2N6058 [ONSEMI]
Darlington Complementary Silicon Power Transistors; 达林顿互补硅功率晶体管
| 型号： | 2N6058 |
| 厂家： | 
ONSEMI |
| 描述： | Darlington Complementary Silicon Power Transistors |
| 文件： | 总8页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
PNP
*
Darlington Complementary
Silicon Power Transistors
2N6052
NPN
. . . designed for general–purpose amplifier and low frequency
switching applications.
2N6058
• High DC Current Gain —
*
h
= 3500 (Typ) @ I = 5.0 Adc
FE
C
2N6059
*ON Semiconductor Preferred Device
• Collector–Emitter Sustaining Voltage — @ 100 mA
V
= 80 Vdc (Min) — 2N6058
CEO(sus)
100 Vdc (Min) — 2N6052, 2N6059
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
DARLINGTON
12 AMPERE
MAXIMUM RATINGS (1)
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80–100 VOLTS
150 WATTS
2N6052
2N6059
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base voltage
Symbol
2N6058
80
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
100
V
80
100
CB
EB
V
5.0
Collector Current — Continuous
Peak
I
C
12
20
Base Current
I
B
0.2
Adc
Total Device Dissipation
P
D
150
Watts
@T = 25_C
C
Derate above 25_C
0.857
W/_C
_C
CASE 1–07
TO–204AA
(TO–3)
Operating and Storage Junction
Temperature Range
T , T
–65 to +200_C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Rating
Unit
Thermal Resistance, Junction to Case
(1) Indicates JEDEC Registered Data.
R
1.17
_C/W
θ
JC
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
200
T , CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2001 – Rev. 2
2N6052/D
2N6052
*ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (2)
V
Vdc
CEO(sus)
(I = 100 mAdc, I = 0)
2N6058
2N6052, 2N6059
C
B
80
100
—
—
Collector Cutoff Current
(V = 40 Vdc, I = 0)
I
mAdc
mAdc
mAdc
CEO
2N6058
2N6052, 2N6059
CE
B
—
—
1.0
1.0
(V = 50 Vdc, I = 0)
CE
B
Collector Cutoff Current
I
CEX
EBO
(V = Rated V
, V
= 1.5 Vdc)
= 1.5 Vdc, T = 150_C)
CE
CEO BE(off)
—
—
0.5
5.0
(V = Rated V
, V
CE
CEO BE(off)
C
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
2.0
BE
C
ON CHARACTERISTICS (2)
DC Current Gain
h
FE
—
(I = 6.0 Adc, V = 3.0 Vdc)
C
CE
750
100
18,000
—
(I = 12 Adc, V = 3.0 Vdc)
C
CE
Collector–Emitter Saturation Voltage
(I = 6.0 Adc, I = 24 mAdc)
V
V
Vdc
CE(sat)
BE(sat)
C
B
—
—
2.0
3.0
(I = 12 Adc, I = 120 mAdc)
C
B
Base–Emitter Saturation Voltage
(I = 12 Adc, I = 120 mAdc)
—
4.0
Vdc
Vdc
C
B
Base–Emitter On Voltage
(I = 6.0 Adc, V = 3.0 Vdc)
V
BE(on)
—
2.8
C
CE
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small–Signal Short Circuit Forward
Current Transfer Ratio
|h |
fe
4.0
—
MHz
(I = 5.0 Adc, V = 3.0 Vdc, f = 1.0 MHz)
C
CE
Output Capacitance
(V = 10 Vdc, I = 0, f = 0.1 MHz)
2N6052
2N6058/2N6059
C
h
—
—
500
300
pF
—
ob
CB
E
Small–Signal Current Gain
(I = 5.0 Adc, V = 3.0 Vdc, f = 1.0 kHz)
300
—
fe
C
CE
*Indicates JEDEC Registered Data.
(2) Pulse test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
V
CC
-ā30 V
10
R
& R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
D MUST BE FAST RECOVERY TYPE, eg:
B
2N6052
2N6059
1
5.0
ă1N5825 USED ABOVE I ≈ 100 mA
ăMSD6100 USED BELOW I ≈ 100 mA
B
R
C
t
s
SCOPE
B
TUT
2.0
V
2
R
B
t
approx
+ā8.0 V
f
1.0
0.5
D
1
≈ 5.0 k
51
≈ 50
0
t
r
V
1
+ā4.0 V
approx
-ā8.0 V
V
= 30 V
I /I = 250
CC
t @ V
d
= 0
BE(off)
25 µs
for t and t , D is disconnected
d
r
1
C B
0.2
0.1
and V = 0
I
= I
2
B1 B2
t , t ≤ 10 ns
r
f
DUTY CYCLE = 1.0%
T = 25°C
J
0.2
0.5
1.0
3.0
5.0
10
20
For NPN test circuit reverse diode and voltage polarities.
I , COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
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2
2N6052
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
P
(pk)
R
R
(t) = r(t) R
θ
JC
= 1.17°C/W MAX
θ
JC
JC
0.1
0.07
0.05
θ
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
t
1
1
t
2
0.03
0.02
0.01
T
- T = P θ
C (pk) JC
(t)
J(pk)
DUTY CYCLE, D = t /t
1 2
SINGLE
PULSE
0.01
0.01
0.02
0.03 0.05 0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20 30
50
100
200 300 500
1000
Figure 4. Thermal Response
ACTIVE–REGION SAFE OPERATING AREA
50
50
0.1 ms
0.1 ms
20
10
20
10
0.5 ms
5.0
5.0
0.5 ms
1.0 ms
5.0 ms
1.0 ms
5.0 ms
2.0
1.0
0.5
2.0
1.0
0.5
T = 200°C
J
T = 200°C
J
SECOND BREAKDOWN LIMĆ
ITED
BONDING WIRE LIMITED
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION
0.2
0.1
0.2
0.1
d
c
d
c
THERMAL LIMITATION
@T = 25°C (SINGLE PULSE)
C
@T = 25°C (SINGLE PULSE)
C
0.05
0.05
10
20
30
50
70
100
10
20
30
50
70
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE
(VOLTS)
Figure 5. 2N6058
Figure 6. 2N6052, 2N6059
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
pulse limits are valid for duty cycles to 10% provided T
J(pk)
v 200_C; T
may be calculated from the data in Figure
J(pk)
breakdown. Safe operating area curves indicate I – V
4. At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
C
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5, 6, and 7 is based on T
T is variable depending on conditions. Second breakdown
C
= 200_C;
J(pk)
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3
2N6052
500
3000
2000
T
= 25°C
= 3.0 V
= 5.0 A
T = 25°C
J
C
V
I
CE
300
200
1000
500
C
C
ib
C
200
100
ob
100
70
2N6052
2N6058/2N6059
2N6052
2N6058/2N6059
50
30
50
0.1 0.2
0.5 1.0 2.0
5.0
10 20
50 100
1.0
2.0
5.0
10
20
50 100 200
500 1000
V , REVERSE VOLTAGE (VOLTS)
R
f, FREQUENCY (kHz)
Figure 8. Capacitance
Figure 7. Small–Signal Current Gain
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4
2N6052
PNP
NPN
2N6052
2N6058, 2N6059
20,000
10,000
40,000
20,000
V
CE
= 3.0 V
V
CE
= 3.0 V
T = 150°C
J
T = 150°C
J
10,000
5000
3000
2000
6,000
4,000
25°C
25°C
-ā55°C
1000
2,000
1,000
500
-ā55°C
300
200
600
400
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
50
20
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 9. DC Current Gain
3.0
2.6
2.2
1.8
1.4
1.0
3.0
T = 25°C
J
T = 25°C
J
2.6
2.2
1.8
I
C
= 3.0 A
6.0 A
9.0 A
12 A
I
C
= 3.0 A
6.0 A
9.0 A
12 A
1.4
1.0
0.5
1.0
2.0 3.0
5.0
10
20 30
50
0.5
1.0
2.0 3.0
5.0
10
20 30
I , BASE CURRENT (mA)
B
I , BASE CURRENT (mA)
B
Figure 10. Collector Saturation Region
3.0
2.5
2.0
3.0
T = 25°C
J
T = 25°C
J
2.5
2.0
V
@ I /I = 250
C B
V
@ I /I = 250
BE(sat)
BE(sat) C B
1.5
1.0
0.5
1.5
1.0
0.5
V
@ V = 3.0 V
CE
V
BE
@ V = 3.0 V
CE
BE
V
@ I /I = 250
C B
CE(sat)
V
@ I /I = 250
C B
CE(sat)
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 11. “On” Voltages
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5
2N6052
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
C
SEATING
PLANE
–T–
E
K
D 2 PL
INCHES
DIM MIN MAX
1.550 REF
MILLIMETERS
M
M
M
Y
0.13 (0.005)
T
Q
MIN
MAX
A
B
C
D
E
G
H
K
L
39.37 REF
U
---
0.250
0.038
0.055
1.050
---
6.35
0.97
1.40
26.67
8.51
1.09
1.77
–Y–
L
V
H
0.335
0.043
0.070
2
1
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
B
G
11.18
12.19
16.89 BSC
N
Q
U
V
---
0.151
0.830
---
3.84
21.08
4.19
–Q–
0.13 (0.005)
0.165
0.188
M
M
Y
T
1.187 BSC
0.131
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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6
2N6052
Notes
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7
2N6052
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2N6052/D
相关型号：
2N6058LEADFREE
Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
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