AO4932 [AOS]
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor; 非对称双N沟道增强型场效应晶体管
| 型号： | AO4932 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总8页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4932
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
TM
SRFET
General Description
Features
FET1
The AO4932 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A monolithically integrated Schottky diode in
parallel with the synchronous MOSFET to boost
efficiency further. Standard Product AO4932 is Pb-free
(meets ROHS & Sony 259 specifications).
FET2
VDS(V) = 30V
ID=9A
VDS (V) = 30V
ID = 9A
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
R
DS(ON) < 15.8mΩ
DS(ON) < 19.6mΩ
<15.8mΩ
<23mΩ
R
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max FET1
Max FET2
Units
VDS
Drain-Source Voltage
30
30
±20
9.0
V
VGS
Gate-Source Voltage
Continuous Drain
Current AF
Pulsed Drain Current B
Avalanche Current C
±12
9.0
V
TA=25°C
TA=70°C
A
IDSM
IDM
7.2
7.2
40
40
A
A
IAR
16
16
Repetitive avalanche energy L=0.3mH C
EAR
38
38
mJ
TA=25°C
2.0
2.0
PDSM
W
Power Dissipation
TA=70°C
1.3
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
-55 to 150
°C
Thermal Characteristics FET1
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
48
Max
62.5
90
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
RθJL
Steady-State
Steady-State
74
32
40
Thermal Characteristics FET2
Parameter
Symbol
Typ
48
Max
62.5
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
RθJL
Steady-State
Steady-State
74
Maximum Junction-to-Lead C
32
40
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4932
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=1mA, VGS=0V
VDS=30V, VGS=0V
30
V
0.01
5
0.1
10
IDSS
Zero Gate Voltage Drain Current
mA
TJ=125°C
TJ=125°C
µA
V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
0.1
2.4
VGS(th)
ID(ON)
V
DS=VGS ID=250µA
1.5
40
1.8
VGS=4.5V, VDS=5V
A
V
V
GS=10V, ID=9A
GS=4.5V, ID=7A
13
20.2
16
15.8
25.2
19.6
mΩ
RDS(ON)
Static Drain-Source On-Resistance
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=9A
IS=1A,VGS=0V
64
0.4
0.6
4.5
V
Maximum Body-Diode + Schottky Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1450
224
92
1885
3.0
pF
pF
pF
Ω
V
V
GS=0V, VDS=15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
1.6
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
24
12.0
3.9
4.2
5.5
4.7
24.0
4.0
10
31
16
Qg(4.5V)
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=15V, ID=9A
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=15V, RL=1.7Ω,
R
GEN=3Ω
tD(off)
tf
trr
IF=9A, dI/dt=300A/µs
IF=9A, dI/dt=300A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
12
ns
Qrr
6.8
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
F. The current rating is based on the t≤ 10s thermal resistance rating.
Rev 2: June 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4932
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
30
10V
VDS=5V
4.5V
4V
25
20
15
10
5
60
40
20
0
3.5V
VGS=3V
125°
25°C
3
0
0
1
2
3
4
5
1
1.5
2
2.5
3.5
4
VDS (Volts)
V
GS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
20
17
14
11
8
2
VGS=10V
ID=9A
VGS=4.5V
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=7A
VGS=10V
0.8
0
5
10
15
20
25
30
0
30
60
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
90
120
150
180
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
45
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
40
35
30
25
20
15
10
5
ID=9A
125°C
25°C
125°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4932
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
2000
1500
1000
500
10
8
Ciss
VDS=15V
ID=9A
6
4
Crss
2
Coss
0
0
0
5
10
15
20
25
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
50
40
30
20
10
0
10µs
100µ
TJ(Max)=175°C
TC=25°C
RDS(ON)
limited
1ms
DC
1.0
0.1
0.0
10ms
TJ(Max)=150°C
TA=25°C
0.1
1
10
100
0.0001 0.001
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
D=Ton/T
0.01
T
J,PK=TA+PDM.ZθJA.RθJA
Ton
T
Single Pulse
RθJA=62.5°C/W
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4932
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1
0.9
20A
1.0E-02
0.8
VDS=24V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.0E-03
1.0E-04
1.0E-05
1.0E-06
VDS=12V
10A
5A
IS=1A
0
50
100
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
150
200
0
50
100
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
Junction Temperature
30
25
20
15
10
5
12
10
8
12
3
di/dt=800A/us
di/dt=800A/us
125ºC
125ºC
10
8
2.5
2
trr
25ºC
25ºC
6
1.5
1
6
Qrr
Irm
125ºC
25ºC
4
4
25ºC
S
2
0.5
0
2
125ºC
0
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Is (A)
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
25
10
8
15
12
9
2.5
Is=20A
125ºC
20
15
10
5
2
Is=20A
125ºC
25ºC
6
1.5
1
25ºC
125º
trr
4
6
25ºC
2
Qrr
Irm
25ºC
3
0.5
125ºC
S
0
0
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A)
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4932
FET2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±20V
100
2.3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1.3
40
1.7
VGS=10V, VDS=5V
A
V
GS=10V, ID=9A
13
19
15.8
23
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
mΩ
S
VGS=4.5V, ID=7A
VDS=5V, ID=9A
IS=1A,VGS=0V
18.6
23
23
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.75
1
3
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
955
145
112
0.5
1250
0.85
pF
pF
pF
Ω
V
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
GS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
17
9
22
nC
nC
nC
nC
ns
Qg(4.5V)
11.7
V
GS=10V, VDS=15V, ID=9A
Qgs
Qgd
tD(on)
tr
3.4
4.7
5
VGS=10V, VDS=15V, RL=1.7Ω,
GEN=3Ω
6
ns
R
tD(off)
tf
19
4.5
16.7
6.7
ns
ns
trr
IF=9A, dI/dt=100A/µs
IF=9A, dI/dt=100A/µs
20
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
F. The current rating is based on the t≤ 10s thermal resistance rating.
Rev 2: June 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4932
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
45
40
35
30
25
20
15
10
5
35
28
21
14
7
10V
4.5V
4V
VDS=5V
125°C
3.5V
25°C
VGS=3V
0
0
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
VDS (Volts)
VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
26
24
22
20
18
16
14
12
10
1.6
1.4
1.2
1
VGS=10V
ID=9A
VGS=4.5V
VGS=4.5V
ID=7A
VGS=10V
0.8
0
5
10
15
20
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
I
D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
40
30
20
10
ID=9A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4932
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
1250
1000
750
500
250
0
10
8
VDS=15V
ID=9A
Ciss
6
4
Coss
2
Crss
0
0
4
8
12
16
20
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
DS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
50
10µs
40
30
20
10
0
100µs
RDS(ON)
limited
1ms
TJ(Max)=150°C
TA=25°C
10ms
DC
TJ(Max)=150°C
TA=25°C
0.1
0.0
0.1
1
10
100
0.0001 0.001
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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