CP3313 [ONSEMI]

TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,1.2A I(D),SOT-346;


型号：	CP3313
厂家：	ONSEMI
描述：	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,1.2A I(D),SOT-346
文件：	总4页 (文件大小：40K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Ordering number : ENN8114

CP3313

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

CP3313

Features

•

Low ON-resistance.

•

Ultrahigh-speed switching.

•

2.5V drive.

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

--20

±10

--1.2

--4.8

0.5

DSS

GSS

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (900mm²✕0.8mm)

°C

Tch

150

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

--20

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=--1mA, V =0

µA

(BR)DSS

D GS

=--20V, V =0

--1

DSS

GSS

=±8V, V =0

±10

V (off)

=--10V, I =--1mA

--0.4

1.2

--1.3

Forward Transfer Admittance

yfs

=--10V, I =--0.6A

(on)1

=--0.6A, V =--4V

220

280

290

285

390

mΩ

Static Drain-to-Source On-State Resistance

(on)2

=--0.4A, V =--2.5V

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Ciss

=--10V, f=1MHz

Coss

Crss

t (on)

See specified Test Circuit.

Turn-OFF Delay Time

Fall Time

t (off)

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Marking : JA

=--10V, V =--4V, I =--1.2A

3.2

0.8

0.6

--0.9

Qgs

Qgd

=--10V, V =--4V, I =--1.2A

I =--1.2A, V =0

S GS

--1.5

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

D2404PE TS IM TB-00000317 No.8114-1/4

CP3313

Package Dimensions

unit : mm

Switching Time Test Circuit

2091A

= --10V

--4V

0.4

0.16

= --0.6A

R =16.7Ω

0 to 0.1

OUT

PW=10µs

D.C.≤1%

0.95

1.9

2.9

1 : Gate

2 : Source

3 : Drain

CP3313

P.G

50Ω

SANYO : CP

-- V

D GS

--2.0

--1.8

--1.6

--1.4

--2.0

--1.8

--1.6

--1.4

= --10V

--1.2

--1.0

--0.8

--0.6

--0.4

--1.2

--1.0

--0.8

--0.6

--0.4

--0.2

--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0

--0.5

--1.0

--1.5

--2.0

--2.5

IT02655

Drain-to-Source Voltage, V

-- V

Gate-to-Source Voltage, V -- V

IT02654

(on) -- V

R (on) -- Ta

600

500

400

300

200

500

400

300

200

Ta=25°C

--0.6A

I = --0.4A

100

--1

--2

--3

--4

--5

--6

--7

--8

--9

--10

--60 --40 --20

80 100 120 140 160

Gate-to-Source Voltage, V

-- V

Ambient Temperature, Ta -- °C

IT08254

IT08255

No.8114-2/4

CP3313

fs -- I

-- V

F SD

--10

V =0

V = --10V

--1.0

1.0

--0.1

--0.01

0.1

--0.01

--0.2

--0.4

--0.6

--0.8

--1.0

--1.2

--1.4

--0.1

--1.0

Drain Current, I -- A

IT02658

Diode Forward Voltage, V

-- V

IT08256

Ciss, Coss, Crss -- V

SW Time -- I

1000

100

f=1MHz

= --10V

= --4V

Ciss

100

t (on)

--5

--10

--15

--20

IT02661

--0.1

--1.0

Drain-to-Source Voltage, V

-- V

IT02660

Drain Current, I -- A

-- Qg

A S O

--4

--10

= --10V

I = --4.8A

<10µs

I = --1.2A

--3

--2

I = --1.2A

--1.0

Operation in

this area is

--0.1

--1

limited by R (on).

Ta=25

Single pulse

Mounted on a ceramic board (900mm²✕0.8mm)

°C

--0.01

0.5

1.0

1.5

2.0

2.5

3.0

3.5

IT08257

--10

--0.1

--1.0

Total Gate Charge, Qg -- nC

Drain-to-Source Voltage, V

-- V

IT08258

-- Ta

0.6

0.5

0.4

0.3

0.2

0.1

100

120

140

160

Amibient Temperature, Ta -- °C

IT08259

No.8114-3/4

CP3313

Note on usage : Since the CP3313 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer’s

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer’s products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of December, 2004. Specifications and information herein are subject

to change without notice.

PS No.8114-4/4

CP3313 [ONSEMI]

相关型号：

CP336FRA

CP336FRA172MAZ

CP336FRA262MAZ

CP336FRA372MAZ

CP336FRA421MAZ

CP336FRA502MAZ

CP336FRA672MAZ

CP336FRA901MAZ

CP336FRA901MFH

CP336FRA901MFZ

CP336FRA902MAZ

CP336FRA902MFH