首页 |元器件品牌

2N6059 [JMNIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2N6059
型号： 2N6059
厂家： QUANZHOU JINMEI ELECTRONIC CO.,LTD.    QUANZHOU JINMEI ELECTRONIC CO.,LTD.
描述：

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 放大器 局域网
文件： 总3页 (文件大小：43K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2N6058/2N6059  
DESCRIPTION  
·With TO-3 package  
·High gain  
·High current  
·High dissipation  
·Complement to type 2N5883/2N5884  
APPLICATIONS  
·They are intended for use in power linear  
and low frequency switching applications  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
3
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
Absolute maximum ratings(Ta=℃)  
SYMBOL  
PARAMETER  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
2N6058  
2N6059  
2N6058  
2N6059  
80  
Collector-base  
VCBO  
V
voltage  
100  
80  
Collector-emitter  
voltage  
VCEO  
Open base  
V
100  
5
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
12  
Collector current-peak  
Base current  
20  
A
0.2  
mA  
W
℃
℃
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25℃  
150  
200  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
1.17  
℃/W  
JMnic  
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2N6058/2N6059  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
2N6058  
2N6059  
80  
V
Collector-emitter  
sustaining voltage  
VCEO(sus)  
IC=0.1A ;IB=0  
100  
V
V
V
V
V
VCEsat-1  
VCEsat-2  
VBEsat  
VBE  
Collector-emitter saturation voltage  
Collector-emitter saturation voltage  
Collector-emitter saturation voltage  
Base-emitter on voltage  
IC=6A IB=24mA  
IC=12A IB=120mA  
IC=12A IB=120mA  
IC=6A ; VCE=3V  
VCE=40V; IB=0  
2
3
4
2.8  
2N6058  
Collector cut-off current  
2N6059  
ICEO  
1
2
mA  
mA  
VCE=50V; IB=0  
IEBO  
hFE-1  
hFE-2  
fT  
Emitter cut-off current  
DC current gain  
VEB=5V; IC=0  
IC=6A ; VCE=3V  
IC=12A ; VCE=3V  
IC=5A ;VCE=3V;f=1MHz  
750  
100  
4
DC current gain  
Trainsistion frequency  
MHz  
JMnic  
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2N6058/2N6059  
PACKAGE OUTLINE  
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)  
JMnic  

相关型号：

2N6059LEADFREE

 Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CENTRAL

2N6059_03

 SILICON NPN POWER DARLINGTON TRANSISTOR
STMICROELECTR

2N6059_10

 SILICON MULTI-EPITAXIAL NPN TRANSISTOR
SEME-LAB

2N6060

 Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
MICROSEMI

2N6060E3

 Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
MICROSEMI

2N6061

 Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-63, Metal, 3 Pin,
MICROSEMI

2N6061E3

 Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-63, Metal, 3 Pin,
MICROSEMI

2N6062

 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 60A I(C) | TO-210AE
ETC

2N6063

 TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 60A I(C) | TO-210AE
ETC

2N6063E3

 Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
MICROSEMI

2N6067

 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 100MA I(C) | TO-92
ETC

2N6068

 PEEK GATE TRIGGER CURRENT
NJSEMI
©2020 ICPDF网 联系我们和版权申明