AO4498 [FREESCALE]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AO4498 |
| 厂家： | 
Freescale |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：389K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4498
30V N-Channel MOSFET
General Description
The AO4498 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON)
. This device is ideal for load switch and battery protection applications.
Features
VDS (V) = 30V
ID = 18A
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
RDS(ON) < 5.5mΩ
RDS(ON) < 7.5mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
A
TC=25°C
TC=70°C
18
Continuous Drain
Current
ID
14
Pulsed Drain Current C
Avalanche Current C
IDM
IAR
140
42
A
Repetitive avalanche energy L=0.1mH C
EAR
88
3.1
mJ
TC=25°C
Power Dissipation B
TC=70°C
PD
W
°C
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Steady-State
Steady-State
59
75
RθJL
16
24
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AO4498
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
36.5
V
VDS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2.5
nA
V
VGS(th)
ID(ON)
1.3
1.8
140
A
V
GS=10V, ID=18A
4.6
6.6
6
5.5
8
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=16A
VDS=5V, ID=18A
IS=1A,VGS=0V
7.5
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
53
0.7
1
4
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1910
316
227
1.4
2300
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.7
2.1
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
37
18
4.8
11
8.1
8.6
29
8
44.5
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=18A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS=10V, VDS=15V, RL=0.83Ω,
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=18A, dI/dt=500A/µs
IF=18A, dI/dt=500A/µs
14
40
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
17
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T=150°C. The SOA curve provides a single pulse ratin g.
Rev 1 : Nov. 2010
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AO4498
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
120
100
80
80
10V
4.5V
VDS=5V
70
60
50
40
30
20
10
0
5V
6V
4V
60
40
VGS=3.5V
125°
25°C
20
0
0
1
2
3
4
5
0
1
2
3
4
5
VGS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
10
8
1.8
1.6
1.4
1.2
1
VGS=10V
ID=18A
VGS=4.5V
VGS=10V
6
4
VGS=4.5V
ID=16A
2
0.8
0
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
14
12
10
8
1.0E+02
1.0E+01
ID=18A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
6
25°C
4
25°C
2
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AO4498
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=15V
ID=18A
2500
2000
1500
1000
500
8
Ciss
6
4
Coss
2
Crss
0
0
0
10
20
Qg (nC)
30
40
0
5
10
15
VDS (Volts)
20
25
30
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
120
100
80
60
40
20
0
1000.0
100.0
10.0
1.0
RDS(ON)
limited
TA=25°C
TA=100°
10µs
100µs
TA=150°
1ms
10ms
100ms
10s
0.1
DC
TJ(Max)=150°C
TA=25°C
TA=125°
0.0
0.1
1
10
100
0.000001
0.00001
0.0001
0.001
VDS (Volts)
Time in avalanche, tA (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 12: Single Pulse Avalanche capability (Note
C)
1000
TJ(Max)=150°C
TA=25°C
100
10
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
4/6
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AO4498
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
1
0.1
PD
0.01
0.001
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
Q
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5/6
AO4498
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+
DUT
Vdd
Vgs
VDC
Rg
-
10%
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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