AOD403L [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AOD403L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD403
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD403 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard Product
AOD403 is Pb-free (meets ROHS & Sony 259
specifications). AOD403L is a Green Product
ordering option. AOD403 and AOD403L are
electrically identical.
VDS (V) = -30V
ID = -85A (VGS = -20V)
R
DS(ON) < 6mΩ (VGS = -20V)
DS(ON) < 7.6mΩ (VGS = -10V)
R
TO-252
D-PAK
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
±25
-85
V
A
TA=25°C G
TA=100°C B
ID
-65
IDM
IAR
EAR
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
-200
-30
A
120
mJ
TC=25°C
Power Dissipation B
TC=100°C
100
PD
W
50
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
Symbol
Typ
13
Max
20
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
39
50
RθJL
0.56
1.5
Alpha & Omega Semiconductor, Ltd.
AOD403
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-24V, VGS=0V
-0.01
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±25V
±100
-3.5
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-1.5
-60
-2.6
VGS=-10V, VDS=-5V
A
V
GS=-20V, ID=-20A
5.1
7.1
6
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
8.5
7.6
VGS=-10V, ID=-20A
VDS=-5V, ID=-20A
IS=-1A,VGS=0V
6.3
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
44
S
V
A
-0.72
-1
Maximum Body-Diode Continuous Current
-104
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
4360 5300
1050
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
762
VGS=0V, VDS=0V, f=1MHz
2.5
3
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
93.2
18
120
nC
nC
nC
ns
ns
ns
ns
V
GS=-10V, VDS=-15V, ID=-20A
29.2
18
25
45
75
50
48
37
30
VGS=-10V, VDS=-15V, RL=0.75Ω,
R
GEN=3Ω
tD(off)
tf
51
35
trr
IF=-20A, dI/dt=100A/µs
IF=-20A, dI/dt=100A/µs
39.5
30.8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on steady-state RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev 4: Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
100
80
60
40
20
0
-10V
VDS=-5V
-6V
-5V
-4.5V
125°C
-4V
25°C
VGS=-2V
4
0
1
2
3
5
2
2.5
3
3.5
4
4.5
5
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
10
8
1.6
1.4
1.2
1
ID=-20A
VGS=-10V
VGS=-20V
6
VGS=-10V
4
VGS=-20V
2
0
0.8
0
10
20
30
40
50
60
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+02
24
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
20
16
12
8
ID=-20A
125°C
25°C
125°C
4
1.0E-05
25°C
4
8
12 16 20
1.0E-06
-VGS (Volts)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Figure 5: On-Resistance vs. Gate-Source Voltage
-VSD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOD403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7000
10
8
VDS=-15V
ID=-20A
6000
5000
4000
3000
2000
1000
0
Ciss
6
4
Coss
2
Crss
0
0
10 20 30 40 50 60 70 80 90 100
0
5
10
15
-VDS (Volts)
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
80
60
40
20
0
10µs
1ms
100µs
10ms
0.1s
1s
TJ(Max)=150°C
TA=25°C
10s
DC
10
1
0.01
0.1
1
10
100
1000
0.1
Pulse Width (s)
0.1
1
100
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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