AO4494 [AOS]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AO4494 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4494
30V N-Channel MOSFET
General Description
Product Summary
VDS (V) = 30V
ID = 18A
The AO4494 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is for PWM
applications.
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
RDS(ON) < 6.5mΩ
RDS(ON) < 9.5mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
30
±20
18
V
V
VGS
TC=25°C
TC=70°C
Continuous Drain
Current
ID
14
A
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
130
32
A
EAR
51
mJ
TC=25°C
3.1
Power Dissipation B
TC=70°C
PD
W
°C
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
28
59
Max
40
75
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Steady-State
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
RθJL
16
24
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=125°C
TJ=125°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=18A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.5
nA
V
VGS(th)
ID(ON)
1.5
2
130
A
5.4
8.4
7.5
70
6.5
10.1
9.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=16A
VDS=5V, ID=18A
IS=1A,VGS=0V
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.75
1
3
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1270
170
87
1590
240
145
1.5
1900
310
200
2.3
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
0.8
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
24
12
30
15
36
18
6.2
11
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=18A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4.2
4.7
5.2
7.8
6.7
3.5
22.5
4
V
GS=10V, VDS=15V, RL=0.83Ω,
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=18A, dI/dt=500A/µs
IF=18A, dI/dt=500A/µs
22
19
28
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
34
30
ns
Qrr
24
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
Rev1: Nov. 2010
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
120
100
80
100
80
60
40
20
0
10V
5V
VDS=5V
6V
7V
4.5V
4V
60
3.5V
VGS=3V
4
40
125°C
25°C
4
20
0
0
1
2
3
5
6
0
1
2
3
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
12
10
8
1.8
1.6
1.4
1.2
1
VGS=10V
ID=18A
VGS=4.5V
6
VGS=4.5V
ID=16A
VGS=10V
4
0.8
2
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
25
20
15
10
5
1.0E+02
1.0E+01
ID=18A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
V
SD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2200
2000
1800
1600
1400
1200
1000
800
10
Ciss
VDS=15V
ID=18A
8
6
4
600
Coss
2
400
200
Crss
0
0
0
5
10
15
Qg (nC)
20
25
30
0
5
10
15
VDS (Volts)
20
25
30
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
90.00
80.00
70.00
60.00
50.00
40.00
30.00
20.00
1000.0
100.0
10.0
1.0
TA=25°C
RDS(ON)
10µs
TA=100°C
100µs
TA=150°C
1ms
TA=125°C
10ms
100ms
10s
TJ(Max)=150°C
TA=25°C
0.1
DC
0.0
0.1
1
10
100
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
VDS (Volts)
Figure 12: Single Pulse Avalanche capability
(Note C)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F
)
1000
TA=25°C
100
10
1
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
1
0.1
PD
0.01
0.001
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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