BTP955J3 [CYSTEKEC]
PNP Epitaxial Planar High Current (High Performance) Transistor; PNP外延平面大电流(高性能)晶体管型号: | BTP955J3 |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | PNP Epitaxial Planar High Current (High Performance) Transistor |
文件: | 总5页 (文件大小:180K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C607J3-A
Issued Date : 2006.06.07
Revised Date :
CYStech Electronics Corp.
Page No. : 1/5
PNP Epitaxial Planar High Current (High Performance) Transistor
BTP955J3
Features
• 4 Amps continuous current, up to 10 Amps peak current
• Very low saturation voltage
• Excellent gain characteristics specified up to 3 Amps
• Ptot=3Watts
Ω
• Extremely low equivalent on resistance, RCE(SAT)=90m at 3A
• Pb-free package
Symbol
Outline
TO-252
BTP955J3
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
IC
-120
-100
V
-6
-4
V
Continuous Collector Current
Peak Collector Current
Base Current
A
ICP
-10 (Note 1)
-1 (Note 2)
1.75
A
IB
A
W
W
°C
@TA=25°C
Power Dissipation
Pd
20
@TC=25°C
Operating and Storage Temperature Range
Tj ; Tstg
-55 ~ +150
≦
≦
Note : 1. Single Pulse , Pw 380µs,Duty 2%.
2. When mounted on a PCB with the minimum pad size.
BTP955J3
preliminary
CYStek Product Specification
Spec. No. : C607J3-A
Issued Date : 2006.06.07
Revised Date :
CYStech Electronics Corp.
Page No. : 2/5
Characteristics
(Ta=25°C, unless otherwise specified)
Symbol
BVCBO
Min.
Typ.
Max.
Unit
Test Conditions
-120
-
-
V
IC=-100µA
Ω
BVCER
*BVCEO
BVEBO
ICBO
-100
-
-
V
IC=-1µA, RBE 1k
≤
-100
-
-
V
IC=-10mA
IE=-100µA
VCB=-100V
-6
-
-
V
-
-
-50
-50
-10
-60
-120
-150
-370
-1110
-950
-
nA
nA
nA
mV
mV
mV
mV
mV
mV
-
Ω
ICER
-
-
VCE=-100V, RBE 1k
≤
IEBO
-
-
VEB=-6V
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VCE(sat)
1
-
-40
-70
-110
-270
-930
-830
200
200
140
10
IC=-100mA, IB=-5mA
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-3A, IB=-300mA
IC=-3A, IB=-300mA
VCE=-5V, IC=-3A
2
3
4
-
-
-
*VBE(sat)
*VBE(on)
hFE1
-
-
100
100
75
-
VCE=-5V, IC=-10mA
VCE=-5V, IC=-1A
hFE2
300
-
-
*hFE3
*hFE4
fT
-
VCE=-5V, IC=-3A
-
-
VCE=-5V, IC=-10A
-
-
110
40
-
MHz
pF
ns
VCE=-10V, IC=-100mA, f=50MHz
VCB=-20V, f=1MHz
IC=-1A, IB1=-100mA, IB2=100mA,
VCC=-50V
Cob
-
ton
68
toff
1030
ns
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Ordering Information
Device
Package
TO-252
(Pb-free)
Shipping
2500 pcs / Tape & Reel
Marking
P955
BTP955J3
BTP955J3
preliminary
CYStek Product Specification
Spec. No. : C607J3-A
Issued Date : 2006.06.07
Revised Date :
CYStech Electronics Corp.
Page No. : 3/5
Characteristic Curves
CurrentꢀGainꢀvsꢀCollectorꢀCurrent
SaturationꢀVoltageꢀvsꢀCollectorꢀCurrent
1000
10000
1000
100
VCE(SAT)
IC=20IB
IC=50IB
100
VCE=5V
VCE=1V
IC=10IB
10
10
1
10
100
1000
10000
1
10
100
1000
10000
CollectorꢀCurrent---IC(mA)
CollectorꢀCurrent---IC(mA)
SaturationꢀVoltageꢀvsꢀCollectorꢀCurrent
OnꢀVottageꢀvsꢀCollectorꢀCurrent
10000
10000
1000
100
VBE(ON)@VCE=5V
VBE(SAT)ꢀ@ꢀIC=10IB
1000
100
1
10
100
1000
10000
1
10
100
1000
10000
CollectorꢀCurrent---IC(mA)
CollectorꢀCurrent---IC(mA)
PowerꢀDeratingꢀCurve
PowerꢀDeratingꢀCurve
2
1.8
1.6
1.4
1.2
1
25
20
15
10
5
0.8
0.6
0.4
0.2
0
0
0
50
100
150
200
0
50
100
150
200
AmbientꢀTemperature---TA(℃)
CaseꢀTemperature---TC(℃)
BTP955J3
preliminary
CYStek Product Specification
Spec. No. : C607J3-A
Issued Date : 2006.06.07
Revised Date :
CYStech Electronics Corp.
Page No. : 4/5
Reel Dimension
Carrier Tape Dimension
BTP955J3
preliminary
CYStek Product Specification
Spec. No. : C607J3-A
Issued Date : 2006.06.07
Revised Date :
CYStech Electronics Corp.
Page No. : 5/5
TO-252 Dimension
A
C
Marking:
D
B
P955
L
F
G
3
2
H
Style: Pin 1.Base 2.Collector 3.Emitter
E
K
I
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
1
J
*: Typical
Millimeters
Inches
Millimeters
Inches
Min. Max.
DIM
DIM
Min.
Max.
Min.
Max.
0.55
1.95
1.50
0.60
6.80
5.80
Min.
Max.
2.80
*2.30
0.90
0.80
5.50
1.60
A
B
C
D
E
F
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2520 0.2677
0.2125 0.2283
0.45
1.65
0.90
0.45
6.40
5.40
G
H
I
0.0866 0.1102
2.20
-
-
-
*0.0906
0.0354
0.0315
-
-
J
-
K
L
0.2047 0.2165
0.0551 0.0630
5.20
1.40
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTP955J3
preliminary
CYStek Product Specification
相关型号:
BTR-3420-SPG
1310 nm TX / 1550 nm RX , 5V / 155 Mbps RoHS Compliant Single-Fiber Transceiver
OPTOWAY
©2020 ICPDF网 联系我们和版权申明