AO4922_11 [AOS]
Asymmetric Dual N-Channel MOSFET; 非对称双N沟道MOSFET
| 型号： | AO4922_11 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Asymmetric Dual N-Channel MOSFET |
| 文件： | 总8页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4922
Asymmetric Dual N-Channel MOSFET
TM
SRFET
General Description
Product Summary
The AO4922 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A monolithically integrated Schottky
diode in parallel with the synchronous MOSFET to
boost efficiency further.
FET1
VDS (V) = 30V
ID = 9A
FET2
VDS(V) = 30V
ID=7.3A
(VGS = 10V)
RDS(ON) < 15.8mΩ <24mΩ
(VGS = 10V)
(VGS = 4.5V)
RDS(ON) < 18.5mΩ
<29mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Top View
Bottom View
D2
D1
Top View
S1
G1
S2
G2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
G2
G1
S1
S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max FET1 Max FET2
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
30
±12
9.0
7.2
40
30
±12
7.3
5.9
40
V
V
VGS
TA=25°C
TA=70°C
Continuous Drain
Current A
Pulsed Drain Current B
Avalanche Current B
A
IDSM
IDM
IAR
22
12
A
Repetitive avalanche energy L=0.3mH B
EAR
73
22
mJ
TA=25°C
Power DissipationA
TA=70°C
2.0
1.3
2.0
1.3
PDSM
W
°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150 -55 to 150
Thermal Characteristics FET1
Parameter
Symbol
Typ
48
Max
62.5
90
Units
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
°C/W
°C/W
°C/W
RθJA
Steady-State
Steady-State
74
32
Maximum Junction-to-Lead C
RθJL
40
Thermal Characteristics FET2
Parameter
Symbol
Typ
48
Max
62.5
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Steady-State
Steady-State
74
32
Maximum Junction-to-Lead C
RθJL
40
Alpha & Omega Semiconductor, Ltd.
AO4922
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250uA, VGS=0V
VDS=24V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
0.01
6
0.1
20
IDSS
Zero Gate Voltage Drain Current
mA
TJ=125°C
TJ=125°C
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
0.1
2.4
µA
V
VGS(th)
ID(ON)
1.5
40
1.8
A
V
GS=10V, ID=9A
13
20.2
15
15.8
25.2
18.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
V
GS=4.5V, ID=7A
mΩ
S
VDS=5V, ID=9A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
78
0.38
0.5
4
V
Maximum Body-Diode + Schottky Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1980
317
111
1.3
2574
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
2.0
43
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
33.0
15.0
5.3
6.0
5.5
5.5
27.0
4.3
11
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=15V, ID=9A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS=10V, VDS=15V, RL=1.7Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=9A, dI/dt=300A/µs
IF=9A, dI/dt=300A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
13
ns
Qrr
7
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM
are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev1: May 2011
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4922
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
30
25
20
15
10
5
VDS=5V
10V
6V
4.5V
VGS=3.5V
125°
25°C
3
0
0
1
2
3
4
5
1
1.5
2
2.5
VGS(Volts)
3.5
4
VDS (Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
18
16
14
12
10
2
VGS=10V
ID=9A
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=4.5V
ID=7A
VGS=10V
0.8
0
5
10
15
20
25
30
0
30
60
90
120
150
180
I
D (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
35
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=9A
125°C
30
25
20
15
10
25°C
125°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4922
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
2500
2000
1500
1000
500
10
8
Ciss
VDS=15V
ID=9A
6
4
Crss
2
Coss
0
0
0
5
10
15
20
Qg (nC)
25
30
35
40
0
5
10
15
VDS (Volts)
20
25
30
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
100
10µs
90
80
70
60
50
40
30
20
10
0
100µs
TJ(Max)=150°C
TA=25°C
10.0
RDS(ON)
10ms
limited
1ms
1.0
10s
1s
DC
0.1
0.0
TJ(Max)=150°C
TA=25°C
0.01
0.1
1
VDS (Volts)
10
100
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Figure10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
AO4922
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1
0.9
1.0E-02
20A
0.8
VDS=24V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.0E-03
1.0E-04
1.0E-05
1.0E-06
VDS=12V
10A
5A
IS=1A
0
50
100
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
150
200
0
50
100
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
Junction Temperature
25
20
15
10
5
8
6
4
2
0
15
2.5
2
125ºC
di/dt=800A/us
di/dt=800A/us
125ºC
12
9
25ºC
1.5
1
Qrr
Irm
trr
125ºC
25ºC
25ºC
6
25ºC
S
3
0.5
0
125ºC
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Is (A)
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
25
10
9
8
7
6
5
4
3
2
1
0
18
15
12
9
3
125ºC
25ºC
Is=20A
125ºC
25ºC
2.5
2
20
15
10
5
Is=20A
1.5
1
trr
125º
25ºC
25ºC
6
Qrr
Irm
3
0.5
0
S
125ºC
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A)
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
AO4922
FET2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=24V, VGS=0V
0.002
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=7.3A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
1.5
nA
V
VGS(th)
ID(ON)
0.7
40
1
A
20
28
24
35
29
48
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
VGS=2.5V, ID=5A
VDS=5V, ID=7.3A
IS=1A,VGS=0V
23.5
34.7
26
mΩ
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.71
1
V
Maximum Body-Diode Continuous Current
2.8
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
900
88
1100
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
65
VGS=0V, VDS=0V, f=1MHz
0.95
1.5
12
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
10
1.8
3.75
3.2
3.5
21.5
2.7
16.8
8
nC
nC
nC
ns
ns
ns
ns
VGS=4.5V, VDS=15V, ID=7.3A
V
GS=10V, VDS=15V, RL=2Ω,
GEN=6Ω
R
tD(off)
tf
trr
IF=7.3A, dI/dt=100A/µs
IF=7.3A, dI/dt=100A/µs
21
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev1: May 2011
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4922
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
20
16
12
8
10V
VDS=5V
4.5V
3V
125°C
2.5V
25°C
4
VGS=2V
0
0
1
2
3
4
5
0
0.5
1
1.5
VGS(Volts)
2
2.5
3
VDS (Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
30
25
20
15
1.8
1.5
1.2
0.9
0.6
ID=6A
VGS=4.5V
V
GS=4.5V
VGS=10V
ID=7.3A
VGS=10V
0
5
10
15
20
-50 -25
0
25
50
75 100 125 150 175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
60
55
50
45
40
35
30
1.0E+01
1.0E+00
ID=7.3A
125°C
1.0E-01
1.0E-02
1.0E-03
125°C
25°C
25
1.0E-04
G
20
25°C
1.0E-05
15
1.0E-06
10
-1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
2
4
6
8
10
V
SD (Volts)
V
GS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4922
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
5
4
3
2
1
0
VDS=15V
ID=7.3A
Ciss
Crss
Coss
0
2
4
6
8
10
12
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
Figure 8: Capacitance Characteristics
100.00
10.00
1.00
50
10µs
TJ(Max)=150°C
TA=25°C
100µs
40
30
20
10
0
RDS(ON)
limited
1ms
1s
10s
DC
TJ(Max)=150°C
TA=25°C
0.10
0.01
0.0001 0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
D
P
D=Ton/T
NG
0.01
TJ,PK=TA+PDM.ZθJA.RθJA
Ton
RθJA=62.5°C/W
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
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