AO4600 [FREESCALE]
Complementary Enhancement Mode Field Effect Transistor; 互补增强型场效应晶体管
| 型号： | AO4600 |
| 厂家： | 
Freescale |
| 描述： | Complementary Enhancement Mode Field Effect Transistor |
| 文件： | 总10页 (文件大小：778K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4600
Complementary Enhancement Mode
Field Effect Transistor
General Description
The AO4600 uses advanced trench technology to
and low gate charge. The
provide excellent RDS(ON)
complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO4600L is a Green
Product ordering option. AO4600 and AO4600L are
electrically identical.
Features
n-channel
p-channel
-30V
V
DS (V) = 30V
ID = 6.9A (VGS = 10V) -5A (VGS = -10V)
RDS(ON)
< 27mΩ
< 32mΩ
< 50mΩ
< 49mΩ (VGS =- 10V)
< 64mΩ (VGS =- 4.5V)
< 120mΩ (VGS = -2.5V)
D1
S1
D2
S2
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G1
G2
SOIC-8
p-channel
n-channel
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
Max n-channel
Max p-channel Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A
30
±12
-30
±12
V
V
VGS
TA=25°C
TA=70°C
6.9
-5
A
ID
5.8
-4.2
Pulsed Drain CurrentB
IDM
40
-30
TA=25°C
TA=70°C
2
2
PD
W
Power Dissipation
1.44
-55 to 150
1.44
-55 to 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Typ
Max
62.5
110
40
Units
Maximum Junction-to-AmbientA
48
74
35
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
RθJL
1 / 10
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AO4600
n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
DS=0V, VGS=±12V
DS=VGS ID=250µA
GS=4.5V, VDS=5V
100
1.4
nA
V
VGS(th)
ID(ON)
0.7
25
1
A
VGS=10V, ID=6.9A
22.6
33
27
40
32
50
mΩ
TJ=125°C
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6.0A
VGS=2.5V, ID=5A
27
42
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
DS=5V, ID=5A
12
16
S
V
A
IS=1A
0.71
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
858
110
80
1050
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1.4
2
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
9.6
1.65
3
12
nC
nC
nC
ns
ns
ns
ns
ns
nC
VGS=4.5V, VDS=15V, ID=6.9A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
5.7
13
V
GS=10V, VDS=15V, RL=2.2Ω,
GEN=6Ω
R
tD(off)
tf
Turn-Off DelayTime
Turn-Off Fall Time
37
4.2
15.5
7.9
trr
Body Diode Reverse Recovery time
IF=5A, dI/dt=100A/µs
20
Qrr
Body Diode Reverse Recovery charge IF=5A, dI/dt=100A/µs
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
2 / 10
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AO4600
TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
10V
3V
VDS=5V
4.5V
2.5V
VGS=2V
125°C
1.5
4
25°C
0
0
0
0.5
1
2
2.5
3
0
1
2
3
4
5
V
GS (Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
60
50
40
30
20
10
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
ID=5A
VGS=2.5V
VGS=10V
VGS=4.5V
VGS=2.5V
=4.5V
VGS=10V
0.9
0.8
0
50
100
Temperature ( °C)
150
200
0
5
10
15
20
ID (Amps)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
125°C
60
50
40
30
20
10
ID=5A
125°C
25°C
25°C
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0
2
4
6
8
10
VSD (Volts)
Figure 6: Body diode characteristics
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
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AO4600
TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
5
f=1MHz
VGS=0V
VDS=15V
ID=6.9A
1250
1000
750
500
250
0
4
3
2
1
0
Ciss
Coss
Crss
0
2
4
6
8
10
12
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge characteristics
V
DS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1ms
10ms
0.1s
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
V
DS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
PD
Ton
10
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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AO4600
p-channel MOSFET Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-24V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
±100
-1.4
nA
V
VGS(th)
ID(ON)
-0.7
-25
-1
A
V
GS=-10V, ID=-5A
42.5
49
74
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
S
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
VDS=-5V, ID=-5A
IS=-1A,VGS=0V
54
80
64
120
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
7
11
-0.75
-1
-3
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
952
103
77
1200
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
5.9
30
12
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.5
2
nC
nC
nC
ns
ns
ns
ns
V
GS=-4.5V, VDS=-15V, ID=-5A
3.1
12
4
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=6Ω
tD(off)
tf
37
12
21
13
trr
IF=-5A, dI/dt=100A/µs
IF=-5A, dI/dt=100A/µs
26
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 4 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
5 / 10
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AO4600
TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
10
25
20
15
10
5
VDS=-5V
-10V
-4.5V
8
-3V
6
-2.5V
125°C
4
25°C
VGS=-2V
2
0
0
0
1
2
3
4
5
0
0.5
1
1.5
-VGS(Volts)
2
2.5
3
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
120
100
80
1.6
1.4
1.2
1
ID=-5A
VGS=-4.5V
VGS=-10V
VGS=-2.5V
VGS=-2.5V
ID=-2A
VGS=-4.5V
V=-10V
60
40
20
0.8
0
2
4
6
8
10
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
190
170
150
130
110
90
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-2A
125°C
125°C
70
25°C
50
25°C
30
10
0
2
4
6
8
10
0.0
0.2
0.4
0.6
-VSD (Volts)
0.8
1.0
1.2
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
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AO4600
TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
5
4
3
2
1
0
VDS=-15V
ID=-5A
Ciss
Coss
Crss
0
2
4
6
8
10
12
0
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
TJ(Max)=150°C
TA=25°C
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
0.1s
10ms
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
θJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
R
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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PD-00165
Document No.
rev C
Version
Title
AO4600 Marking Description
SO-8 PACKAGE MARKING DESCRIPTION
Green product
Standard product
NOTE:
LOGO - AOS LOGO
4600
F&A
Y
- PART NUMBER CODE.
- FOUNDRY AND ASSEMBLY LOCATION
- YEAR CODE
W
- WEEK CODE.
L T
- ASSEMBLY LOT CODE
PART NO. DESCRIPTION
CODE
4600
Standard product
Green product
AO4600
4600
AO4600L
8 / 10
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9 / 10
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SO-8 Tape and Reel Data
SO-8 Carrier Tape
SO-8 Reel
SO-8 Tape
Leader / Trailer
& Orientation
10 / 10
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