AO4926 [AOS]
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor; 非对称双N沟道增强型场效应晶体管
| 型号： | AO4926 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总8页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4926
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
TM
SRFET
Features
General Description
FET1
FET2
VDS(V) = 30V
ID=7.3A (VGS = 10V)
The AO4926 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A monolithically integrated Schottky diode in
parallel with the synchronous MOSFET to boost efficiency
further. Standard Product AO4926 is Pb-free (meets
ROHS & Sony 259 specifications).
V
DS (V) = 30V
ID = 9.5A
R
DS(ON) < 13.5mΩ <24mΩ
(VGS = 10V)
(VGS = 4.5V)
RDS(ON) < 16mΩ
<29mΩ
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SOIC-8
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max FET1 Max FET2
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current AF
Pulsed Drain Current B
Avalanche Current B
30
±12
9.5
7.8
40
30
±12
7.3
5.9
40
V
V
VGS
TA=25°C
TA=70°C
A
IDSM
IDM
A
A
IAR
22
12
Repetitive avalanche energy L=0.3mH B
EAR
73
22
mJ
TA=25°C
2.0
1.3
2.0
1.3
PDSM
W
Power Dissipation
TA=70°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150 -55 to 150
°C
Thermal Characteristics FET1
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
48
Max
62.5
90
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
74
32
RθJL
40
Thermal Characteristics FET2
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
48
Max
62.5
90
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
74
32
RθJL
40
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4926
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
VDS=30V, VGS=0V
30
V
0.02
10
0.1
mA
20
IDSS
Zero Gate Voltage Drain Current
TJ=125°C
TJ=125°C
µA
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=9.5A
0.1
VGS(th)
ID(ON)
1.5
40
1.8
2.4
V
A
11
17.1
13
13.5
21.3
16.0
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=7A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
DS=5V, ID=9.5A
78
S
V
A
IS=1A,VGS=0V
0.38
0.5
4
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1980 2574
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
317
111
VGS=0V, VDS=0V, f=1MHz
1.3
2.0
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
33.0
15.0
5.3
6.0
5.5
5.5
27.0
4.3
11
43
20
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=15V, ID=9A
VGS=10V, VDS=15V, RL=1.6Ω,
GEN=3Ω
R
tD(off)
tf
trr
IF=9.5A, dI/dt=300A/µs
IF=9.5A, dI/dt=300A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
13
ns
Qrr
7
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev1: June 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4926
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
30
25
20
15
10
5
VDS=5V
10V
6V
4.5V
VGS=3.5V
125°
25°C
3
0
0
1
2
3
4
5
1
1.5
2
2.5
VGS(Volts)
3.5
4
VDS (Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
16
14
12
10
8
2
VGS=10V
ID=9.5A
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=4.5V
ID=7A
VGS=10V
0.8
0
5
10
15
20
25
30
0
30
60
90
120
150
180
I
D (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=9.5A
125°C
125°C
25
20
15
10
5
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4926
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
2500
2000
1500
1000
500
10
8
Ciss
VDS=15V
ID=9.5A
6
4
Crss
2
Coss
0
0
0
5
10
15
20
25
30
35
40
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
100
10µs
90
80
70
60
50
40
30
20
10
0
100µs
TJ(Max)=150°C
TA=25°C
10.0
RDS(ON)
10ms
limited
1ms
1.0
10s
1s
DC
0.1
TJ(Max)=150°C
TA=25°C
0.0
0.01
0.1
1
10
100
0.0001 0.001
0.01
0.1
1
10
100
V
DS (Volts)
Pulse Width (s)
Figure10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4926
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1
0.9
1.0E-02
20A
0.8
VDS=24V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.0E-03
1.0E-04
1.0E-05
1.0E-06
VDS=12V
10A
5A
IS=1A
0
50
100
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
150
200
0
50
100
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
Junction Temperature
25
20
15
10
5
8
6
4
2
0
15
2.5
2
125ºC
di/dt=800A/us
di/dt=800A/us
125ºC
12
9
25ºC
1.5
1
Qrr
Irm
trr
125ºC
25ºC
25ºC
6
25ºC
S
3
0.5
0
125ºC
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Is (A)
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
25
10
9
8
7
6
5
4
3
2
1
0
18
15
12
9
3
125ºC
25ºC
Is=20A
125ºC
2.5
2
20
15
10
5
Is=20A
25ºC
1.5
1
trr
125º
25ºC
25ºC
6
Qrr
Irm
3
0.5
0
S
125ºC
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A)
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4926
FET2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
V
DS=30V, VGS=0V
0.002
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±12V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
1.5
nA
V
V
V
V
DS=VGS ID=250µA
GS=4.5V, VDS=5V
GS=10V, ID=7.3A
VGS(th)
ID(ON)
0.7
40
1
A
20
28
24
35
29
48
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
VGS=2.5V, ID=5A
VDS=5V, ID=7.3A
IS=1A,VGS=0V
23.5
34.7
26
mΩ
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.71
1
V
Maximum Body-Diode Continuous Current
2.8
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
900
88
1100
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
65
VGS=0V, VDS=0V, f=1MHz
0.95
1.5
12
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
10
1.8
3.75
3.2
3.5
21.5
2.7
16.8
8
nC
nC
nC
ns
ns
ns
ns
VGS=4.5V, VDS=15V, ID=7.3A
V
GS=10V, VDS=15V, RL=2Ω,
RGEN=6Ω
tD(off)
tf
trr
IF=7.3A, dI/dt=100A/µs
IF=7.3A, dI/dt=100A/µs
21
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 1: June 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4926
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
20
16
12
8
10V
VDS=5V
4.5V
3V
125°C
2.5V
25°C
4
VGS=2V
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
V
DS (Volts)
VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
30
25
20
15
1.8
1.5
1.2
0.9
0.6
ID=6A
VGS=4.5V
V
GS=4.5V
VGS=10V
ID=7.3A
VGS=10V
0
5
10
15
20
-50 -25
0
25 50 75 100 125 150 175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
60
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
55
50
45
40
35
30
ID=7.3A
125°C
125°C
25°C
25
20
1.0E-04
1.0E-05
25°C
15
1.0E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD (Volts)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4926
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
5
4
3
2
1
0
VDS=15V
ID=7.3A
Ciss
Crss
Coss
0
2
4
6
8
10
12
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
Figure 8: Capacitance Characteristics
100.00
10.00
1.00
50
10µs
TJ(Max)=150°C
TA=25°C
100µs
40
30
20
10
0
RDS(ON)
limited
1ms
1s
10s
DC
0.10
TJ(Max)=150°C
TA=25°C
0.01
0.0001 0.001 0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
D=Ton/T
G
0.01
TJ,PK=TA+PDM.ZθJA.RθJA
Ton
RθJA=62.5°C/W
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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