BTP9050N3-0-T1-G [CYSTEKEC]
High Voltage PNP Epitaxial Planar Transistor;
| 型号： | BTP9050N3-0-T1-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | High Voltage PNP Epitaxial Planar Transistor |
| 文件： | 总7页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C619N3
Issued Date : 2012.08.21
Revised Date :
CYStech Electronics Corp.
Page No. : 1/7
High Voltage PNP Epitaxial Planar Transistor
BTP9050N3
Description
• High breakdown voltage. (BVCEO=-500V)
• Low saturation voltage, typical VCE(sat) =-0.11V at Ic/IB =-20mA/-2mA.
• Complementary to BTNA45N3
• Pb-free lead plating and halogen-free package
Symbol
Outline
SOT-23
BTP9050N3
C
E
B
B：Base C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
-500
-500
-7
-150
-500
-200
300 (Note)
-55~+150
Unit
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
ICM
IBM
V
V
V
mA
mA
mA
mW
°C
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Peak Collector Current , single pulse, pulse width tp<1ms
Peak Base Current, single pulse, pulse width tp<1ms
Power Dissipation
PD
Tj ; Tstg
Operating Junction and Storage Temperature Range
Note : Device mounted on a FR-4 PCB, single sided copper, tin plated and standard footprint.
BTP9050N3
CYStek Product Specification
Spec. No. : C619N3
Issued Date : 2012.08.21
Revised Date :
CYStech Electronics Corp.
Page No. : 2/7
Thermal Characteristics
Parameter
Symbol
Rth,j-a
Limit
Unit
Thermal Resistance, Junction-to-Ambient, in free air (Note)
Thermal Resistance, Junction-to-Solder point
417
70
°C/W
Rth,j-sp
Note : Device mounted on a FR-4 PCB, single sided copper, tin plated and standard footprint.
Characteristics
(Ta=25°C)
Symbol
BVCBO
Min.
-500
-500
-7
-
-
-
-
-
-
100
80
50
-
-
-
Typ.
Max.
Unit
Test Conditions
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
nA
V
V
V
-
-
IC=-100μA
IC=-1mA
IE=-50μA
VCB=-480V
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
fT
-100
-100
-100
-0.2
-0.2
-0.9
300
300
-
VCE=-480V, VBE=0V
VEB=-7V
-0.11
-0.11
-0.79
-
-
-
50
12
85
IC=-20mA, IB=-2mA
IC=-50mA, IB=-10mA
IC=-50mA, IB=-10mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
VCE=-10V, IC=-10mA, f=10MHz
VCB=-10V, IE=0A, f=1MHz
VEB=-0.5V, IC=0A, f=1MHz
-
-
-
-
MHz
pF
pF
Cob
Cib
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
BTP9050N3-0-T1-G
3000 pcs / Tape & Reel
BTP9050N3
CYStek Product Specification
Spec. No. : C619N3
Issued Date : 2012.08.21
Revised Date :
CYStech Electronics Corp.
Page No. : 3/7
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
5mA
1mA
2.5mA
500uA
400uA
1mA
300uA
200uA
-I =500uA
B
-I =100uA
B
0
1
2
3
4
5
6
0
1
2
3
4
5
6
-VCE , Collector-to-Emitter Voltage(V)
-VCE , Collector-to-Emitter Voltage(V)
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.2
0.18
0.16
0.14
0.12
0.1
0.3
0.25
0.2
50mA
20mA
10mA
6mA
4mA
25mA
15mA
10mA
0.15
0.1
0.08
0.06
0.04
0.02
0
-I =2mA
B
-I =5mA
B
0.05
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
-VCE , Collector-to-Emitter Voltage(V)
-VCE , Collector-to-Emitter Voltage(V)
Current Gain vs Collector Current
Current Gain vs Collector Current
1000
100
10
1000
100
10
125°C
125°C
75°C
25°C
75°C
25°C
-V =5V
CE
-V =10V
CE
1
1
1
10
100
1000
1
10
100
1000
-IC, Collector Current(mA)
-IC, Collector Current(mA)
BTP9050N3
CYStek Product Specification
Spec. No. : C619N3
Issued Date : 2012.08.21
Revised Date :
CYStech Electronics Corp.
Page No. : 4/7
Typical Characteristics
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
1000
100
10000
V @I =10I
CESAT C B
V
CESAT
@I =20I
C B
125°C
1000
75°C
25°C
125°C
75°C
25°C
100
10
1
10
-IC, Collector Current(mA)
100
1
10
-IC, Collector Current(mA)
100
On Voltage vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
25°C
75°C
25°C
75°C
125°C
125°C
V @V =-10V
BEON CE
V @I =10I
BESAT C B
100
100
0.1
1
10
100
1000
1
10
100
1000
-IC, Collector Current(mA)
-IC, Collector Current(mA)
Power Derating Curve
Capacitance vs Reverse-biased Voltage
350
300
250
200
150
100
50
1000
100
10
Device mounted on FR-4
board of minimum pad size
Cib
Cob
0
1
0
50
100
150
200
0.1
1
10
100
TA, Ambient Temperature(℃)
VR, Reverse-biased Voltage(V)
BTP9050N3
CYStek Product Specification
Spec. No. : C619N3
Issued Date : 2012.08.21
Revised Date :
CYStech Electronics Corp.
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
BTP9050N3
CYStek Product Specification
Spec. No. : C619N3
Issued Date : 2012.08.21
Revised Date :
CYStech Electronics Corp.
Page No. : 6/7
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
100°C
150°C
150°C
200°C
60-120 seconds
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTP9050N3
CYStek Product Specification
Spec. No. : C619N3
Issued Date : 2012.08.21
Revised Date :
CYStech Electronics Corp.
Page No. : 7/7
SOT-23 Dimension
Marking:
A
L
Product Code
3
LL
S
B
Date Code: Year+Month
Year: 7→2007, 8→2008
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
1
2
V
G
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
Style : Pin 1.Base 2.Emitter 3.Collector
D
K
H
J
*:Typical
Inches
Millimeters
Inches
Min. Max.
Millimeters
DIM
DIM
Min.
Max.
Min.
Max.
3.04
1.60
1.30
0.50
2.30
0.10
Min.
Max.
0.18
0.67
1.15
2.95
0.65
A
B
C
D
G
H
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
2.80
1.20
0.89
0.30
1.70
0.013
J
K
L
S
V
0.0031 0.0071
0.0128 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.08
0.32
0.85
2.10
0.25
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTP9050N3
CYStek Product Specification
相关型号：
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