AO4603 [AOS]
Transistor;
| 型号： | AO4603 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总7页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4603
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
VDS (V) = 30V
ID = 4.7A (VGS=10V)
RDS(ON)
p-channel
-30V
The AO4603 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs
may be used to form a level shifted high side
switch, and for a host of other applications.
Standard product AO4603 is Pb-free (meets
ROHS & Sony 259 specifications). AO4603L is
a Green Product ordering option. AO4603 and
AO4603L are electrically identical.
-5.8A (VGS = -10V)
RDS(ON)
< 55mΩ (VGS=10V)
< 70mΩ (VGS=4.5V)
< 110mΩ (VGS = 2.5V)
< 35mΩ (VGS = -10V)
< 58mΩ (VGS = -4.5V)
D1
D2
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
S2
S1
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
30
-30
±20
V
V
VGS
±12
TA=25°C
TA=70°C
4.7
-5.8
Continuous Drain
Current A
Pulsed Drain Current B
A
ID
4
30
-4.9
IDM
-40
TA=25°C
TA=70°C
2
2
PD
W
Power Dissipation
1.44
-55 to 150
1.44
-55 to 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
Typ
52
78
48
50
73
31
Max Units
62.5 °C/W
110 °C/W
50 °C/W
62.5 °C/W
110 °C/W
35 °C/W
Maximum Junction-to-Ambient A
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
RθJL
RθJA
RθJL
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Maximum Junction-to-Lead C
Steady-State
Alpha & Omega Semiconductor, Ltd.
AO4603
n-channel MOSFET Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
100
1.4
nA
V
VGS(th)
ID(ON)
0.6
10
1
A
V
GS=10V, ID=4A
45
55
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
S
VGS=4.5V, ID=3A
VGS=2.5V, ID=2A
VDS=5V, ID=4A
IS=1A,VGS=0V
55
83
8
70
110
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.8
1
V
Maximum Body-Diode Continuous Current
2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
390
54.5
41
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
V
GS=0V, VDS=0V, f=1MHz
3
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
0.6
1.38
4.34
3.3
1
nC
nC
nC
ns
ns
ns
ns
GS=4.5V, VDS=15V, ID=4A
VGS=10V, VDS=15V, RL=3.75Ω,
RGEN=6Ω
tD(off)
tf
21.7
2.1
12
trr
IF=4A, dI/dt=100A/µs
IF=4A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
6.3
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4603
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS N-Channel
10
8
15
12
9
10V
3V
VDS=5V
4.5V
6
2.5V
4
6
125°C
3
2
VGS=2V
25°C
2
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2.5
3
3.5
V
GS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
150
125
100
75
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=2.5V
VGS=10V
VGS=4.5V
VGS=2.5V
50
25
VGS=10V
0
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
200
150
100
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=2A
125°C
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD (Volts)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4603
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS N-Channel
600
500
400
300
200
100
0
5
4
3
2
1
0
VDS=15V
ID=4A
Ciss
Coss
Crss
0
1
2
3
4
5
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
20
RDS(ON)
limited
TJ(Max)=150°C
TJ(Max)=150°C
TA=25°C
TA=25°C
15
10
5
10µs
100µs
1ms
0.1s
10ms
1s
10s
DC
0.1
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4603
p-channel MOSFET Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-24V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
V
DS=0V, VGS=±20V
DS=VGS ID=-250µA
GS=-10V, VDS=-5V
GS=-10V, ID=-5A
±100
-2.2
nA
V
VGS(th)
ID(ON)
-1.2
40
-1.8
A
29
40
39
38
63
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
V
V
GS=-4.5V, ID=-5A
DS=-5V, ID=-10A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
IS=-1A,VGS=0V
-0.75
-1
Maximum Body-Diode Continuous Current
-4.2
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
920
190
122
3.6
pF
pF
pF
Ω
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
2.4
4.5
9.3
7.6
5.2
21.6
8
nC
nC
nC
ns
ns
ns
ns
V
V
GS=-10V, VDS=-15V, ID=-7.5A
GS=-10V, VDS=-15V, RL=2Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=-7.5A, dI/dt=100A/µs
IF=-7.5A, dI/dt=100A/µs
20
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
8.8
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in anyagivenapplicationdependsontheuser'sspecificboarddesign. Thecurrentratingisbasedonthet≤10sthermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4603
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS P-Channel
30
25
20
15
10
5
30
25
20
15
10
5
-4.5V
-10V
-6V
-5V
VDS=-5V
-4V
-3.5V
125°C
25°C
3.5
VGS=-3V
3
0
0
0
1
2
4
5
0
0.5
1
1.5
2
2.5
3
4
4.5
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
60
55
50
45
40
35
30
25
20
15
10
1.6
1.4
1.2
1
ID=-6A
VGS=-4.5V
VGS=-10V
VGS=-4.5V
VGS=-10V
0.8
0
25
50
75
100
125
150
175
0
5
10
15
20
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
70
60
50
40
30
20
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-6A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4603
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS P-Channel
1500
1250
1000
750
500
250
0
10
8
VDS=-15V
ID=-6A
Ciss
6
4
Coss
Crss
2
0
0
4
8
12
16
20
0
5
10
15
-VDS (Volts)
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C, TA=25°C
RDS(ON)
TJ(Max)=150°C
TA=25°C
10µs
100µs
limited
0.1s
1ms
10ms
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
相关型号：
©2020 ICPDF网 联系我们和版权申明