CP324X-2N7002-WN [CENTRAL]
Transistor;型号: | CP324X-2N7002-WN |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | Transistor |
文件: | 总2页 (文件大小:406K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PROCESS CP324X
Small Signal MOSFET Transistor
N-Channel Enhancement-Mode Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
21.6 x 21.6 MILS
5.9 MILS
Die Size
Die Thickness
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
5.5 x 5.5 MILS
5.9 x 13.8 MILS
Al - 30,000Å
Au - 12,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
33,500
PRINCIPAL DEVICE TYPES
2N7002
GATE
SOURCE
R0
BACKSIDE DRAIN
R0 (30-August 2011)
www.centralsemi.com
PROCESS CP324X
Typical Electrical Characteristics
R0 (30-August 2011)
www.centralsemi.com
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