BTP6520N3 [CYSTEKEC]

High Voltage PNP Epitaxial Planar Transistor; 高电压PNP外延平面晶体管
BTP6520N3
型号: BTP6520N3
厂家: CYSTECH ELECTONICS CORP.    CYSTECH ELECTONICS CORP.
描述:

High Voltage PNP Epitaxial Planar Transistor
高电压PNP外延平面晶体管

晶体 晶体管
文件: 总4页 (文件大小:147K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Spec. No. : C321N3  
Issued Date : 2003.04.12  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/4  
High Voltage PNP Epitaxial Planar Transistor  
BTP6520N3  
Features  
High Breakdown Voltage:BVCEO-350V  
Complementary to BTN6517N3  
Symbol  
BTP6520N3  
SOT-23  
BBase  
CCollector  
EEmitter  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
Collector-Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
-350  
-350  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
-5  
V
Collector Current---continuous  
Power Dissipation @TA=25℃  
Junction Temperature  
Storage Temperature  
-500  
mA  
mW  
°C  
°C  
Pd  
225  
Tj  
Tstg  
150  
-55~+150  
BTP6520N3  
CYStek Product Specification  
Spec. No. : C321N3  
Issued Date : 2003.04.12  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/4  
Characteristics  
(Ta=25°C)  
Symbol  
BVCBO  
Min. Typ.  
Max.  
Unit  
Test Conditions  
IC=-100 A  
μ
-350  
-350  
-5  
-
-
-
-
-
V
V
V
BVCEO  
BVEBO  
ICBO  
-
IC=-1mA  
μ
IE=-10 A  
-
n
A
A
-
-50  
VCB=-250V  
VEB=-4V  
n
IEBO  
VCE(sat) 1  
VCE(sat) 2  
*VCE(sat) 3  
*VCE(sat) 4  
VBE(sat) 1  
VBE(sat) 2  
*VBE(sat) 3  
VBE(on)  
hFE 1  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-50  
-0.3  
-0.35  
-0.5  
-1.0  
-0.75  
-0.85  
-0.9  
-2  
V
V
V
V
V
V
V
V
-
IC=-10mA, IB=-1mA  
IC=-20mA, IB=-2mA  
IC=-30mA, IB=-3mA  
IC=-50mA, IB=-5mA  
IC=-10mA, IB=-1mA  
IC=-20mA, IB=-2mA  
IC=-30mA, IB=-3mA  
VCE=-10V, IC=-100mA  
VCE=-10V, IC=-1mA  
VCE=-10V,IC=-10mA  
VCE=-10V,IC=-30mA  
VCE=-10V,IC=-50mA  
VCE=-10V,IC=-100mA  
VCE=-20V, IC=-10mA, f=20MHz  
VCB=-20V, IE=0A,f=1MHz  
-
-
-
-
-
-
-
20  
30  
30  
20  
15  
40  
-
-
hFE 2  
-
-
*hFE 3  
200  
200  
-
-
*hFE 4  
-
*hFE 5  
-
fT  
200  
6
MHz  
pF  
Cob  
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
BTP6520N3  
CYStek Product Specification  
Spec. No. : C321N3  
Issued Date : 2003.04.12  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 3/4  
Characteristic Curves  
Current Gain vs Collector Current  
Saturation Voltage vs Collector Current  
1000  
100  
10  
100000  
10000  
1000  
100  
VCE=10V  
VCE(SAT)@IC=10IB  
1
10  
0.1  
1
10  
100  
1000  
1
10  
100  
1000  
Collector Current---IC(mA)  
Collector Current---IC(mA)  
Saturation Voltage vs Collector Current  
On voltage vs Collector Current  
1000  
1000  
VBE(SAT)@IC=10IB  
VBE(on)@VCE=10V  
100  
100  
1
10  
100  
1000  
0.1  
1
10  
100  
1000  
Collector Current---IC(mA)  
Collector Collector---IC(mA)  
Power Derating Curve  
250  
200  
150  
100  
50  
0
0
50  
100  
150  
200  
Ambient Temperature --- Ta(℃ )  
BTP6520N3  
CYStek Product Specification  
Spec. No. : C321N3  
Issued Date : 2003.04.12  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 4/4  
SOT-23 Dimension  
Marking:  
A
L
3
2Z  
S
B
1
2
3-Lead SOT-23 Plastic  
Surface Mounted Package  
CYStek Package Code: N3  
V
G
Style: Pin 1.Base 2.Emitter 3.Collector  
C
D
K
H
J
*: Typical  
Inches  
Millimeters  
Inches  
Min. Max.  
Millimeters  
DIM  
DIM  
Min.  
Max.  
Min.  
Max.  
3.04  
1.60  
1.30  
0.50  
2.30  
0.10  
Min.  
Max.  
0.177  
0.67  
1.15  
2.75  
0.65  
A
B
C
D
G
H
0.1102 0.1204  
0.0472 0.0630  
0.0335 0.0512  
0.0118 0.0197  
0.0669 0.0910  
0.0005 0.0040  
2.80  
1.20  
0.89  
0.30  
1.70  
0.013  
J
K
L
0.0034 0.0070  
0.0128 0.0266  
0.0335 0.0453  
0.0830 0.1083  
0.0098 0.0256  
0.085  
0.32  
0.85  
2.10  
0.25  
S
V
Notes: 1.Controlling dimension: millimeters.  
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.  
Material:  
Lead: 42 Alloy ; solder plating  
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  
CYStek reserves the right to make changes to its products without notice.  
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
BTP6520N3  
CYStek Product Specification  

相关型号:

BTP8550A3

General Purpose PNP Epitaxial Planar Transistor
CYSTEKEC

BTP8550BA3

General Purpose PNP Epitaxial Planar Transistor
CYSTEKEC

BTP8550N3

Low VCESAT PNP Epitaxial Planar Transistor
CYSTEKEC

BTP8550SA3

General Purpose PNP Epitaxial Planar Transistor
CYSTEKEC

BTP9050N3

High Voltage PNP Epitaxial Planar Transistor
CYSTEKEC

BTP9050N3-0-T1-G

High Voltage PNP Epitaxial Planar Transistor
CYSTEKEC

BTP9170KP

PCM Transceiver
ETC

BTP9170KPJ

PCM Transceiver
ETC

BTP953L3

PNP Epitaxial Planar High Current (High Performance) Transistor
CYSTEKEC

BTP955J3

PNP Epitaxial Planar High Current (High Performance) Transistor
CYSTEKEC

BTP955L3

PNP Epitaxial Planar High Current (High Performance) Transistor
CYSTEKEC

BTPA56N3

PNP Epitaxial Planar Transistor
CYSTEKEC