AO4924 [FREESCALE]
Asymmetric Dual N-Channel MOSFET; 非对称双N沟道MOSFET
| 型号： | AO4924 |
| 厂家： | 
Freescale |
| 描述： | Asymmetric Dual N-Channel MOSFET |
| 文件： | 总9页 (文件大小：772K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4924
Asymmetric Dual N-Channel MOSFET
General Description
The AO4924 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
-
and synchronous rectifier combination for use in DC
diode in parallel with the synchronous MOSFET to
two MOSFETs make a compact and efficient switch
DC converters. A monolithically integrated Schottky
boost efficiency further.
Features
FET1
VDS (V) = 30V
ID = 9A
FET2
VDS(V) = 30V
ID=7.3A
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
RDS(ON) < 15.8mΩ <24mΩ
RDS(ON) < 19.5mΩ <29mΩ
SOIC-8
D2
D1
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Top View
S1
G1
S2
G2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
G2
G1
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max FET1
Max FET2
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
30
30
V
V
VGS
±12
9.0
±12
7.3
TA=25°C
TA=70°C
Continuous Drain
Current A
Pulsed Drain Current B
Avalanche Current B
A
IDSM
IDM
7.2
5.9
40
40
IAR
16
12
A
Repetitive avalanche energy L=0.3mH B
EAR
38
22
mJ
TA=25°C
2.0
2.0
PDSM
W
°C
TA=70°C
Power Dissipation
1.3
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
-55 to 150
Thermal Characteristics FET1
Parameter
Symbol
Typ
48
Max
62.5
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
RθJL
Steady-State
Steady-State
74
32
Maximum Junction-to-Lead C
40
Thermal Characteristics FET2
Parameter
Symbol
Typ
48
Max
62.5
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
RθJL
Steady-State
Steady-State
74
32
Maximum Junction-to-Lead C
40
1/9
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AO4924
Asymmetric Dual N-Channel MOSFET
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=1mA, VGS=0V
VDS=24V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
0.01
5
0.1
10
IDSS
Zero Gate Voltage Drain Current
mA
TJ=125°C
TJ=125°C
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
0.1
2.4
µA
V
VGS(th)
ID(ON)
1.5
40
1.85
A
V
GS=10V, ID=9A
13
20.0
15.7
64
15.8
25.0
19.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
V
GS=4.5V, ID=7A
mΩ
S
VDS=5V, ID=9A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.4
0.6
4.5
V
Maximum Body-Diode + Schottky Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1450
224
92
1885
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1.6
3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
24.0
12.0
3.9
4.2
5.5
4.7
24.0
4.0
10
31
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=15V, ID=9A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS=10V, VDS=15V, RL=1.7Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=9A, dI/dt=300A/µs
IF=9A, dI/dt=300A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
13
ns
Qrr
6.8
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM
are based on T(J(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2: May 2011
2/9
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AO4924
Asymmetric Dual N-Channel MOSFET
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
30
25
20
15
10
5
VDS=5V
10V
6V
4.5V
4V
3.5V
VGS=3V
125°
25°C
3
0
0
1
2
3
4
5
1
1.5
2
2.5
3.5
4
V
DS (Volts)
VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
20
17
14
11
8
2
VGS=10V
ID=9A
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=4.5V
ID=7A
VGS=10V
0.8
0
5
10
15
20
25
30
0
30
60
90
120
150
180
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
45
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
40
35
30
25
20
15
10
5
ID=9A
125°C
25°C
125°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/9
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AO4924
Asymmetric Dual N-Channel MOSFET
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
2000
1500
1000
500
10
8
Ciss
VDS=15V
ID=9A
6
4
Crss
2
Coss
0
0
0
5
10
15
20
25
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.00
50
40
30
20
10
0
10µs
100µ
TJ(Max)=175°C
TC=25°C
RDS(ON)
limited
10.00
1.00
0.10
0.01
1ms
1s
10s
DC
TJ(Max)=150°C
TA=25°C
0.01
0.1
1
10
100
0.0001 0.001
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
D=Ton/T
0.01
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=90°C/W
Ton
Single Pulse
T
R
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
4/9
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AO4924
Asymmetric Dual N-Channel MOSFET
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
20A
VDS=24V
VDS=12V
10A
5A
IS=1A
0
50
100
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
150
200
0
50
100
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
Junction Temperature
30
25
20
15
10
5
12
10
8
12
3
di/dt=800A/us
di/dt=800A/us
125ºC
125ºC
10
8
2.5
2
trr
25ºC
25ºC
6
1.5
1
6
Qrr
Irm
125ºC
25ºC
4
4
125ºC
S
2
0.5
0
2
25ºC
0
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Is (A)
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
25
10
8
15
12
9
2.5
2
Is=20A
125ºC
20
15
10
5
Is=20A
125ºC
25ºC
6
1.5
1
25ºC
125º
trr
4
6
25ºC
2
Qrr
Irm
25ºC
125ºC
3
0.5
S
0
0
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A)
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
5/9
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AO4924
Asymmetric Dual N-Channel MOSFET
FET2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=7.3A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
1.5
nA
V
VGS(th)
ID(ON)
0.7
40
1
A
20
28
24
34
29
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=6A
VDS=5V, ID=7.3A
IS=1A,VGS=0V
23.5
26
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.71
1
V
Maximum Body-Diode Continuous Current
4.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
900
88
1100
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
65
V
0.95
1.5
12
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
10
1.8
3.75
3.2
3.5
21.5
2.7
16.8
8
nC
nC
nC
ns
ns
ns
ns
VGS=4.5V, VDS=15V, ID=7.3A
V
GS=10V, VDS=15V, RL=2Ω,
RGEN=6Ω
tD(off)
tf
trr
IF=7.3A, dI/dt=100A/µs
IF=7.3A, dI/dt=100A/µs
20
12
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2: May 2011
6/9
www.freescale.net.cn
AO4924
Asymmetric Dual N-Channel MOSFET
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
20
16
12
8
10V
VDS=5V
4.5V
3V
125°C
2.5V
25°C
4
VGS=2V
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
30
25
20
15
1.8
1.5
1.2
0.9
0.6
ID=6A
VGS=4.5V
VGS=4.5V
VGS=10V
VGS=10V
ID=7.3A
0
5
10
15
20
-50 -25
0
25 50 75 100 125 150 175
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
60
1.0E+01
1.0E+00
55
50
45
40
35
30
ID=7.3A
125°C
1.0E-01
1.0E-02
1.0E-03
125°C
25
1.0E-04
25°C
20
1.0E-05
25°C
15
1.0E-06
10
-1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
2
4
6
8
10
V
SD (Volts)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
7/9
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AO4924
Asymmetric Dual N-Channel MOSFET
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
5
4
3
2
1
0
VDS=15V
ID=7.3A
Ciss
Crss
Coss
0
2
4
6
8
10
12
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
Figure 8: Capacitance Characteristics
100.00
10.00
1.00
50
10µs
TJ(Max)=150°C
TA=25°C
100µs
1ms
1s
40
30
20
10
0
RDS(ON)
limited
10s
DC
0.10
TJ(Max)=150°C
TA=25°C
0.01
0.0001 0.001 0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
D=Ton/T
0.01
TJ,PK=TA+PDM.ZθJA.RθJA
Ton
RθJA=90°C/W
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
8/9
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AO4924
Asymmetric Dual N-Channel MOSFET
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
90%
Resistive Switching Test Circuit & Waveforms
RL
Vds
+
DUT
Vdd
Vgs
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
9/9
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