2N6057_12 [COMSET]
POWER COMPLEMENTARY SILICON TRANSISTORS; 电源互补硅晶体管
| 型号： | 2N6057_12 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | POWER COMPLEMENTARY SILICON TRANSISTORS |
| 文件： | 总3页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN 2N6057 – 2N6058 – 2N6059
POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6057, 2N6058 and 2N6059 are silicon epitaxial-base transistors in monolithic Darlington
configuration mounted in Jedec TO-3 metal case.
They are inteded for use in power linear and low frequency switching applications.
The complementary PNP types are 2N6050, 2N6051 and 2N6052 respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
Ratings
Value
Unit
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
60
80
100
60
80
100
60
80
100
5.0
Collector-Base Voltage
Collector-EmitterVoltage
Collector-EmitterVoltage
IE=0
IB=0
V
VCEO
V
V
VCEX
VBE= 1.5 V
IC=0
VEBO
IC
Emitter-Base Voltage
Collector Current
V
A
12
ICM
IB
PT
TJ
Collector Peak Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
20
A
mA
W
200
150
200
-65 to +200
@ TC < 25°
°C
Ts
THERMAL CHARACTERISTICS
Symbol
RthJ-C
Ratings
Value
Unit
Thermal Resistance, Junction to Case
1.17
°C/W
17/10/2012
COMSET SEMICONDUCTORS
1 | 3
NPN 2N6057 – 2N6058 – 2N6059
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ MAx Unit
VCE= VCEX =60 V, VBE=-1.5 V 2N6050
VCE= VCEX =80 V, VBE=-1.5 V 2N6051
-
-
-
-
500
5
µA
VCE= VCEX =100 V
VBE=-1.5 V
2N6052
-
-
-
-
-
-
-
-
Collector Cutoff
Current
VCE= VCEX =60 V, VBE=-1.5 V
TC=150°C
ICEX
2N6050
VCE= VCEX =80 V, VBE=-1.5 V
TC=150°C
2N6051
mA
VCE= VCEX =100 V
VBE=-1.5 V, TC=150°C
2N6052
VCE=30 Vdc, IB=0
VCE=40 Vdc, IB=0
VCE=50 Vdc, IB=0
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
-
-
-
-
-
-
60
80
-
-
-
-
-
-
-
-
-
Collector Cutoff
Current
ICEO
1.0
2.0
mA
mA
V
Emitter Cutoff
Current
IEBO
VEB=5 V
-
-
-
Collector-Emitter
VCEO(SUS) Sustaining Voltage IC=0.1 A
(*)
2N6052 100
2N6050
IC=6 A, IB=24 mA
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
-
-
-
-
-
-
-
-
2.0
Collector-Emitter
saturation Voltage
(*)
VCE(SAT)
V
IC=12 A, IB=120 mA
-
3.0
Base-Emitter
VBE(SAT)
VBE(ON)
fT
Saturation Voltage IC=12 A, IB=120 mA
(*)
-
4
V
V
Base-Emitter
IC=6 A, VCE=3 V
Voltage (*)
-
2.8
Transition
IC=5 A, VCE=3 V, f=1 MHz
Frequency
4
-
18000
-
MHz
-
VCE=3 V, IC=6.0 A
2N6051 750
2N6052
2N6050
2N6051 100
2N6052
DC Current Gain
(*)
hFE
VCE=3.0 V, IC=12 A
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
17/10/2012 COMSET SEMICONDUCTORS
2 | 3
NPN 2N6057 – 2N6058 – 2N6059
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
max
13.10
A
B
C
D
F
11
0.97
1.5
1.15
1.65
8.92
20
8.32
19
G
N
P
R
U
V
10.70
16.50
25
11.1
17.20
26
4
4.09
39.30
30.30
38.50
30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
17/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3 | 3
相关型号：
2N6058LEADFREE
Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
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