AO4601 [AOS]
Complementary Enhancement Mode Field Effect Transistor; 互补增强型场效应晶体管
| 型号： | AO4601 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Complementary Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4601
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
VDS (V) = 30V
p-channel
-30V
The AO4601 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs may
be used to form a level shifted high side switch,
and for a host of other applications. Standard
Product AO4601 is Pb-free (meets ROHS & Sony
259 specifications). AO4601L is a Green Product
ordering option. AO4601 and AO4601L are
ID = 4.7A (VGS=10V) -8A (VGS = -20V)
RDS(ON)
RDS(ON)
< 18mΩ (VGS = -20V)
< 55mΩ (VGS=10V)
< 70mΩ (VGS=4.5V)
< 110mΩ (VGS = 2.5V)
< 19mΩ (VGS = -10V)
D1
D2
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G1
G2
S1
S2
SOIC-8
p-channel
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
30
-30
±25
V
V
VGS
±12
TA=25°C
TA=70°C
4.7
-8
Continuous Drain
Current A
Pulsed Drain Current B
A
ID
4
30
-6.9
IDM
-50
TA=25°C
TA=70°C
2
2
PD
W
Power Dissipation
1.44
-55 to 150
1.44
-55 to 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
Typ
52
78
48
50
73
31
Max Units
62.5 °C/W
110 °C/W
60 °C/W
62.5 °C/W
110 °C/W
40 °C/W
Maximum Junction-to-Ambient A
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
RθJL
RθJA
RθJL
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Maximum Junction-to-Lead C
Steady-State
Alpha & Omega Semiconductor, Ltd.
AO4601
n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
DS=VGS ID=250µA
VGS=4.5V, VDS=5V
GS=10V, ID=4A
100
1.4
nA
V
VGS(th)
ID(ON)
V
0.6
10
1
A
V
45
66
55
83
8
55
80
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=4.5V, ID=3A
VGS=2.5V, ID=2A
70
110
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=4A
S
V
A
IS=1A,VGS=0V
0.8
1
Maximum Body-Diode Continuous Current
2.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
390
54.5
41
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
3
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
0.6
1.38
4.34
3.3
1
nC
nC
nC
ns
ns
ns
ns
V
GS=4.5V, VDS=15V, ID=4A
VGS=10V, VDS=15V, RL=3.75Ω,
RGEN=6Ω
tD(off)
tf
21.7
2.1
12
trr
IF=4A, dI/dt=100A/µs
IF=4A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
6.3
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 3 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AO4601
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15
12
9
10V
3V
8
VDS=5V
4.5V
6
2.5V
4
6
125°C
3
2
VGS=2V
25°C
2
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2.5
3
3.5
V
GS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
150
125
100
75
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=2.5V
VGS=10V
VGS=4.5V
V=10V
VGS=2.5V
50
25
0
0.8
0
2
4
6
8
10
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
I
D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
200
150
100
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=2A
125°C
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
0
2
4
V
6
8
10
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
AO4601
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
500
400
300
200
100
0
5
4
3
2
1
0
VDS=15V
ID=4A
Ciss
Coss
Crss
0
1
2
3
4
5
0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
TJ(Max)=150°C
TA=25°C
100.0
10.0
1.0
20
TJ(Max)=150°C
TA=25°C
15
10
5
10µs
RDS(ON)
100µs
1ms
1
0.1
0
0.1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
θJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
R
P
0.1
T
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4601
p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-24V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±25V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
±100
-3
nA
V
VGS(th)
ID(ON)
-1.7
40
-2.5
A
V
GS=-10V, ID=-8A
16
20.5
15
19
25
18
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=-20V, ID=-8A
VGS=-4.5V, ID=-5A
VDS=-5V, ID=-8A
IS=-1A,VGS=0V
33
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
16
21
S
V
A
-0.75
-1
Maximum Body-Diode Continuous Current
-2.6
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2076
503
302
2
pF
pF
pF
Ω
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
39
8
nC
nC
nC
ns
ns
ns
ns
V
GS=-10V, VDS=-15V, ID=-8A
11.4
12.7
7
VGS=-10V, VDS=-15V, RL=1.8Ω,
RGEN=3Ω
tD(off)
tf
25.2
12
trr
IF=-8A, dI/dt=100A/µs
IF=-8A, dI/dt=100A/µs
32
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
26
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 3 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AO4601
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
50
40
30
20
10
0
-8V
-6V
-10V
VDS=-5V
-5.5V
-5V
-4.5V
125°C
VGS=-4V
25°C
4
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4.5
5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
30
25
20
15
10
5
1.4
1.3
1.2
1.1
1
ID=-8A
VGS=-6V
VGS=-10V
V=-10V
VGS=-4.5V
0.9
0.8
0
0
5
10
15
20
25
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
60
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
50
40
30
20
10
0
ID=-8A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
AO4601
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
2500
2000
1500
1000
500
10
VDS=-15V
ID=-8A
8
Ciss
6
Coss
4
Crss
2
0
0
0
5
10
15
20
-Qg (nC)
Figure 7: Gate-Charge Characteristics
25
30
35
40
0
5
10
15
-VDS (Volts)
20
25
30
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
100µs
1ms
RDS(ON)
10ms
1
0.1
0.01
0.1
1
10
100
1000
0.1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
θJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
R
P
0.1
T
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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