BTP955J3 [CYSTEKEC]

PNP Epitaxial Planar High Current (High Performance) Transistor; PNP外延平面大电流(高性能)晶体管
BTP955J3
型号: BTP955J3
厂家: CYSTECH ELECTONICS CORP.    CYSTECH ELECTONICS CORP.
描述:

PNP Epitaxial Planar High Current (High Performance) Transistor
PNP外延平面大电流(高性能)晶体管

晶体 晶体管
文件: 总5页 (文件大小:180K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Spec. No. : C607J3-A  
Issued Date : 2006.06.07  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/5  
PNP Epitaxial Planar High Current (High Performance) Transistor  
BTP955J3  
Features  
4 Amps continuous current, up to 10 Amps peak current  
Very low saturation voltage  
Excellent gain characteristics specified up to 3 Amps  
Ptot=3Watts  
Ω
Extremely low equivalent on resistance, RCE(SAT)=90m at 3A  
Pb-free package  
Symbol  
Outline  
TO-252  
BTP955J3  
BBase  
CCollector  
EEmitter  
B C E  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
Limits  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
-120  
-100  
V
-6  
-4  
V
Continuous Collector Current  
Peak Collector Current  
Base Current  
A
ICP  
-10 (Note 1)  
-1 (Note 2)  
1.75  
A
IB  
A
W
W
°C  
@TA=25°C  
Power Dissipation  
Pd  
20  
@TC=25°C  
Operating and Storage Temperature Range  
Tj ; Tstg  
-55 ~ +150  
Note : 1. Single Pulse , Pw 380µs,Duty 2%.  
2. When mounted on a PCB with the minimum pad size.  
BTP955J3  
preliminary  
CYStek Product Specification  
Spec. No. : C607J3-A  
Issued Date : 2006.06.07  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/5  
Characteristics  
(Ta=25°C, unless otherwise specified)  
Symbol  
BVCBO  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
-120  
-
-
V
IC=-100µA  
Ω
BVCER  
*BVCEO  
BVEBO  
ICBO  
-100  
-
-
V
IC=-1µA, RBE 1k  
-100  
-
-
V
IC=-10mA  
IE=-100µA  
VCB=-100V  
-6  
-
-
V
-
-
-50  
-50  
-10  
-60  
-120  
-150  
-370  
-1110  
-950  
-
nA  
nA  
nA  
mV  
mV  
mV  
mV  
mV  
mV  
-
Ω
ICER  
-
-
VCE=-100V, RBE 1k  
IEBO  
-
-
VEB=-6V  
*VCE(sat)  
*VCE(sat)  
*VCE(sat)  
*VCE(sat)  
1
-
-40  
-70  
-110  
-270  
-930  
-830  
200  
200  
140  
10  
IC=-100mA, IB=-5mA  
IC=-500mA, IB=-50mA  
IC=-1A, IB=-100mA  
IC=-3A, IB=-300mA  
IC=-3A, IB=-300mA  
VCE=-5V, IC=-3A  
2
3
4
-
-
-
*VBE(sat)  
*VBE(on)  
hFE1  
-
-
100  
100  
75  
-
VCE=-5V, IC=-10mA  
VCE=-5V, IC=-1A  
hFE2  
300  
-
-
*hFE3  
*hFE4  
fT  
-
VCE=-5V, IC=-3A  
-
-
VCE=-5V, IC=-10A  
-
-
110  
40  
-
MHz  
pF  
ns  
VCE=-10V, IC=-100mA, f=50MHz  
VCB=-20V, f=1MHz  
IC=-1A, IB1=-100mA, IB2=100mA,  
VCC=-50V  
Cob  
-
ton  
68  
toff  
1030  
ns  
*Pulse Test: Pulse Width 380µs, Duty Cycle2%  
Ordering Information  
Device  
Package  
TO-252  
(Pb-free)  
Shipping  
2500 pcs / Tape & Reel  
Marking  
P955  
BTP955J3  
BTP955J3  
preliminary  
CYStek Product Specification  
Spec. No. : C607J3-A  
Issued Date : 2006.06.07  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 3/5  
Characteristic Curves  
CurrentꢀGainꢀvsꢀCollectorꢀCurrent  
SaturationꢀVoltageꢀvsꢀCollectorꢀCurrent  
1000  
10000  
1000  
100  
VCE(SAT)  
IC=20IB  
IC=50IB  
100  
VCE=5V  
VCE=1V  
IC=10IB  
10  
10  
1
10  
100  
1000  
10000  
1
10  
100  
1000  
10000  
CollectorꢀCurrent---IC(mA)  
CollectorꢀCurrent---IC(mA)  
SaturationꢀVoltageꢀvsꢀCollectorꢀCurrent  
OnꢀVottageꢀvsꢀCollectorꢀCurrent  
10000  
10000  
1000  
100  
VBE(ON)@VCE=5V  
VBE(SAT)ꢀ@ꢀIC=10IB  
1000  
100  
1
10  
100  
1000  
10000  
1
10  
100  
1000  
10000  
CollectorꢀCurrent---IC(mA)  
CollectorꢀCurrent---IC(mA)  
PowerꢀDeratingꢀCurve  
PowerꢀDeratingꢀCurve  
2
1.8  
1.6  
1.4  
1.2  
1
25  
20  
15  
10  
5
0.8  
0.6  
0.4  
0.2  
0
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
AmbientꢀTemperature---TA(℃)  
CaseꢀTemperature---TC(℃)  
BTP955J3  
preliminary  
CYStek Product Specification  
Spec. No. : C607J3-A  
Issued Date : 2006.06.07  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 4/5  
Reel Dimension  
Carrier Tape Dimension  
BTP955J3  
preliminary  
CYStek Product Specification  
Spec. No. : C607J3-A  
Issued Date : 2006.06.07  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 5/5  
TO-252 Dimension  
A
C
Marking:  
D
B
P955  
L
F
G
3
2
H
Style: Pin 1.Base 2.Collector 3.Emitter  
E
K
I
3-Lead TO-252 Plastic Surface Mount Package  
CYStek Package Code: J3  
1
J
*: Typical  
Millimeters  
Inches  
Millimeters  
Inches  
Min. Max.  
DIM  
DIM  
Min.  
Max.  
Min.  
Max.  
0.55  
1.95  
1.50  
0.60  
6.80  
5.80  
Min.  
Max.  
2.80  
*2.30  
0.90  
0.80  
5.50  
1.60  
A
B
C
D
E
F
0.0177 0.0217  
0.0650 0.0768  
0.0354 0.0591  
0.0177 0.0236  
0.2520 0.2677  
0.2125 0.2283  
0.45  
1.65  
0.90  
0.45  
6.40  
5.40  
G
H
I
0.0866 0.1102  
2.20  
-
-
-
*0.0906  
0.0354  
0.0315  
-
-
J
-
K
L
0.2047 0.2165  
0.0551 0.0630  
5.20  
1.40  
Notes: 1.Controlling dimension: millimeters.  
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.  
Material:  
Lead: 42 Alloy; solder plating  
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  
CYStek reserves the right to make changes to its products without notice.  
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
BTP955J3  
preliminary  
CYStek Product Specification  

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