CP324 [CENTRAL]
Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip; 小信号MOSFET晶体管N-沟道增强型晶体管芯片
| 型号： | CP324 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip |
| 文件： | 总2页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
PROCESS CP324
Central
Small Signal MOSFET Transistor
N-Channel Enhancement-Mode Transistor Chip
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
EPITAXIAL PLANAR
21.65 x 21.65 MILS
Die Thickness
9.0 MILS
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
5.5 x 5.5 MILS
5.9 x 13.8 MILS
Al - 30,000Å
Au - 12,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
35,900
PRINCIPAL DEVICE TYPES
2N7002
BACKSIDE DRAIN
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R1 (1-August 2002)
TM
PROCESS CP324
Central
Semiconductor Corp.
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R1 (1-August 2002)
www.centralsemi.com
相关型号：
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