AO4601 [AOS]

Complementary Enhancement Mode Field Effect Transistor; 互补增强型场效应晶体管
AO4601
型号: AO4601
厂家: ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述:

Complementary Enhancement Mode Field Effect Transistor
互补增强型场效应晶体管

晶体 晶体管 场效应晶体管
文件: 总7页 (文件大小:305K)
中文:  中文翻译
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AO4601  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
n-channel  
VDS (V) = 30V  
p-channel  
-30V  
The AO4601 uses advanced trench technology  
MOSFETs to provide excellent RDS(ON) and low  
gate charge. The complementary MOSFETs may  
be used to form a level shifted high side switch,  
and for a host of other applications. Standard  
Product AO4601 is Pb-free (meets ROHS & Sony  
259 specifications). AO4601L is a Green Product  
ordering option. AO4601 and AO4601L are  
ID = 4.7A (VGS=10V) -8A (VGS = -20V)  
RDS(ON)  
RDS(ON)  
< 18m(VGS = -20V)  
< 55m(VGS=10V)  
< 70m(VGS=4.5V)  
< 110m(VGS = 2.5V)  
< 19m(VGS = -10V)  
D1  
D2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G1  
G2  
S1  
S2  
SOIC-8  
p-channel  
n-channel  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max n-channel  
Max p-channel  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
-30  
±25  
V
V
VGS  
±12  
TA=25°C  
TA=70°C  
4.7  
-8  
Continuous Drain  
Current A  
Pulsed Drain Current B  
A
ID  
4
30  
-6.9  
IDM  
-50  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power Dissipation  
1.44  
-55 to 150  
1.44  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Symbol  
Device  
Typ  
52  
78  
48  
50  
73  
31  
Max Units  
62.5 °C/W  
110 °C/W  
60 °C/W  
62.5 °C/W  
110 °C/W  
40 °C/W  
Maximum Junction-to-Ambient A  
n-ch  
n-ch  
n-ch  
p-ch  
p-ch  
p-ch  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Steady-State  
Maximum Junction-to-Lead C  
Steady-State  
RθJL  
RθJA  
RθJL  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
Steady-State  
Maximum Junction-to-Lead C  
Steady-State  
Alpha & Omega Semiconductor, Ltd.  
AO4601  
n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
STATIC PARAMETERS  
BVDSS  
Drain-Source Breakdown Voltage  
ID=250µA, VGS=0V  
30  
V
VDS=24V, VGS=0V  
1
5
IDSS  
Zero Gate Voltage Drain Current  
µA  
TJ=55°C  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
VDS=0V, VGS=±12V  
DS=VGS ID=250µA  
VGS=4.5V, VDS=5V  
GS=10V, ID=4A  
100  
1.4  
nA  
V
VGS(th)  
ID(ON)  
V
0.6  
10  
1
A
V
45  
66  
55  
83  
8
55  
80  
mΩ  
TJ=125°C  
RDS(ON)  
Static Drain-Source On-Resistance  
mΩ  
mΩ  
VGS=4.5V, ID=3A  
VGS=2.5V, ID=2A  
70  
110  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
VDS=5V, ID=4A  
S
V
A
IS=1A,VGS=0V  
0.8  
1
Maximum Body-Diode Continuous Current  
2.5  
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
390  
54.5  
41  
pF  
pF  
pF  
V
GS=0V, VDS=15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
VGS=0V, VDS=0V, f=1MHz  
3
SWITCHING PARAMETERS  
Qg  
Qgs  
Qgd  
tD(on)  
tr  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
0.6  
1.38  
4.34  
3.3  
1
nC  
nC  
nC  
ns  
ns  
ns  
ns  
V
GS=4.5V, VDS=15V, ID=4A  
VGS=10V, VDS=15V, RL=3.75,  
RGEN=6Ω  
tD(off)  
tf  
21.7  
2.1  
12  
trr  
IF=4A, dI/dt=100A/µs  
IF=4A, dI/dt=100A/µs  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
Qrr  
6.3  
nC  
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value  
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.  
B: Repetitive rating, pulse width limited by junction temperature.  
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA  
curve provides a single pulse rating.  
Rev 3 : Sept 2005  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
AO4601  
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
10  
15  
12  
9
10V  
3V  
8
VDS=5V  
4.5V  
6
2.5V  
4
6
125°C  
3
2
VGS=2V  
25°C  
2
0
0
0
1
2
3
4
5
0
0.5  
1
1.5  
2.5  
3
3.5  
V
GS(Volts)  
V
DS (Volts)  
Figure 2: Transfer Characteristics  
Fig 1: On-Region Characteristics  
150  
125  
100  
75  
1.8  
1.6  
1.4  
1.2  
1
VGS=4.5V  
VGS=2.5V  
VGS=10V  
VGS=4.5V  
V
GS
=10V  
VGS=2.5V  
50  
25  
0
0.8  
0
2
4
6
8
10  
0
25  
50  
75  
Temperature (°C)  
Figure 4: On-Resistance vs. Junction Temperature  
100  
125  
150  
175  
I
D (A)  
Figure 3: On-Resistance vs. Drain Current and Gate  
Voltage  
200  
150  
100  
50  
1.0E+01  
1.0E+00  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
1.0E-06  
ID=2A  
125°C  
125°C  
25°C  
25°C  
0
0.0  
0.2  
0.4  
0.6  
SD (Volts)  
Figure 6: Body-Diode Characteristics  
0.8  
1.0  
1.2  
0
2
4
V
6
8
10  
V
GS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
Alpha and Omega Semiconductor, Ltd.  
AO4601  
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
