AO4498E [FREESCALE]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AO4498E |
| 厂家： | 
Freescale |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总5页 (文件大小：389K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4498E
30V N-Channel MOSFET
General Description
The AO4498E combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON)
and battery protection applications.
. This device is ideal for load switch
Features
VDS
30V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
18A
< 5.8mΩ
< 8.5mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
18
V
V
VGS
TA=25°C
TA=70°C
Continuous Drain
Current
ID
14
A
Pulsed Drain Current C
IDM
PD
120
3.1
TA=25°C
TA=70°C
W
°C
Power Dissipation B
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
RθJA
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
Steady-State
Steady-State
59
16
75
24
RθJL
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AO4498E
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
36
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=18A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±10
2.3
µA
V
VGS(th)
ID(ON)
1.3
1.8
120
A
4.8
7.4
6.8
50
5.8
8.9
8.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=16A
mΩ
S
VDS=5V, ID=18A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
0.7
1
4
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1840 2300 2760
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
230
145
0.6
330
240
1.25
430
340
1.9
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=18A
VGS=10V, VDS=15V, RL=0.83Ω,
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
34
16
5.6
6
42
20
7
50
24
8.4
14
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
10
8
10
33
8
ns
R
GEN=3Ω
tD(off)
tf
ns
ns
trr
IF=18A, dI/dt=500A/µs
IF=18A, dI/dt=500A/µs
10
22
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
12.5
27
15
32
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AO4498E
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
120
VDS=5V
10V
6V
4.5V
100
80
60
40
20
0
80
4V
60
40
3.5V
25°C
4
20
0
125°C
VGS=3V
4
0
1
2
3
5
0
1
2
3
5
6
V
DS (Volts)
V
GS(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
12
10
8
1.8
1.6
1.4
1.2
1
VGS=10V
ID=18A
VGS=4.5V
6
VGS=4.5V
ID=16A
4
VGS=10V
2
0
0.8
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
20
15
10
5
1.0E+02
1.0E+01
ID=18A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
125°C
25°C
0
2
4
6
8
10
VGS (Volts)
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
V
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AO4498E
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
3000
2500
2000
1500
1000
500
10
VDS=15V
ID=18A
8
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
DS (Volts)
20
25
30
0
5
10
15
20
25
30
35
40
45
Q
g (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10000
1000
100
10
1000.0
100.0
10.0
1.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
10s
DC
0.1
TJ(Max)=150°C
TA=25°C
0.0
0.01
0.1
1
10
100
1
VDS (Volts)
0.00001
0.001
0.1
Pulse Width (s)
10
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
1
0.1
PD
Single Pulse
0.01
0.001
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AO4498E
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Ig
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