AOD402L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD402L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD402
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD402 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, laod
switching and general purpose applications.
Standard Product AOD402 is Pb-free (meets ROHS
& Sony 259 specifications). AOD402L is a Green
Product ordering option. AOD402 and AOD402L are
electrically identical.
VDS (V) = 30V
ID = 18 A (VGS = 20V)
RDS(ON) < 15 mΩ (VGS = 20V)
RDS(ON) < 18 mΩ (VGS = 10V)
RDS(ON) < 44 mΩ (VGS = 4.5V)
TO-252
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
±25
18
V
A
TC=25°C
TC=100°C
ID
12
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
40
18
A
40
mJ
TC=25°C
Power Dissipation B
TC=100°C
60
PD
W
30
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
16.7
40
Max
25
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
50
Steady-State
Steady-State
RθJC
1.9
2.5
Alpha & Omega Semiconductor, Ltd.
AOD402
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±25V
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS, ID=250µA
1
2.4
VGS=10V, VDS=5V
40
A
V
GS=20V, ID=18A
12
17.4
15
15
21
18
44
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=18A
GS=4.5V, ID=6A
mΩ
V
36
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=18A
IS=18A, VGS=0V
24
S
V
A
0.8
1
Maximum Body-Diode Continuous Current
18
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
769
185
131
0.7
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
15.9
2.44
4.92
6.2
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=10V, ID=18A
VGS=10V, VDS=15V, ID=18A,
10.9
16
RL=0.82Ω, RGEN=3Ω
tD(off)
tf
4.8
trr
IF=18A, dI/dt=100A/µs
IF=18A, dI/dt=100A/µs
18
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
8.1
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depend
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
D
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires. Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
10V
6V
7V
35
30
25
20
15
10
5
25
20
15
10
5
VDS=5V
5V
125°C
4.5V
VGS=4V
25°C
3.5V
0
0
2
2.5
3
3.5
4
4.5
5
5.5
0
1
2
3
4
5
V
GS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
60
1.8
50
40
30
20
10
0
1.6
1.4
1.2
1
VGS=10V, 18A
VGS=4.5V
VGS=20V,18A
VGS=10V
VGS=20V
0
5
10
15
20
25
30
0.8
0
25
50
75
100
125
150
175
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
50
40
30
20
10
0
ID=18A
125°C
125°C
25°C
25°C
4
8
12
16
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOD402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
1000
10
VDS=15V
ID=18A
8
Ciss
800
6
600
Coss
4
400
2
200
Crss
0
0
0
4
8
12
16
20
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
60
50
40
30
20
10
0
TJ(Max)=150°C, TA=25°C
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
1ms
10ms
0.1s
100µs
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
V
DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
T
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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