2N6058 [COMSET]
POWER COMPLEMENTARY SILICON TRANSISTORS; 电源互补硅晶体管
| 型号： | 2N6058 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | POWER COMPLEMENTARY SILICON TRANSISTORS |
| 文件： | 总5页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
POWER COMPLEMENTARY
SILICON TRANSISTORS
The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP
transistors in monolithic Darlington configuration mounted in Jedec
TO-3 metal case. They are inteded for use in power linear and low
frequency switching applications. The complementary NPN types are
2N6057, 2N6058 and 2N6059 respectively.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
60
80
Collector-Base Voltage
Collector-EmitterVoltage
Collector-EmitterVoltage
IE=0
VCBO
V
100
60
IB=0
VCEO
V
V
80
100
60
VBE=-1.5 V
VCEX
80
100
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
Emitter-Base Voltage
IC=0
VEBO
5.0
V
Page 1 of 5
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
Collector Current
Collector Peak Current
Base Current
12
20
IC
A
A
ICM
0.2
150
IB
mA
Watts
°C
Power Dissipation
@ TC < 25°
PT
200
-65 to +200
Junction
Storage Temperature
TJ Ts
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
Thermal Resistance, Junction to Case
RthJ-C
1.17
°C/W
Page 2 of 5
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
VCE= VCEX =60 V, VBE=-1.5 V
VCE= VCEX =80 V, VBE=-1.5 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
500
-
µA
mA
mA
mA
V
VCE= VCEX =100 V,
VBE=-1.5 V
-
Collector Cutoff Current
ICEX
VCE= VCEX =60 V, VBE=-1.5 V 2N6050
TC=150°C
2N6057
VCE= VCEX =80 V, VBE=-1.5 V 2N6051
-
5
-
TC=150°C
VCE= VCEX =100 V,
VBE=-1.5 V, TC=150°C
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
-
VCE=30 Vdc, IB=0
VCE=40 Vdc, IB=0
VCE=50 Vdc, IB=0
-
Collector Cutoff Current
Emitter Cutoff Current
1.0
2.0
-
-
ICEO
-
VEB=5 V
IEBO
-
-
60
80
100
-
-
-
Collector-Emitter
Sustaining Voltage (*)
IC=0.1 A
VCEO(SUS)
Page 3 of 5
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
IC=6 A, IB=24 mA
-
-
-
-
-
-
-
-
-
2.0
Collector-Emitter saturation
Voltage (*)
V
VCE(SAT)
IC=12 A, IB=120 mA
IC=12 A, IB=120 mA
IC=6 A, VCE=3 V
3.0
Base-Emitter Saturation
Voltage (*)
-
4
V
V
VBE(SAT)
VBE(ON)
fT
Base-Emitter Voltage (*)
Transition Frequency
-
2.8
IC=5 A, VCE=3 V, f=1 MHz
4
MHz
-
18000
-
VCE=3 V, IC=6.0 A
750
100
-
DC Current Gain (*)
hFE
VCE=3.0 V, IC=12 A
! ! ! For PNP types current and voltage values are negative ! ! !
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
Page 4 of 5
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
A
B
C
D
E
G
H
L
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
M
N
P
0,77
0,04
0,16
4,06
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Page 5 of 5
相关型号：
2N6058LEADFREE
Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
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