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AO4498L [AOS]

N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
AO4498L
型号： AO4498L
厂家： ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述：

N-Channel Enhancement Mode Field Effect Transistor
N沟道增强型网络场效晶体管

晶体 晶体管
文件： 总6页 (文件大小：148K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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AO4498L  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4498L combines advanced trench MOSFET  
technology with a low resistance package to provide  
extremely low RDS(ON). This device is ideal for load  
switch and battery protection applications.  
V
DS (V) = 30V  
(VGS = 10V)  
(VGS = 10V)  
(VGS = 4.5V)  
ID = 18A  
RDS(ON) < 5.5mΩ  
RDS(ON) < 7.5mΩ  
- RoHS Compliant  
- Halogen Free  
100% UIS Tested!  
100% R g Tested!  
D
SOIC-8  
D
G
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±20  
18  
V
V
VGS  
TC=25°C  
TC=70°C  
Continuous Drain  
Current  
Pulsed Drain Current C  
Avalanche Current C  
ID  
A
14  
IDM  
IAR  
140  
42  
A
Repetitive avalanche energy L=0.1mH C  
EAR  
88  
3.1  
mJ  
TC=25°C  
Power Dissipation B  
TC=70°C  
PD  
W
2
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t ≤ 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
59  
16  
75  
24  
Steady-State  
Steady-State  
RθJL  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4498L  
Electrical Characteristics (T =25°C unless otherwise noted)  
J
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
BVDSS  
Drain-Source Breakdown Voltage  
ID=250µA, VGS=0V  
30  
36.5  
V
V
DS=30V, VGS=0V  
1
IDSS  
Zero Gate Voltage Drain Current  
µA  
5
TJ=55°C  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
V
DS=0V, VGS= ±20V  
100  
2.5  
nA  
V
VGS(th)  
ID(ON)  
VDS=VGS ID=250µA  
VGS=10V, VDS=5V  
VGS=10V, ID=18A  
1.3  
1.8  
140  
A
4.6  
6.6  
6
5.5  
8
mΩ  
mΩ  
RDS(ON)  
TJ=125°C  
Static Drain-Source On-Resistance  
VGS=4.5V, ID=16A  
VDS=5V, ID=18A  
IS=1A,VGS=0V  
7.5  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
53  
0.7  
S
V
A
1
4
Maximum Body-Diode Continuous Current  
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
1910 2300  
316  
pF  
pF  
pF  
Ω
V
V
GS=0V, VDS=15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
227  
GS=0V, VDS=0V, f=1MHz  
0.7  
1.4  
2.1  
SWITCHING PARAMETERS  
Qg(10V)  
Qg(4.5V)  
Qgs  
Total Gate Charge  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
37  
18  
4.8  
11  
8.1  
8.6  
29  
8
44.5  
nC  
nC  
nC  
nC  
ns  
VGS=10V, VDS=15V, ID=18A  
Qgd  
tD(on)  
tr  
tD(off)  
tf  
V
GS=10V, VDS=15V, RL=0.83Ω,  
ns  
RGEN=3Ω  
ns  
ns  
trr  
IF=18A, dI/dt=500A/µs  
14  
40  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
17  
ns  
Qrr  
IF=18A, dI/dt=500A/µs  
2
nC  
A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The value  
A
in any given application depends on the user's specific board design.  
B. The power dissipation P is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.  
D
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep  
initialTJ=25°C.  
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1i2n FR-4 board with  
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.  
Rev 0 : Jul-08  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4498L  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
10V  
4.5V  
VDS=5V  
5V  
6V  
4V  
60  
40  
VGS=3.5V  
125°  
25°C  
20  
0
0
1
2
3
4
5
0
1
2
3
4
5
VGS(Volts)  
VDS (Volts)  
Figure 2: Transfer Characteristics (Note E)  
Fig 1: On-Region Characteristics (Note E)  
10  
8
1.8  
1.6  
1.4  
1.2  
1
VGS=10V  
ID=18A  
VGS=4.5V  
VGS=10V  
6
4
VGS=4.5V  
ID=16A  
2
0.8  
0
0
25  
50  
75  
100  
125  
150  
175  
0
5
10  
15  
20  
25  
30  
ID (A)  
Temperature (°C)  
Figure 3: On-Resistance vs. Drain Current and  
Gate Voltage (Note E)  
Figure 4: On-Resistance vs. Junction Temperature  
(Note E)  
14  
12  
10  
8
1.0E+02  
1.0E+01  
ID=18A  
1.0E+00  
125°C  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
125°C  
6
25°C  
4
25°C  
2
0
0.0  
0.2  
0.4  
0.6  
SD (Volts)  
Figure 6: Body-Diode Characteristics (Note E)  
0.8  
1.0  
1.2  
2
4
6
8
10  
V
V
GS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
(Note E)  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4498L  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
10  
3000  
2500  
2000  
1500  
1000  
500  
VDS=15V  
ID=18A  
8
Ciss  
6
4
Coss  
2
Crss  
0
0
0
10  
20  
Qg (nC)  
30  
40  
0
5
10  
15  
VDS (Volts)  
20  
25  
30  
Figure 7: Gate-Charge Characteristics  
Figure 8: Capacitance Characteristics  
120  
100  
80  
60  
40  
20  
0
1000.0  
100.0  
10.0  
1.0  
RDS(ON)  
limited  
TA=25°C  
TA=100°  
10µs  
100µs  
TA=150°  
1ms  
10ms  
100ms  
10s  
0.1  
DC  
TJ(Max)=150°C  
TA=25°C  
TA=125°  
0.0  
0.1  
1
10  
100  
0.000001  
0.00001  
0.0001  
0.001  
VDS (Volts)  
Time in avalanche, tA (s)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note F)  
Figure 12: Single Pulse Avalanche capability (Note  
C)  
1000  
TJ(Max)=150°C  
TA=25°C  
100  
10  
1
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4498L  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
10  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
D=Ton/T  
J,PK=TA+PDM.ZθJA.RθJA  
RθJA=40°C/W  
T
1
0.1  
PD  
0.01  
0.001  
Single Pulse  
Ton  
T
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)  
Q
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4498L  
Gate Charge Test Circuit & Waveform  
Vgs  
Qg  
10V  
+
VDC  
+
Qgs  
Qgd  
Vds  
VDC  
-
-
DUT  
Vgs  
Ig  
Charge  
Resistive Switching Test Circuit & Waveforms  
RL  
Vds  
Vds  
90%  
+
DUT  
Vdd  
Vgs  
VDC  
Rg  
-
10%  
Vgs  
Vgs  
td(on)  
t
r
td(off)  
t
f
ton  
toff  
Diode Recovery Test Circuit & Waveforms  
Qrr = - Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
trr  
L
Isd  
I F  
Isd  
Vgs  
dI/dt  
I RM  
+
Vdd  
VDC  
Vdd  
-
Vds  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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