AOD405L [ETC]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AOD405L |
| 厂家： | 
ETC |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Rev 3: Sept 2004
AOD405, AOD405L (Green Product)
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD405 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. AOD405L (Green
Product) is offered in a lead-free package.
VDS (V) = -30V
ID = -18A
RDS(ON) < 32mΩ (VGS = -10V)
RDS(ON) < 60mΩ (VGS = -4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
V
VDS
Drain-Source Voltage
-30
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
±20
-18
-18
V
TA=25°C G
TA=100°C G
ID
A
IDM
IAR
EAR
Pulsed Drain Current
-40
-18
40
60
Avalanche Current C
A
mJ
Repetitive avalanche energy L=0.1mH C
TC=25°C
PD
W
Power Dissipation B
TC=100°C
30
TA=25°C
TA=70°C
2.5
1.6
PDSM
W
Power Dissipation A
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
16.7
40
Max
25
50
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Steady-State
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
RθJL
1.9
2.5
Alpha & Omega Semiconductor, Ltd.
AOD405, AOD405L
Electrical Characteristics (T =25°C unless otherwise noted)
J
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-24V, VGS=0V
-0.003
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-18A
±100
-2.4
nA
V
A
-1.2
-40
-2
24.5
36
41
32
43
60
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-10A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
DS=-5V, ID=-18A
17
-0.76
S
V
A
IS=-1A,VGS=0V
-1
-18
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
920
190
122
3.6
1100
4.5
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
18.7
9.7
2.54
5.4
9
25
20
12
23
11.7
nC
nC
nC
nC
ns
ns
ns
ns
Qg(4.5V)
VGS=-10V, VDS=-15V, ID=-18A
Qgs
Qgd
tD(on)
tr
13
35
30
18
V
GS=-10V, VDS=-15V, RL=0.82Ω,
GEN=3Ω
R
tD(off)
tf
trr
Qrr
IF=-18A, dI/dt=100A/µs
IF=-18A, dI/dt=100A/µs
21.4
13
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
26
16
ns
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any a given
application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOD405, AOD405L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
-4.5V
-10V
-6V
-5V
VDS=-5V
-4V
-3.5V
125°C
VGS=-3V
3
25°C
3.5
0
0
0
1
2
4
5
0
0.5
1
1.5
2
2.5
3
4
4.5
5
-VDS (Volts)
Fig 1: On-Region Characteristics
-VGS(Volts)
Figure 2: Transfer Characteristics
70
1.60
1.40
1.20
1.00
0.80
65
60
55
50
45
40
35
30
25
20
15
10
VGS=-4.5V
ID=-10A
VGS=-4.5V
VGS=-10V
ID=-18A
VGS=-10V
0
25
50
75
100
125
150
175
0
5
10
15
20
25
Temperature (°C)
-ID (A)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
70
60
50
40
30
20
10
0
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-18A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD405, AOD405L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
1.00E+01
8.00E+00
6.00E+00
4.00E+00
2.00E+00
0.00E+00
VDS=-15V
ID=-18A
1250
1000
750
500
250
0
Ciss
Coss
Crss
0
4
8
12
-Qg (nC)
Figure 7: Gate-Charge Characteristics
16
20
0
5
10
15
-VDS (Volts)
20
25
30
Figure 8: Capacitance Characteristics
100.0
TJ(Max)=150°C, TA=25°C
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
1ms
10.0
1.0
100µs
10ms
0.1s
0.1
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=50°C/W
1
0.1
P
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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