AO4918A [AOS]
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor; 非对称双N沟道增强型场效应晶体管
| 型号： | AO4918A |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总8页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4918A
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
Features
Q1
Q2
The AO4918A uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further.AO4918A is Pb-free (meets ROHS
& Sony 259 specifications). AO4918AL is a Green
Product ordering option. AO4918A and AO4918AL
are electrically identical.
VDS (V) = 30V
VDS(V) = 30V
ID = 9.3A
ID=8.5A
R
DS(ON) < 14.5mΩ
<18mΩ
<27mΩ
(VGS = 10V)
(VGS = 4.5V)
RDS(ON) < 16mΩ
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
D1
S1
D2
K
A
1
2
3
4
8
7
6
5
D2
D2
G1
G2
Q2
Q1
D1/S2/K
D1/S2/K
D1/S2/K
S1/A
G1
G2
S2
SOIC-8
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
Max Q1
Max Q2
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A
30
30
V
VGS
±12
9.3
7.4
40
±20
8.5
V
A
TA=25°C
TA=70°C
ID
6.7
Pulsed Drain CurrentB
IDM
30
TA=25°C
TA=70°C
2
2
PD
W
Power Dissipation
1.28
1.28
-55 to 150
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Parameter
Symbol
Maximum Schottky
Units
VDS
Reverse Voltage
30
3
V
Continuous Forward
Current A
Pulsed Diode Forward CurrentB
TA=25°C
TA=70°C
IF
2.2
A
IFM
20
2
TA=25°C
PD
W
Power DissipationA
TA=70°C
1.28
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Alpha & Omega Semiconductor, Ltd.
AO4918A
Parameter: Thermal Characteristics MOSFET Q1
Symbol
Typ
53
Max
62.5
110
40
Units
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
81.9
30.5
Steady-State
°C/W
Maximum Junction-to-Lead C
Steady-State
RθJL
Parameter: Thermal Characteristics MOSFET Q2
Symbol
Typ
53
Max
62.5
110
40
Units
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
81.9
30.5
Steady-State
°C/W
Maximum Junction-to-Lead C
Steady-State
RθJL
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
50.4
86
62.5
110
40
t ≤ 10s
RθJA
RθJL
Maximum Junction-to-Ambient A
Steady-State
°C/W
Maximum Junction-to-Lead C
Steady-State
26.6
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward
drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip
separately.
Rev 0 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4918A
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
IDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
VR=30V
30
V
0.007 0.05
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
VR=30V, TJ=125°C
VR=30V, TJ=150°C
mA
3.2
12
10
20
100
2
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
0.6
40
1.1
V
GS=4.5V, VDS=5V
GS=10V, ID=9.3A
A
V
11.7 14.5
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
15.4
13.1
37
19
16
VGS=4.5V, ID=8.8A
VDS=5V, ID=9.3A
IS=1A
gFS
VSD
IS
Forward Transconductance
30
S
V
A
Diode+Schottky Forward Voltage
0.46
0.5
3.5
Maximum Body-Diode+Schottky Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3740 4488 pF
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance (FET + Schottky)
Reverse Transfer Capacitance
Gate resistance
295
186
0.86
pF
pF
Ω
VGS=0V, VDS=0V, f=1MHz
1.1
37
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
30.5
4.5
nC
nC
nC
ns
ns
ns
ns
ns
nC
V
V
GS=10V, VDS=15V, ID=9.3A
Gate Source Charge
Gate Drain Charge
8.5
Turn-On DelayTime
6
9
Turn-On Rise Time
GS=10V, VDS=15V, RL=1.6Ω,
8.2
12
75
15
28
16
RGEN=3Ω
tD(off)
tf
Turn-Off DelayTime
54.5
10.5
23.5
13.3
Turn-Off Fall Time
trr
IF=9.3A, dI/dt=100A/µs
IF=9.3A, dI/dt=100A/µs
Body Diode + Schottky Reverse Recovery Time
Body Diode + Schottky Reverse Recovery Charge
Qrr
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any
given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance
and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
Rev 0 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4918A
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
0
30
25
20
15
10
5
10V
VDS=5V
125°C
4.5V
2.5V
VGS=2V
25°C
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
VGS (Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
16
15
14
13
12
11
10
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=4.5V
VGS=10V
ID=9.3A
VGS=10V
0.8
0
5
10
15
20
25
30
0
25
50
75
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
ID=9.3A
125°C
25
20
15
10
5
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 5: On resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
(Note F)
Alpha Omega Semiconductor, Ltd.
AO4918A
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
5
f=1MHz
VGS=0V
VDS=15V
Ciss
ID=9.3A
4
3
1000
2
1
Crss
0
100
0
5
10
15
20
25
30
35
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
40
30
20
10
0
TJ(Max)=150°C, TA=25°C
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10µs
100µs
1ms
10.0
1.0
10ms
0.1s
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
T
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
AO4918A
Q2 Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=8.5A
100
3
nA
V
VGS(th)
ID(ON)
1
1.7
30
A
14.6
22
18
27
27
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
VDS=5V, ID=8.5A
IS=1A
20.6
23
gFS
VSD
IS
Forward Transconductance
Diode Voltage
S
V
A
0.75
1
3
Maximum Body Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
955 1250 pF
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
145
pF
pF
Ω
112
0.5 0.85
SWITCHING PARAMETERS
Qg(10V)
Qg
Total Gate Charge
17
9
24
12
nC
nC
nC
nC
ns
Total Gate Charge
VGS=10V, VDS=15V, ID=8.5A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
3.4
4.7
5
Gate Drain Charge
Turn-On DelayTime
6.5
7.5
25
6
Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
6
ns
tD(off)
tf
Turn-Off DelayTime
19
4.5
16.7
6.7
ns
Turn-Off Fall Time
ns
trr
IF=8.5A, dI/dt=100A/µs
IF=8.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
21
10
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 0 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4918A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
4V
32
10V
25
20
15
10
5
VDS=5V
28
24
20
16
12
8
4.5V
3.5V
125°C
25°C
VGS=3V
4
0
0
3
0
1
2
3
4
5
1.5
2
2.5
3.5
4
4.5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
26
24
22
20
18
16
14
12
10
1.6
1.4
1.2
1
VGS=10V
ID=8.5A
VGS=4.5V
VGS=4.5V
VGS=10V
0.8
0
5
10
D (A)
15
20
0
25
50
75
100
125
150
175
I
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
40
30
20
10
ID=8.5A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4918A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
8
VDS=15V
ID=8.5A
1250
1000
750
500
250
0
Ciss
6
4
Coss
2
Crss
0
0
4
8
12
16
20
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
DS (Volts)
Figure 8: Capacitance Characteristics
100.0
50
TJ(Max)=150°C
TA=25°C
40
30
20
10
0
10µs
100µs
RDS(ON)
10.0 limited
1ms
10ms
0.1s
1.0
1s
10s
DC
0.1
0.1
0.001
0.01
0.1
1
10
100
1000
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
PD
0.1
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
相关型号：
©2020 ICPDF网 联系我们和版权申明