2N6058 [COMSET]

POWER COMPLEMENTARY SILICON TRANSISTORS; 电源互补硅晶体管
2N6058
型号: 2N6058
厂家: COMSET SEMICONDUCTOR    COMSET SEMICONDUCTOR
描述:

POWER COMPLEMENTARY SILICON TRANSISTORS
电源互补硅晶体管

晶体 晶体管 局域网
文件: 总5页 (文件大小:219K)
中文:  中文翻译
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POWER COMPLEMENTARY  
SILICON TRANSISTORS  
The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP  
transistors in monolithic Darlington configuration mounted in Jedec  
TO-3 metal case. They are inteded for use in power linear and low  
frequency switching applications. The complementary NPN types are  
2N6057, 2N6058 and 2N6059 respectively.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
60  
80  
Collector-Base Voltage  
Collector-EmitterVoltage  
Collector-EmitterVoltage  
IE=0  
VCBO  
V
100  
60  
IB=0  
VCEO  
V
V
80  
100  
60  
VBE=-1.5 V  
VCEX  
80  
100  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
Emitter-Base Voltage  
IC=0  
VEBO  
5.0  
V
Page 1 of 5  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
Collector Current  
Collector Peak Current  
Base Current  
12  
20  
IC  
A
A
ICM  
0.2  
150  
IB  
mA  
Watts  
°C  
Power Dissipation  
@ TC < 25°  
PT  
200  
-65 to +200  
Junction  
Storage Temperature  
TJ Ts  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
Thermal Resistance, Junction to Case  
RthJ-C  
1.17  
°C/W  
Page 2 of 5  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Test Condition(s)  
Symbol  
Ratings  
Min Typ Mx Unit  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
VCE= VCEX =60 V, VBE=-1.5 V  
VCE= VCEX =80 V, VBE=-1.5 V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
500  
-
µA  
mA  
mA  
mA  
V
VCE= VCEX =100 V,  
VBE=-1.5 V  
-
Collector Cutoff Current  
ICEX  
VCE= VCEX =60 V, VBE=-1.5 V 2N6050  
TC=150°C  
2N6057  
VCE= VCEX =80 V, VBE=-1.5 V 2N6051  
-
5
-
TC=150°C  
VCE= VCEX =100 V,  
VBE=-1.5 V, TC=150°C  
2N6058  
2N6052  
2N6059  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
-
VCE=30 Vdc, IB=0  
VCE=40 Vdc, IB=0  
VCE=50 Vdc, IB=0  
-
Collector Cutoff Current  
Emitter Cutoff Current  
1.0  
2.0  
-
-
ICEO  
-
VEB=5 V  
IEBO  
-
-
60  
80  
100  
-
-
-
Collector-Emitter  
Sustaining Voltage (*)  
IC=0.1 A  
VCEO(SUS)  
Page 3 of 5  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
2N6050  
2N6057  
2N6051  
2N6058  
2N6052  
2N6059  
IC=6 A, IB=24 mA  
-
-
-
-
-
-
-
-
-
2.0  
Collector-Emitter saturation  
Voltage (*)  
V
VCE(SAT)  
IC=12 A, IB=120 mA  
IC=12 A, IB=120 mA  
IC=6 A, VCE=3 V  
3.0  
Base-Emitter Saturation  
Voltage (*)  
-
4
V
V
VBE(SAT)  
VBE(ON)  
fT  
Base-Emitter Voltage (*)  
Transition Frequency  
-
2.8  
IC=5 A, VCE=3 V, f=1 MHz  
4
MHz  
-
18000  
-
VCE=3 V, IC=6.0 A  
750  
100  
-
DC Current Gain (*)  
hFE  
VCE=3.0 V, IC=12 A  
! ! ! For PNP types current and voltage values are negative ! ! !  
(*) Pulse Width 300 µs, Duty Cycle 2.0%  
Page 4 of 5  
MECHANICAL DATA CASE TO-3  
DIMENSIONS  
mm  
inches  
1,004  
1,53  
1,18  
0,68  
0,43  
0,46  
0,34  
0,6  
A
B
C
D
E
G
H
L
25,51  
38,93  
30,12  
17,25  
10,89  
11,62  
8,54  
1,55  
19,47  
1
M
N
P
0,77  
0,04  
0,16  
4,06  
Pin 1 :  
Pin 2 :  
Case :  
Base  
Emitter  
Collector  
Page 5 of 5  

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