AO4588 [AOS]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AO4588 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4588
30V N-Channel MOSFET
General Description
Product Summary
VDS
30V
The AO4588 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =4.5V)
20A
< 4.8mΩ
< 6.2mΩ
ESD Protected
100% UIS Tested
100% Rg Tested
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
V
V
VGS
TA=25°C
TA=70°C
20
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C
ID
A
15.5
140
IDM
IAS, IAR
EAS, EAR
45
A
Avalanche energy L=0.1mH C
101
mJ
TA=25°C
Power Dissipation B
TA=70°C
3.1
PD
W
°C
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
59
75
RθJL
16
24
Rev 0: June 2011
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Page 1 of 6
AO4588
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
36
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
V
DS=0V, VGS= ±16V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
µA
V
VGS(th)
ID(ON)
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
1.3
1.85
2.4
140
A
3.95
6
4.8
7.3
6.2
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=16A
4.9
85
mΩ
S
VDS=5V, ID=20A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.7
1
V
Maximum Body-Diode Continuous Current
4.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1950 2445 2940
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
270
130
1.2
390
220
2.4
510
310
3.6
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
32
15
41
19
50
24
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7.2
6.6
7
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
5
ns
tD(off)
tf
41.5
10.5
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
17.5
31
22
40
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: June 2011
www.aosmd.com
Page 2 of 6
AO4588
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
80
60
40
20
0
10V
VDS=5V
3.5V
4V
4.5V
125°C
3V
25°C
4
VGS=2.5V
0
1
2
3
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
6
5
4
3
2
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
ID=20A
VGS=10V
=4.5V
VGS
ID=16A
0.8
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
12
10
8
1.0E+02
1.0E+01
ID=20A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
6
4
25°C
8
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: June 2011
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Page 3 of 6
AO4588
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3600
10
VDS=15V
ID=20A
3200
2800
2400
2000
1600
1200
800
8
Ciss
6
4
Coss
2
400
Crss
0
0
0
10
20
30
40
50
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
1000.0
100.0
10.0
1.0
TA=25°C
TA=100°C
10µs
RDS(ON)
limited
100µs
TA=150°C
1m
10ms
TA=125°C
TJ(Max)=150°C
TA=25°C
10s
DC
0.1
0.0
1
0.01
0.1
1
10
100
1
10
100
1000
VDS (Volts)
Time in avalanche, tA (µs)
Figure 9: Single Pulse Avalanche capability (Note
C)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10000
1000
100
10
TA=25°C
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 0: June 2011
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Page 4 of 6
AO4588
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
1
0.1
PD
0.01
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: June 2011
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Page 5 of 6
AO4588
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0: June 2011
www.aosmd.com
Page 6 of 6
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