AOD404 [FREESCALE]
N-Channel 20-V (D-S) MOSFET High performance trench technology; N通道20 -V （ DS ） MOSFET高性能沟道技术
| 型号： | AOD404 |
| 厂家： | 
Freescale |
| 描述： | N-Channel 20-V (D-S) MOSFET High performance trench technology |
| 文件： | 总3页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AOD404/MCD404
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
58
10 @ VGS = 4.5V
16 @ VGS = 2.5V
20
46
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
•
•
Fast switching speed
High performance trench technology
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
20
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
V
VGS
±8
TC=25oC
TC=25oC
58
40
30
50
ID
A
IDM
IS
A
W
oC
PD
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Symbol
Maximum Units
oC/W
RθJA
50
oC/W
3.0
RθJC
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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AOD404/MCD404
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Unit
Parameter
Symbol
Test Conditions
Min Typ Max
Static
Gate-Th res ho ld Voltag e
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 8 V
0.4
V
±100
1
Gate-Body Leakage
nA
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 55oC
Zero Gate Voltage Drain Current
On-State Drain CurrentA
IDSS
uA
25
ID(on)
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 51 A
VGS = 2.5 V, ID = 41 A
34
A
10
16
Drain-Source On-ResistanceA
rDS(on)
mΩ
Forward TranconductanceA
Diode Forward Voltage
gfs
VDS = 10 V, ID = 51 A
IS = 34 A, VGS = 0 V
22
S
VSD
1.1
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charg e
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
4.0
1.1
1.4
16
5
V
DS = 10 V, VGS = 4.5 V,
nC
nS
ID = 51 A
D
VDD = 15 V, RL = 25 Ω , I = 34 A,
GEN
V
= 10 V
Turn-Off Delay Time
Fall-Time
td(off)
tf
23
3
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
b.
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or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou t of the application or
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damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
under its patent rights nor the
are not designed,
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intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
of the freescale product could create
sustain life, or for any other application in which the failure
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and its
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Freescale
AOD404/MCD404
Package Information
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