3
Features
• Low VCE(sat), VCE(sat)=-0.07 V (typ), at IC / IB = -100mA / -10mA
• Excellent current gain characteristics
• Pb-free lead plating and halogen-free package
Symbol
Outline
SOT-23
BTPA56N3
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
VCBO
VCEO
VEBO
IC
-80
-80
-5
-500
-1 (Note 1)
mA
A
ICP
IB
-200
mA
Power Dissipation
0.225
PD
W
Power Dissipation
0.35 (Note 2)
Operating Junction and Storage Temperature Range
Tj ; Tstg
-65~+150
°C
BTPA56N3
CYStek Product Specification
Spec. No. : C217N3
Issued Date : 2013.06.26
Revised Date :
CYStech Electronics Corp.
Page No. : 2/8
Thermal Data
Parameter
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
Rth,j-a
Rth,j-a
Value
556
357
Unit
°C/W
°C/W
:
Note 1. Single Pulse , Pw=300μs, duty cycle≤2%.
2. Device mounted on FR-4 board 1.6” ×1.6” ×0.06” .
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
fT
-80
-80
-5
-
-
-
-
-
-
100
100
50
-
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
nA
mV
V
V
-
-
MHz
pF
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-100μA, IC=0
VCB=-80V, IE=0
VCB=-60V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-100mA
-100
-100
-100
-250
-1.2
-1.2
-
-
-
-
-70
-0.8
-0.73
-
-
200
7
VCE=-1V, IC=-100mA, f=100MHz
VCB=-10V, f =1MHz
Cob
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
BTPA56N3-0-T1-G
3000 pcs / Tape & Reel
BTPA56N3
CYStek Product Specification
Spec. No. : C217N3
Issued Date : 2013.06.26
Revised Date :
CYStech Electronics Corp.
Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.25
0.2
5mA
1mA
2.5mA
0.15
0.1
500uA
1.5mA
1mA
400uA
300uA
0.05
0
200uA
-IB=500uA
-IB=100uA
0
1
2
3
4
5
6
0
1
2
3
4
5
6
-VCE, Collector-to-Emitter Voltage(V)
-VCE, Collector-to-Emitter Voltage(V)
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.4
1.2
1
20mA
50mA
8mA
6mA
25mA
4mA
0.8
0.6
0.4
0.2
0
10mA
-IB=5mA
-IB=2mA
0
1
2
3
4
5
6
0
1
2
3
4
5
6
-VCE, Collector-to-Emitter Voltage(V)
-VCE, Collector-to-Emitter Voltage(V)
Current Gain vs Collector Current
Current Gain vs Collector Current
1000
1000
100
10
VCE=-1V
VCE=-2V
100
Ta=125°C
Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
Ta=-40°C
10
0.1
1
10
100
1000
0.1
1
10
100
1000
-IC, Collector Current(mA)
-IC, Collector Current(mA)
BTPA56N3
CYStek Product Specification
Spec. No. : C217N3
Issued Date : 2013.06.26
Revised Date :
CYStech Electronics Corp.
Page No. : 4/8
Typical Characteristics(Cont.)
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCE=-5V
VCESAT@IC=10IB
100
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
Ta=-40°C
10
10
0.1
1
10
100
1000
0.1
1
10
100
1000
-IC, Collector Current(mA)
-IC, Collector Current(mA)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCESAT@IC=20IB
VCESAT@IC=50IB
100
100
Ta=125°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
Ta=-40°C
10
10
0.1
1
10
100
1000
0.1
1
10
100
1000
-IC, Collector Current(mA)
-IC, Collector Current(mA)
On Voltage vs Collector Current
Saturation Voltage vs Collector Current
VBESAT@IC=10IB
10000
1000
100
10000
1000
100
Ta=-40°C
VBEON@VCE=-1V
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
1
10
100
1000
0.1
1
10
100
1000
-IC, Collector CurrentmA)
-IC, Collector Current(mA)
BTPA56N3
CYStek Product Specification
Spec. No. : C217N3
Issued Date : 2013.06.26
Revised Date :
CYStech Electronics Corp.
Page No. : 5/8
Typical Characteristics(Cont.)
Cutoff Frequency vs Collector Current
Capacitance vs Reverse-biased Voltage
1000
100
10
100
10
1
VCE=-1V
Cib
Cob
1
10
100
1000
0.1
1
10
100
-VR, Reverse-biased Voltage(V)
-IC, Collector Current(mA)
Power Derating Curve
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature---TA(℃)
BTPA56N3
CYStek Product Specification
Spec. No. : C217N3
Issued Date : 2013.06.26
Revised Date :
CYStech Electronics Corp.
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
BTPA56N3
CYStek Product Specification
Spec. No. : C217N3
Issued Date : 2013.06.26
Revised Date :
CYStech Electronics Corp.
Page No. : 7/8
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTPA56N3
CYStek Product Specification
Spec. No. : C217N3
Issued Date : 2013.06.26
Revised Date :
CYStech Electronics Corp.
Page No. : 8/8
SOT-23 Dimension
Marking:
Product Code
2G
Date Code: Year+Month
Year: 3→2003, 4→2004
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Base 2.Emitter 3.Collector
*: Typical
Inches
DIM
Millimeters
Inches
Min. Max.
Millimeters
DIM
Min.
Max.
Min.
Max.
3.04
1.70
1.30
0.50
2.30
0.10
Min.
Max.
0.20
0.67
1.15
2.95
0.65
0.50
A
B
C
D
G
H
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
2.80
1.20
0.89
0.30
1.70
0.00
J
K
L
S
V
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
0.08
0.30
0.85
2.10
0.25
0.30
L1
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTPA56N3
CYStek Product Specification
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