BTP953L3 [CYSTEKEC]

PNP Epitaxial Planar High Current (High Performance) Transistor; PNP外延平面大电流(高性能)晶体管
BTP953L3
型号: BTP953L3
厂家: CYSTECH ELECTONICS CORP.    CYSTECH ELECTONICS CORP.
描述:

PNP Epitaxial Planar High Current (High Performance) Transistor
PNP外延平面大电流(高性能)晶体管

晶体 晶体管
文件: 总6页 (文件大小:204K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Spec. No. : C657L3  
Issued Date : 2005.01.07  
Revised Date : 2005.03.04  
Page No. : 1/6  
CYStech Electronics Corp.  
PNP Epitaxial Planar High Current (High Performance) Transistor  
BTP953L3  
Features  
5 Amps continuous current, up to 10 Amps peak current  
Very low saturation voltage  
Excellent gain characteristics specified up to 10 Amps  
Ptot=3Watts  
Ω
Extremely low equivalent on resistance, RCE(SAT)=70m at 4A  
Pb-free package  
Symbol  
Outline  
BTP953L3  
SOT-223  
C
E
C
BBase  
CCollector  
EEmitter  
B
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
-140  
-100  
-6  
Unit  
V
Collector-Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Continuous Collector Current  
Peak Collector Current  
-5  
A
ICP  
-10  
-1  
3
A
Base Current  
IB  
A
Pd  
(Note)  
W
°C  
Power Dissipation @TA=25°C  
Operating and Storage Temperature Range  
Tj ; Tstg  
-55 ~ +150  
Note: The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal  
to 4 square inch minimum.  
BTP953L3  
CYStek Product Specification  
Spec. No. : C657L3  
Issued Date : 2005.01.07  
Revised Date : 2005.03.04  
Page No. : 2/6  
CYStech Electronics Corp.  
Characteristics  
(Ta=25°C, unless otherwise specified)  
Symbol  
BVCBO  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
-140  
-170  
-170  
-120  
-8  
-
V
IC=-100µA  
Ω
BVCER  
BVCEO  
BVEBO  
ICBO  
-140  
-
V
IC=-1µA, RBE 1k  
-100  
-
V
IC=-10mA  
IE=-100µA  
VCB=-100V  
-6  
-
V
-
-
-50  
-50  
-10  
-50  
-115  
-220  
-420  
-1170  
-1160  
-
nA  
nA  
nA  
mV  
mV  
mV  
mV  
mV  
mV  
-
Ω
ICER  
-
-
VCE=-100V, RBE 1k  
IEBO  
-
-
VEB=-5V  
*VCE(sat)  
*VCE(sat)  
*VCE(sat)  
*VCE(sat)  
1
2
3
4
-
-18  
-85  
-155  
-280  
-990  
-910  
200  
200  
90  
IC=-100mA, IB=-10mA  
IC=-1A, IB=-100mA  
IC=-2A, IB=-200mA  
IC=-4A, IB=-400mA  
IC=-4A, IB=-400mA  
VCE=-1V, IC=-4A  
-
-
-
*VBE(sat)  
*VBE(on)  
hFE1  
-
-
100  
100  
50  
30  
-
VCE=-1V, IC=-10mA  
VCE=-1V, IC=-1A  
hFE2  
300  
320  
-
-
*hFE3  
*hFE4  
*hFE5  
fT  
-
VCE=-1V, IC=-3A  
50  
-
VCE=-1V, IC=-4A  
15  
-
-
VCE=-1V, IC=-10A  
-
-
125  
65  
-
MHz  
pF  
ns  
VCE=-10V, IC=-100mA, f=50MHz  
VCB=-10V, f=1MHz  
IC=-2A, IB1=-200mA, IB2=200mA,  
VCC=-10V  
Cob  
-
ton  
110  
460  
toff  
ns  
*Pulse Test: Pulse Width 380µs, Duty Cycle2%  
Ordering Information  
Device  
Package  
SOT-223  
(Pb-free)  
Shipping  
1000 pcs / Tape & Reel  
Marking  
953  
BTP953L3  
BTP953L3  
CYStek Product Specification  
Spec. No. : C657L3  
Issued Date : 2005.01.07  
Revised Date : 2005.03.04  
Page No. : 3/6  
CYStech Electronics Corp.  
Characteristic Curves  
CurrentꢀGainꢀvsꢀCollectorꢀCurrent  
SaturationꢀVoltageꢀvsꢀCollectorꢀCurrent  
1000  
10000  
1000  
100  
10  
VCE(SAT)  
IC=50IB  
100  
VCE=2V  
VCE=1V  
IC=10IB  
IC=20IB  
1
10  
1
10  
100  
1000  
10000  
1
10  
100  
1000  
10000  
CollectorꢀCurrent---IC(mA)  
CollectorꢀCurrent---IC(mA)  
SaturationꢀVoltageꢀvsꢀCollectorꢀCurrent  
OnꢀVottageꢀvsꢀCollectorꢀCurrent  
10000  
10000  
1000  
100  
VBE(ON)@VCE=1V  
VBE(SAT)ꢀ@ꢀIC=10IB  
1000  
100  
1
10  
100  
1000  
10000  
1
10  
100  
1000  
10000  
CollectorꢀCurrent---IC(mA)  
CollectorꢀCurrent---IC(mA)  
PowerꢀDeratingꢀCurve  
3.5  
3
2.5  
2
1.5  
1
0.5  
0
0
50  
100  
150  
200  
AmbientꢀTemperature---TA(℃)  
BTP953L3  
CYStek Product Specification  
Spec. No. : C657L3  
Issued Date : 2005.01.07  
Revised Date : 2005.03.04  
Page No. : 4/6  
CYStech Electronics Corp.  
Reel Dimension  
BTP953L3  
CYStek Product Specification  
Spec. No. : C657L3  
Issued Date : 2005.01.07  
Revised Date : 2005.03.04  
Page No. : 5/6  
CYStech Electronics Corp.  
Carrier Tape Dimension  
BTP953L3  
CYStek Product Specification  
Spec. No. : C657L3  
Issued Date : 2005.01.07  
Revised Date : 2005.03.04  
Page No. : 6/6  
CYStech Electronics Corp.  
SOT-223 Dimension  
A
Marking:  
953  
B
C
3
1
2
F
D
E
Style: Pin 1.Base 2.Collector 3.Emitter  
a1  
H
I
G
3-Lead SOT-223 Plastic  
Surface Mounted Package  
CYStek Package Code: L3  
a2  
*: Typical  
Millimeters  
Inches  
Millimeters  
Inches  
Min.  
DIM  
DIM  
Min.  
Max.  
0.1220  
0.2874  
0.1457  
0.0315  
-
Min.  
Max.  
3.10  
7.30  
3.70  
0.80  
-
Max.  
0.0709  
0.0138  
0.0039  
-
Min.  
1.40  
0.25  
0.02  
*13o  
0 o  
Max.  
1.80  
0.35  
0.10  
-
A
B
C
D
E
F
0.1142  
0.2638  
0.1299  
0.0236  
*0.0906  
0.2480  
2.90  
6.70  
3.30  
0.60  
*2.30  
6.30  
G
H
0.0551  
0.0098  
0.0008  
*13o  
I
a1  
a2  
0 o  
10 o  
10 o  
0.2638  
6.70  
Notes: 1.Controlling dimension: millimeters.  
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.  
Material:  
Lead: 42 Alloy; solder plating  
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  
CYStek reserves the right to make changes to its products without notice.  
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
BTP953L3  
CYStek Product Specification  

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