AO4936 [FREESCALE]
N-Channel 30-V (D-S) MOSFET High performance trench technology; N通道30 -V ( DS ) MOSFET高性能沟道技术型号: | AO4936 |
厂家: | Freescale |
描述: | N-Channel 30-V (D-S) MOSFET High performance trench technology |
文件: | 总5页 (文件大小:413K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Freescale
AO4936/MC4936
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
VDS (V)
rDS(on) m(Ω)
ID (A)
6.5
32 @ VGS = 4.5V
40 @ VGS = 2.5V
30
5.8
1
2
3
4
8
7
•
•
Low rDS(on) provides higher efficiency and
extends battery life
6
5
Low thermal impedance copper leadframe
SOIC-8 saves board space
•
•
Fast switching speed
High performance trench technology
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
30
Units
Drain-Source Voltage
Gate-Source Voltage
V
VGS
±12
TA=25oC
TA=70oC
6.5
±5.3
±50
2.3
Continuous Drain Currenta
Pulsed Drain Currentb
ID
A
IDM
IS
Continuous Source Current (Diode Conduction)a
A
W
oC
TA=25oC
TA=70oC
2.0
Power Dissipationa
PD
1.3
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
oC/W
t <= 10 sec
Steady-State
62.5
Maximum Junction-to-Ambienta
RθJA
oC/W
110
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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AO4936/MC4936
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Unit
Parameter
Symbol
Test Conditions
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±12 V
0.7
±100 nA
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55oC
1
IDSS
Zero Gate Voltage Drain Current
uA
25
On-State Drain CurrentA
ID(on)
VDS = 5 V, VGS = ±12 V
VGS = 4.5 V, ID = 6.5 A
VGS = 2.5 V, ID = 5.8 A
20
A
32
40
Drain-Source On-ResistanceA
rDS(on)
mΩ
Forward TranconductanceA
Diode Forward Voltage
gfs
VDS = 15 V, ID = 6.5 A
IS = 2.3 A, VGS = 0 V
40
S
VSD
0.7
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
6.0
1.0
1.5
20
9
VDS = 15 V, VGS = 4.5 V,
ID = 6.5 A
nC
nS
VDD = 25 V, RL = 25 Ω , I
GEN = 10 V
D
= 1 A,
V
Turn-Off Delay Time
Fall-Time
td(off)
tf
70
20
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
rther notice to any products herein. RF EESCALE makes no
FREESCALE reserves the right to make changes without fu
warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or
use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any s uch unintended or unauthorized application, Buyer s hall indemnify and hold freescale and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
design or manufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
claim alleges that freescale was negligent regarding the
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AO4936/MC4936
Typical Electrical Characteristics
30
25
20
15
10
5
TA = -55oC
20
25oC
4.5V
125oC
15
2.5V
10
5
0
0
1
1.5
2
2.5
3
3.5
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1000
800
600
400
200
0
1.4
1.2
1
Ciss
Coss
Crss
VGS = 3.0V
4.5V
0.8
0
6
12
18
24
30
0
5
10
15
20
25
I
D - Drain Current (A)
V
DS - Drain-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current
10
1.6
1.4
1.2
1
8
6
4
2
0
VGS = 4.5V
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0
3
6
9
12
15
TJ - Junction Temperature (oC)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
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AO4936/MC4936
Typical Electrical Characteristics (N-Channel)
0.07
0.06
0.05
0.04
0.03
0.02
0.01
100
10
TA = 125oC
1
25oC
0.1
0.01
0.001
TA = 25oC
0.0001
0
2
2.5
3
3.5
4
4.5
5
0.2
0.4
0.6
0.8
1
1.2
1.4
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs.Gate-to Source Voltage
50
40
30
20
10
0
1.8
1.6
1.4
1.2
1
SINGLE PULSE
RθJA = 250°C/W
TA = 25°C
ID = 250
A
µ
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
100
1000
-50
-25
0
25
50
75
100
125
150
Time (sec)
TJ - Temperature (oC)
Threshold Voltage
Single Pulse Power
1
D=0.5
RθJA(t) = r(t) +
RθJA
0.2
0.1
RθJA = 250 °C/W
0.1
0.01
0.05
P(pk
0.02
0.01
t1
t2
TJ - TA = P *
RθJA(t)
SINGLEPULSE
Duty Cycle, D = t1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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AO4936/MC4936
Package Information
SO-8: 8LEAD
H x 45°
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