2N6058 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6058 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N6058/2N6059
DESCRIPTION
·With TO-3 package
·High gain
·High current
·High dissipation
·Complement to type 2N5883/2N5884
APPLICATIONS
·They are intended for use in power linear
and low frequency switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
3
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
Open emitter
VALUE
UNIT
2N6058
2N6059
2N6058
2N6059
80
Collector-base
VCBO
V
voltage
100
80
Collector-emitter
voltage
VCEO
Open base
V
100
5
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
V
A
12
Collector current-peak
Base current
20
A
0.2
mA
W
℃
℃
PD
Tj
Total Power Dissipation
Junction temperature
Storage temperature
TC=25℃
150
200
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.17
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N6058/2N6059
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6058
2N6059
80
V
Collector-emitter
sustaining voltage
VCEO(sus)
IC=0.1A ;IB=0
100
V
V
V
V
V
VCEsat-1
VCEsat-2
VBEsat
VBE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
IC=6A IB=24mA
IC=12A IB=120mA
IC=12A IB=120mA
IC=6A ; VCE=3V
VCE=40V; IB=0
2
3
4
2.8
2N6058
Collector cut-off current
2N6059
ICEO
1
2
mA
mA
VCE=50V; IB=0
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
VEB=5V; IC=0
IC=6A ; VCE=3V
IC=12A ; VCE=3V
IC=5A ;VCE=3V;f=1MHz
750
100
4
DC current gain
Trainsistion frequency
MHz
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N6058/2N6059
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
JMnic
相关型号：
2N6058LEADFREE
Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CENTRAL
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