2N6057LEADFREE [CENTRAL]

Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN;

2N6057LEADFREE


型号：	2N6057LEADFREE
厂家：	CENTRAL SEMICONDUCTOR CORP
描述：	Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN 局域网晶体管
文件：	总2页 (文件大小：489K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2N6050 2N6051 2N6052

2N6057 2N6058 2N6059

PNP

NPN

www.centralsemi.com

COMPLEMENTARY SILICON

DARLINGTON POWER

TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6050, 2N6057

series types are complementary silicon Darlington

power transistors, manufactured by the epitaxial base

process, designed for high gain amplifier and switching

applications.

MARKING: FULL PART NUMBER

TO-3 CASE

2N6050

2N6057

60

2N6051

2N6058

80

80

5.0

12

20

0.2

150

2N6052

2N6059

100

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

UNITS

V

V

V

A

A

A

W

°C

°C/W

C

V

V

V

CBO

CEO

EBO

60

100

I

C

I

CM

I

P

B

D

T , T

-65 to +200

1.17

J

stg



JC

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

C

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

I

I

I

I

V

V

V

V

=Rated V

=Rated V

=½Rated V

=5.0V

, V =1.5V

0.5

mA

CEV

CEV

CEO

EBO

CE

CE

CE

EB

CEO EB

, V =1.5V, T =150°C

CEO EB

5.0

1.0

2.0

mA

mA

mA

V

C

CEO

BV

BV

BV

I =100mA, (2N6050, 2N6057)

60

80

CEO

CEO

C

I =100mA, (2N6051, 2N6058)

V

C

I =100mA, (2N6052, 2N6059)

100

V

CEO

C

V

V

V

V

I =6.0A, I =24mA

2.0

3.0

4.0

2.8

18K

V

CE(SAT)

CE(SAT)

BE(SAT)

BE(ON)

FE

C

B

I =12A, I =120mA

V

C

B

I =12A, I =120mA

V

C

B

V

=3.0V, I =6.0A

V

CE

CE

CE

CE

CE

CB

CB

C

h

h

h

V

V

V

V

V

V

=3.0V, I =6.0A

750

100

300

4.0

C

=3.0V, I =12A

FE

C

=3.0V, I =5.0A, f=1.0kHz

fe

C

f

=3.0V, I =5.0A, f=1.0MHz

MHz

pF

T

C

C

=10V, I =0, f=100kHz (PNP types)

500

300

ob

ob

E

C

=10V, I =0, f=100kHz (NPN types)

pF

E

R1 (18-September 2012)

2N6050 2N6051 2N6052

2N6057 2N6058 2N6059

PNP

NPN

COMPLEMENTARY SILICON

DARLINGTON POWER

TRANSISTORS

TO-3 CASE - MECHANICAL OUTLINE

LEAD CODE:

1) Base

2) Emitter

Case) Collector

MARKING:

FULL PART NUMBER

R1 (18-September 2012)

www.centralsemi.com

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Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

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