AOB409L [AOS]
60V P-Channel MOSFET; 60V P沟道MOSFET
| 型号： | AOB409L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 60V P-Channel MOSFET |
| 文件： | 总6页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOB409L
60V P-Channel MOSFET
General Description
Product Summary
VDS
-60V
The AOB409L combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS =-4.5V)
-31.5A
< 38mΩ
< 50mΩ
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
D
Top View
Bottom View
D
D
G
S
S
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-60
V
Gate-Source Voltage
VGS
±20
-31.5
-22
V
A
TC=25°C
Continuous Drain
Current
ID
TC=100°C
Pulsed Drain Current C
IDM
-85
TA=25°C
TA=70°C
-5
Continuous Drain
Current
IDSM
A
-4
Avalanche Current C
IAS, IAR
37
A
Avalanche energy L=0.1mH C
EAS, EAR
68
mJ
TC=25°C
Power Dissipation B
TC=100°C
83.3
41.6
2.1
PD
W
TA=25°C
PDSM
W
°C
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
11
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
15
60
RθJA
Steady-State
Steady-State
47
RθJC
1.5
1.8
Rev 0: Sep. 2011
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Page 1 of 6
AOB409L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-60
V
VDS=-60V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS， ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-2.4
nA
V
VGS(th)
ID(ON)
-1.2
-85
-2.1
A
30
53
38
66
50
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-20A
39
mΩ
S
VDS=-5V, ID=-20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
32
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current G
-0.72
-1
V
60
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1969 2461 2953
pF
pF
pF
Ω
VGS=0V, VDS=-30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
125
72
178
120
2
231
168
4
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
34
16
8
43
19.7
10.2
8.9
52
24
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=-10V, VDS=-30V, ID=-20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
12
5
12.5
12
VGS=-10V, VDS=-30V, RL=1.5Ω,
RGEN=3Ω
14.5
38
ns
tD(off)
tf
ns
15
ns
trr
IF=-20A, dI/dt=500A/µs
IF=-20A, dI/dt=500A/µs
18
25.7
167
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
33
ns
Qrr
117
nC
217
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Sep. 2011
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Page 2 of 6
AOB409L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
30
25
20
15
10
5
-10V
-5V
VDS=-5V
-6V
-4.5V
-4V
125°C
-3.5V
VGS=-3V
4
25°C
0
0
1
2
3
4
5
6
0
1
2
3
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
50
45
40
35
30
25
20
2.4
2.2
2
VGS=-4.5V
VGS=-10V
ID=-20A
1.8
1.6
1.4
1.2
1
VGS=-4.5V
VGS=-10V
ID=-20A
0.8
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
30
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
100
80
1.0E+01
ID=-20A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
60
25°C
40
25°C
20
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Sep. 2011
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Page 3 of 6
AOB409L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3500
VDS=-30V
ID=-20A
3000
2500
2000
1500
1000
500
8
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
20
Qg (nC)
25
30
35
40
45
0
10
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
40
50
60
Figure 7: Gate-Charge Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
(Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.8°C/W
0.1
0.01
PD
Ton
T
Single Pulse
0.00001
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Sep. 2011
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Page 4 of 6
AOB409L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
TA=25°C
80
TA=100°C
100
60
TA=150°C
40
10
TA=125°C
20
1
0
1
10
100
1000
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
125
150
175
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
10000
1000
100
10
40
35
30
25
20
15
10
5
TA=25°C
0
1
0
25
50
75
TCASE (°C)
100
125
150
175
0.001 0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
0.1
Ton
T
0.001
0.001
0.01
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Sep. 2011
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Page 5 of 6
AOB409L
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
BVDSS
Vgs
Vdd
+
VDC
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 0: Sep. 2011
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Page 6 of 6
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