AO6400L [AOS]
Transistor;
| 型号： | AO6400L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO6400
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO6400/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. AO6400 and AO6400L are electrically
identical.
VDS (V) = 30V
ID = 6.9 A
(VGS = 10V)
R
R
R
DS(ON) < 28mΩ (VGS = 10V)
DS(ON) < 33mΩ (VGS = 4.5V)
DS(ON) < 52mΩ (VGS = 2.5V)
-RoHS Compliant
-AO6400L is Halogen Free
Rg,Ciss,Coss,Crss Tested
D
S
TSOP-6
Top View
1
2
3
6
5
4
D
D
G
D
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±12
6.9
V
A
TA=25°C
TA=70°C
ID
5.8
Pulsed Drain Current B
IDM
35
TA=25°C
TA=70°C
2
PD
W
Power Dissipation A
1.44
-55 to 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
47.5
74
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
RθJL
37
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO6400
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=6.9A
100
1.4
nA
V
VGS(th)
ID(ON)
0.7
35
1.1
A
22.3
31.5
26.8
42.8
15
28
39
33
52
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=4.5V, ID=6A
V
GS=2.5V, ID=5A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=5A
IS=1A,VGS=0V
10
S
V
A
0.71
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
823
99
1030
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
77
108
3.6
VGS=0V, VDS=0V, f=1MHz
0.6
1.2
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.6
1.65
3
12
nC
nC
nC
ns
ns
ns
ns
VGS=4.5V, VDS=15V, ID=5.8A
2.15
5.5
5.1
37
V
GS=10V, VDS=15V, RL=2.7Ω,
RGEN=6Ω
tD(off)
tf
4.2
16
trr
IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs
20
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
8.9
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The SOA curve provides a single pulse rating.
Rev10:Mar 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO6400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
16
12
8
25
20
15
10
5
10V
3V
4.5V
VDS=5V
2.5V
125°C
VGS=2V
25°C
4
0
0
0
1
2
3
4
5
0
0.5
1
1.5
VGS(Volts)
2
2.5
3
V
DS (Volts)
Fig 1: On-Region characteristics
Figure 2: Transfer Characteristics
60
50
40
30
20
10
1.8
1.6
1.4
1.2
1
VGS=4.5
VGS=2.5V
VGS=10V
VGS=4.5V
VGS=2.5V
VGS=10V
0.8
0
5
10
ID (A)
15
20
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
60
50
40
30
20
10
ID=5A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO6400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
5
4
3
2
1
0
VDS=15V
ID=6.9A
Ciss
Coss
Crss
0
2
4
6
8
10
12
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C
TJ(Max)=150°C
TA=25°C
TA=25°C
RDS(ON)
limited
100µs
1ms
10ms
0.1s
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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