CP329V [CENTRAL]
Small Signal Transistor NPN- Silicon Darlington Transistor Chip; 小信号晶体管NPN-硅达林顿晶体管芯片![CP329V](http://pdffile.icpdf.com/pdf1/p00112/img/icpdf/CP329V_610200_icpdf.jpg)
型号: | CP329V |
厂家: | ![]() |
描述: | Small Signal Transistor NPN- Silicon Darlington Transistor Chip |
文件: | 总1页 (文件大小:43K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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PROCESS CP329V
Small Signal Transistor
NPN- Silicon Darlington Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
27 x 27 MILS
7.1 MILS
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
4.2 x 4.2 MILS
4.3 x 4.3 MILS
Al
- 30,000Å
Au - 13,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
15,980
PRINCIPAL DEVICE TYPES
CMPTA29
CZTA29
MPSA29
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R0 (20 -January 2006)
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