2N6058 [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2N6058
型号: 2N6058
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 局域网
文件: 总3页 (文件大小:132K)
中文:  中文翻译
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Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6058 2N6059  
DESCRIPTION  
·With TO-3 package  
·High current ;high dissipation  
·DARLINGTON  
·Complement to type 2N5883;2N5884  
APPLICATIONS  
·They are intended for use in power linear  
and low frequency switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
3
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
80  
UNIT  
2N6058  
2N6059  
2N6058  
2N6059  
VCBO  
Collector-base voltage  
Open emitter  
V
100  
80  
VCEO  
Collector-emitter voltage  
Open base  
V
100  
5
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
12  
Collector current-peak  
Base current  
20  
A
0.2  
mA  
W
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25  
150  
200  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
1.17  
/W  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6058 2N6059  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
80  
TYP.  
MAX  
UNIT  
2N6058  
2N6059  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
IC=0.1A ;IB=0  
V
100  
VCEsat-1  
VCEsat-2  
VBEsat  
VBE  
Collector-emitter saturation voltage IC=6A ;IB=24mA  
Collector-emitter saturation voltage IC=12A ;IB=120mA  
2.0  
3.0  
4.0  
2.8  
V
V
V
V
Base-emitter saturation voltage  
Base-emitter on voltage  
IC=12A ;IB=120mA  
IC=6A ; VCE=3V  
VCE=40V; IB=0  
2N6058  
ICEO  
Collector cut-off current  
1.0  
2.0  
mA  
mA  
2N6059  
VCE=50V; IB=0  
IEBO  
hFE-1  
hFE-2  
fT  
Emitter cut-off current  
DC current gain  
VEB=5V; IC=0  
IC=6A ; VCE=3V  
IC=12A ; VCE=3V  
IC=5A ;VCE=3V;f=1MHz  
750  
100  
4
DC current gain  
Trainsistion frequency  
MHz  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6058 2N6059  
PACKAGE OUTLINE  
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)  
3

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