600  
500  
400  
300  
200  
100  
0
5
4
3
2
1
0
VDS=15V  
ID=4A  
Ciss  
Coss  
Crss  
0
1
2
3
4
5
0
5
10  
15  
VDS (Volts)  
Figure 8: Capacitance Characteristics  
20  
25  
30  
Qg (nC)  
Figure 7: Gate-Charge Characteristics  
TJ(Max)=150°C  
TA=25°C  
100.0  
10.0  
1.0  
20  
TJ(Max)=150°C  
TA=25°C  
15  
10  
5
10µs  
RDS(ON)  
limited  
100µs  
1ms  
10ms  
1s  
0.1  
10s  
1
DC  
0.1  
0
0.1  
10  
100  
0.001  
0.01  
0.1  
1
10  
100  
1000  
V
DS (Volts)  
Pulse Width (s)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note E)  
Figure 10: Single Pulse Power Rating Junction-to-  
Ambient (Note E)  
10  
1
D=Ton/T  
J,PK=TA+PDM.ZθJA.RθJA  
θJA=62.5°C/W  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
T
R
P
D  
0.1  
T
on  
T
Single Pulse  
0.001  
0.01  
0.00001  
0.0001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance  
Alpha & Omega Semiconductor, Ltd.  
AO4601  
p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
STATIC PARAMETERS  
BVDSS  
Drain-Source Breakdown Voltage  
ID=-250µA, VGS=0V  
-30  
V
VDS=-24V, VGS=0V  
-1  
-5  
IDSS  
Zero Gate Voltage Drain Current  
µA  
TJ=55°C  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
VDS=0V, VGS=±25V  
VDS=VGS ID=-250µA  
VGS=-10V, VDS=-5V  
±100  
-3  
nA  
V
VGS(th)  
ID(ON)  
-1.7  
40  
-2.5  
A
V
GS=-10V, ID=-8A  
16  
20.5  
15  
19  
25  
18  
mΩ  
TJ=125°C  
RDS(ON)  
Static Drain-Source On-Resistance  
mΩ  
mΩ  
VGS=-20V, ID=-8A  
VGS=-4.5V, ID=-5A  
VDS=-5V, ID=-8A  
IS=-1A,VGS=0V  
33  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
16  
21  
S
V
A
-0.75  
-1  
Maximum Body-Diode Continuous Current  
-2.6  
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
2076  
503  
302  
2
pF  
pF  
pF  
V
GS=0V, VDS=-15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
VGS=0V, VDS=0V, f=1MHz  
SWITCHING PARAMETERS  
Qg  
Qgs  
Qgd  
tD(on)  
tr  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
39  
8
nC  
nC  
nC  
ns  
ns  
ns  
ns  
V
GS=-10V, VDS=-15V, ID=-8A  
11.4  
12.7  
7
VGS=-10V, VDS=-15V, RL=1.8,  
RGEN=3Ω  
tD(off)  
tf  
25.2  
12  
trr  
IF=-8A, dI/dt=100A/µs  
IF=-8A, dI/dt=100A/µs  
32  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
Qrr  
26  
nC  
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value  
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.  
B: Repetitive rating, pulse width limited by junction temperature.  
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA  
curve provides a single pulse rating.  
Rev 3 : Sept 2005  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
AO4601  
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
-8V  
-6V  
-10V  
VDS=-5V  
-5.5V  
-5V  
-4.5V  
125°C  
VGS=-4V  
25°C  
4
0
0
1
2
3
4
5
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4.5  
5
-VGS(Volts)  
Figure 2: Transfer Characteristics  
-VDS (Volts)  
Fig 1: On-Region Characteristics  
30  
25  
20  
15  
10  
5
1.4  
1.3  
1.2  
1.1  
1
ID=-8A  
VGS=-6V  
VGS=-10V  
V
GS
=-10V  
VGS=-4.5V  
0.9  
0.8  
0
0
5
10  
15  
20  
25  
0
25  
50  
75  
Temperature (°C)  
Figure 4: On-Resistance vs. Junction Temperature  
100  
125  
150  
175  
-ID (A)  
Figure 3: On-Resistance vs. Drain Current and Gate  
Voltage  
60  
1.0E+01  
1.0E+00  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
1.0E-06  
50  
40  
30  
20  
10  
0
ID=-8A  
125°C  
125°C  
25°C  
25°C  
0.0  
0.2  
0.4  
0.6  
-VSD (Volts)  
Figure 6: Body-Diode Characteristics  
0.8  
1.0  
1.2  
2
4
6
8
10  
-VGS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
Alpha and Omega Semiconductor, Ltd.  
AO4601  
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
3000  
2500  
2000  
1500  
1000  
500  
10  
VDS=-15V  
ID=-8A  
8
Ciss  
6
Coss  
4
Crss  
2
0
0
0
5
10  
15  
20  
-Qg (nC)  
Figure 7: Gate-Charge Characteristics  
25  
30  
35  
40  
0
5
10  
15  
-VDS (Volts)  
20  
25  
30  
Figure 8: Capacitance Characteristics  
100.0  
10.0  
1.0  
40  
30  
20  
10  
0
TJ(Max)=150°C  
TA=25°C  
TJ(Max)=150°C  
TA=25°C  
10µs  
100µs  
1ms  
RDS(ON)  
limited  
10ms  
0.1s  
1s  
10s  
1
DC  
0.1  
0.01  
0.1  
1
10  
100  
1000  
0.1  
10  
100  
Pulse Width (s)  
-VDS (Volts)  
Figure 10: Single Pulse Power Rating Junction-to-  
Ambient (Note E)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note E)  
10  
1
D=Ton/T  
J,PK=TA+PDM.ZθJA.RθJA  
θJA=62.5°C/W  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
T
R
P
D  
0.1  
T
on  
T
Single Pulse  
0.001  
0.01  
0.00001  
0.0001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance  
Alpha & Omega Semiconductor, Ltd.  

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