2N6058 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6058 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6058 2N6059
DESCRIPTION
·With TO-3 package
·High current ;high dissipation
·DARLINGTON
·Complement to type 2N5883;2N5884
APPLICATIONS
·They are intended for use in power linear
and low frequency switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
80
UNIT
2N6058
2N6059
2N6058
2N6059
VCBO
Collector-base voltage
Open emitter
V
100
80
VCEO
Collector-emitter voltage
Open base
V
100
5
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
V
A
12
Collector current-peak
Base current
20
A
0.2
mA
W
℃
℃
PD
Tj
Total Power Dissipation
Junction temperature
Storage temperature
TC=25℃
150
200
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
VALUE
UNIT
Rth j-c
1.17
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6058 2N6059
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
80
TYP.
MAX
UNIT
2N6058
2N6059
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A ;IB=0
V
100
VCEsat-1
VCEsat-2
VBEsat
VBE
Collector-emitter saturation voltage IC=6A ;IB=24mA
Collector-emitter saturation voltage IC=12A ;IB=120mA
2.0
3.0
4.0
2.8
V
V
V
V
Base-emitter saturation voltage
Base-emitter on voltage
IC=12A ;IB=120mA
IC=6A ; VCE=3V
VCE=40V; IB=0
2N6058
ICEO
Collector cut-off current
1.0
2.0
mA
mA
2N6059
VCE=50V; IB=0
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
VEB=5V; IC=0
IC=6A ; VCE=3V
IC=12A ; VCE=3V
IC=5A ;VCE=3V;f=1MHz
750
100
4
DC current gain
Trainsistion frequency
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6058 2N6059
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
相关型号：
2N6058LEADFREE
Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CENTRAL
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