AOD406 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD406 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD406
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD406 uses advanced trench technology to provide
excellent RDS(ON), shoot-through immunity and body diode
characteristics. This device is ideally suited for use as a low
side switch in CPU core power conversion. Standard
Product AOD406 is Pb-free (meets ROHS & Sony 259
specifications). AOD406L is a Green Product ordering
option. AOD406 and AOD406L are electrically identical.
VDS (V) = 30V
ID = 85A (VGS = 10V)
R
DS(ON) < 5.0mΩ (VGS = 10V)
DS(ON) < 5.7mΩ (VGS = 4.5V)
R
TO-252
D-PAK
D
S
Top View
Drain Connected
to Tab
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
±12
85
V
A
TC=25°C G
TC=100°C B
ID
75
IDM
IAR
EAR
Pulsed Drain Current
Avalanche Current C
200
30
A
Repetitive avalanche energy L=0.1mH C
140
100
50
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
14.2
40
Max
20
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
50
RθJL
0.56
1.5
Alpha & Omega Semiconductor, Ltd.
AOD406
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=24V, VGS=0V
0.005
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=20A
100
1.5
nA
V
VGS(th)
ID(ON)
0.8
1.1
100
A
4
5
7
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
5.8
mΩ
S
V
V
GS=4.5V, ID=20A
DS=5V, ID=20A
4.6
5.7
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
102
0.64
IS=1A,VGS=0V
1
V
Maximum Body-Diode Continuous Current
85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
9130 10500
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
625
387
VGS=0V, VDS=0V, f=1MHz
0.4
0.5
85
SWITCHING PARAMETERS
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
72.4
13.4
16.8
14.7
14.2
105.5
23.5
30.5
21
nC
nC
nC
ns
ns
ns
ns
V
GS=4.5V, VDS=15V, ID=20A
22
21
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
tD(off)
tf
150
35
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
40
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
33
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on steady-state RθJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation P is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
D
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability. Rev 1: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOD406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
60
50
40
30
20
10
0
10V
VDS=5V
4.5V
3.0V
2.5V
VGS=2V
125°C
25°C
2
0
1
2
3
4
5
0
0.5
1
1.5
2.5
V
DS (Volts)
VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
5.0
4.5
4.0
3.5
3.0
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=20A
VGS=4.5V
VGS=10V
VGS=10V
0.8
0
20
40
60
80
100
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
16
12
8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
25°C
4
25°C
0
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
2
4
6
8
10
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12000
5
4
3
2
1
0
VDS=15V
ID=20A
10000
8000
6000
4000
2000
0
Ciss
Coss
Crss
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
60
70
80
90
0
5
10
15
VDS (Volts)
20
25
30
Figure 8: Capacitance Characteristics
1000
100
10
100
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10µs
100µs
80
60
40
20
0
10ms
0.1s
1ms
1s
10s
TJ(Max)=150°C
TA=25°C
1
DC
0.1
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
1
0.1
PD
0.01
Ton
Single Pulse
0.001
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOD406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
120
100
80
60
40
20
0
TA=25°C
L⋅ ID
tA
=
BV −VDD
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0.01
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
T
100
80
60
40
20
0
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
T
Alpha & Omega Semiconductor, Ltd.
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