AO4566 [AOS]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AO4566 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总5页 (文件大小：343K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4566
30V N-Channel MOSFET
General Description
Product Summary
VDS
30V
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
12A
< 11mΩ
< 17mΩ
Application
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
V
Gate-Source Voltage
VGS
±20
12
TA=25°C
TA=70°C
Continuous Drain
CurrentG
ID
9.4
A
Pulsed Drain Current C
IDM
48
Avalanche Current C
IAS
15
A
mJ
V
Avalanche energy L=0.1mH C
EAS
VSPIKE
11
VDS Spike
100ns
36
TA=25°C
TA=70°C
2.5
PD
W
°C
Power Dissipation B
1.6
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
42
Max
50
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
70
85
RθJL
20
30
Rev 0: Aug 2012
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Page 1 of 5
AO4566
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS，ID=250µA
VGS=10V, ID=12A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.3
11
nA
V
VGS(th)
1.3
1.8
9
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
12.5
13.5
45
15
VGS=4.5V, ID=10A
VDS=5V, ID=12A
IS=1A,VGS=0V
17
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.72
1
V
Maximum Body-Diode Continuous Current
3.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
542
233
31
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1
2
3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9
12.2
5.8
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
4.3
2.2
1.7
4
VGS=10V, VDS=15V, ID=12A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=1.25Ω,
RGEN=3Ω
3.5
18
3
ns
tD(off)
tf
ns
ns
trr
IF=12A, dI/dt=500A/µs
IF=12A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
9.7
ns
Qrr
nC
11.5
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Aug 2012
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Page 2 of 5
AO4566
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
50
40
30
20
10
0
10V
4.5V
6V
VDS=5V
4V
3.5V
125°C
25°C
VGS=3.0V
4
0
1
2
3
4
5
0
1
2
3
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
18
16
14
12
10
8
1.6
VGS=4.5V
VGS=10V
ID=12A
1.4
1.2
1
VGS=4.5V
VGS=10V
ID=10A
6
0.8
4
0
25
50
75
100
125
150
175
0
3
6
9
12
15
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
25
20
15
10
5
1.0E+01
ID=12A
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
0
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Aug 2012
www.aosmd.com
Page 3 of 5
AO4566
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=15V
ID=12A
8
Ciss
600
400
200
0
6
Coss
4
2
Crss
0
0
2
4
6
8
10
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
IDM limited
1000
100.0
10.0
1.0
TA=25°C
10µs
100µs
100
10
1
1ms
RDS(ON) @10V
limited
10ms
0.1
10s
DC
TJ(Max)=150°C
TA=25°C
0.0
1E-05
0.001
0.1
10
1000
0.01
0.1
1
10
100
VDS (Volts)
* VGS > minimum VGS at which RDS(ON) is specified
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=85°C/W
1
0.1
0.01
PD
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Aug 2012
www.aosmd.com
Page 4 of 5
AO4566
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Ig
Rev 0: Aug 2012
www.aosmd.com
Page 5 of 5
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