AO4932 [FREESCALE]
Asymmetric Dual N-Channel MOSFET; 非对称双N沟道MOSFET
| 型号： | AO4932 |
| 厂家： | 
Freescale |
| 描述： | Asymmetric Dual N-Channel MOSFET |
| 文件： | 总9页 (文件大小：465K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4932
Asymmetric Dual N-Channel MOSFET
General Description
The AO4932 uses advanced trench technology to provide
excellent R
DS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A
the synchronous MOSFET to boost efficiency further.
monolithically integrated Schottky diode in parallel with
Features
FET1(N-Channel)
FET2(N-Channel)
VDS= 30V
30V
ID= 11A (VGS=10V)
RDS(ON)
8A (VGS=10V)
RDS(ON)
< 12.5mꢀ (VGS=10V)
< 15mꢀ (VGS=4.5V)
< 19mꢀ (VGS=10V)
< 23mꢀ (VGS=4.5V)
SRFETTM
Soft Recovery MOSFET:
D1
D2
Top View
Integrated Schottky Diode
D2
G2
D2
S1
S2/D1
S2/D1
S2/D1
G1
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max FE1
Max FET2
Units
Drain-Source Voltage
VDS
30
±12
11
9
30
±20
8
V
V
Gate-Source Voltage
VGS
TA=25°C
TA=70°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C
ID
6.5
40
19
18
2
A
IDM
60
15
11
2
IAS, IAR
EAS, EAR
A
Avalanche energy L=0.1mH C
mJ
TA=25°C
PD
W
°C
Power Dissipation B
TA=70°C
1.3
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
48
Max
62.5
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Steady-State
Steady-State
74
RθJL
32
40
1/9
www.freescale.net.cn
AO4932
Asymmetric Dual N-Channel MOSFET
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
0.5
500
100
2.1
IDSS
Zero Gate Voltage Drain Current
mA
TJ=125°C
TJ=125°C
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=11A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
nA
V
VGS(th)
ID(ON)
1.1
60
1.65
A
10
15
12
75
0.4
12.5
18
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=9A
VDS=5V, ID=11A
IS=1A,VGS=0V
15
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.7
4
V
Maximum Body-Diode + Schottky Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
930
90
1170
128
89
1400
170
125
2.1
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
45
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=11A
VGS=10V, VDS=15V, RL=1.4Ω,
0.7
1.4
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
16
7
20
8.7
3.2
3
24
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
10.5
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6
2.4
23
4
ns
R
GEN=3Ω
tD(off)
tf
ns
ns
trr
IF=11A, dI/dt=500A/µs
IF=11A, dI/dt=500A/µs
5.5
5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
7
8.5
8
ns
Qrr
nC
6.5
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2/9
www.freescale.net.cn
AO4932
Asymmetric Dual N-Channel MOSFET
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
30
25
20
15
10
5
35
30
25
20
15
10
5
10V
VDS=5V
4.5V
3V
2.75V
2.5V
125°C
25°C
VGS=2.25V
4
0
0
0
1
2
3
5
1.5
1.8
2.1
2.4
2.7
3
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
14
1.8
1.6
1.4
1.2
1
VGS=10V
ID=11A
VGS=4.5V
12
10
8
VGS=4.5V
ID=9A
VGS=10V
6
0.8
5
10
15
20
ID (A)
25
30
0
25
50
75
100
125
150
18
175
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25
20
15
10
5
1.0E+02
1.0E+01
ID=11A
125°C
1.0E+00
25°C
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
3/9
www.freescale.net.cn
AO4932
Asymmetric Dual N-Channel MOSFET
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
1200
900
600
300
0
VDS=15V
ID=11A
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
VDS (Volts)
20
25
30
0
5
10
Qg (nC)
15
20
25
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0
1000
100
10
TA=25°C
10µs
RDS(ON)
limited
10.0
1.0
0.1
0.0
100µs
1ms
10ms
10s
TJ(Max)=150°C
TA=25°C
DC
1
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
RθJA=90°C/W
PD
0.01
0.001
Ton
T
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
1000
4/9
www.freescale.net.cn
AO4932
Asymmetric Dual N-Channel MOSFET
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
20A
10A
VDS=30V
5A
VDS=15V
IS=1A
0
50
100
Temperature (°C)
150
200
0
50
100
Temperature (°C)
150
200
Figure 13: Diode Forward voltage vs. Junction
Temperature
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
12
10
8
12
8
6
4
2
0
3
di/dt=800A/µs
di/dt=800A/µs
10
8
125ºC
2.5
2
125ºC
25ºC
25ºC
trr
6
6
1.5
1
Qrr
125ºC
4
4
125ºC
S
Irm
2
2
0.5
0
25ºC
25ºC
0
0
0
5
10
15
IS (A)
20
25
30
0
5
10
15
20
25
30
IS (A)
Figure 14: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Figure 15: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
10
8
10
12
10
8
3
Is=20A
125ºC
8
Is=20A
2.5
2
125ºC
25ºC
6
Qrr
6
4
2
0
25ºC
6
1.5
1
trr
4
125ºC
125ºC
4
S
2
2
0.5
Irm
25ºC
25ºC
0
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 16: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Figure 17: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
5/9
www.freescale.net.cn
AO4932
Asymmetric Dual N-Channel MOSFET
FET2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
V
DS=0V, VGS= ±16V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
2.4
µA
V
VGS(th)
ID(ON)
V
V
V
DS=VGS ID=250µA
GS=10V, VDS=5V
GS=10V, ID=8A
1.2
40
1.8
A
15.5
21
19
25
23
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
V
V
GS=4.5V, ID=4A
DS=5V, ID=8A
18.6
30
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
0.75
1
V
Maximum Body-Diode Continuous Current
2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
600
77
740
110
82
888
145
115
1.7
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
50
VGS=0V, VDS=0V, f=1MHz
0.5
1.1
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12
6
15
7.5
2.5
3
18
9
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=8A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
2
3
2
5
5
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
3.5
19
3.5
ns
tD(off)
tf
ns
ns
trr
IF=8A, dI/dt=500A/µs
IF=8A, dI/dt=500A/µs
6
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
8
10
22
ns
Qrr
14
nC
18
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
6/9
www.freescale.net.cn
AO4932
Asymmetric Dual N-Channel MOSFET
FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
10V
VDS=5V
4V
3.5V
3V
5V
125°C
VGS=2.5V
25°C
0
0
1
1.5
2
2.5
VGS(Volts)
3
3.5
4
0
1
2
3
4
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
30
25
20
15
10
1.6
1.4
1.2
1
VGS=10V
ID=8A
VGS=4.5V
VGS=4.5V
ID=4A
VGS=10V
0.8
0
5
10
ID (A)
15
20
0
25
50
75
100
125
150
18
175
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
40
1.0E+02
1.0E+01
ID=8A
35
30
25
20
15
10
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
25°C
25°C
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS (Volts)
-VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
7/9
www.freescale.net.cn
AO4932
Asymmetric Dual N-Channel MOSFET
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
1000
800
600
400
200
0
VDS=15V
ID=8A
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
VDS (Volts)
20
25
30
0
3
6
9
12
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100.0
10.0
1.0
TA=25°C
10µs
RDS(ON)
100µs
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
10s
DC
0.0
1
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
RθJA=90°C/W
0.1
0.01
PD
Ton
T
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
1000
8/9
www.freescale.net.cn
AO4932
Asymmetric Dual N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
9/9
www.freescale.net.cn
相关型号：
©2020 ICPDF网 联系我们和版权申明