AO4496 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AO4496 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4496
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4496/L uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a DC-DC converter
application. AO4496 and AO4496L are electrically
identical.
VDS (V) = 30V
ID = 10A
RDS(ON) < 19.5mΩ (VGS = 10V)
(VGS = 10V)
RDS(ON) < 26mΩ
(VGS = 4.5V)
UIS TESTED!
Rg, Ciss, Coss, Crss Tested
-RoHS Compliant
-AO4496L is Halogen Free
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings TJ=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
Pulsed Drain Current B
Avalanche Current G
±20
10
V
TA=25°C
TA=70°C
ID
7.5
A
IDM
IAR
EAR
50
17
Repetitive avalanche energy L=0.1mH G
14
mJ
W
TA=25°C
Power Dissipation A
TA=70°C
3.1
PD
2.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady State
Steady State
59
75
RθJL
16
24
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4496
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID = 250µA, VGS = 0V
30
V
VDS = 30V, VGS = 0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ = 55°C
TJ=125°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS = 0V, VGS = ±20V
±100
2.5
nA
V
VGS(th)
ID(ON)
VDS = VGS ID = 250µA
VGS = 10V, VDS = 5V
VGS = 10V, ID = 10A
1.4
50
1.8
A
16
24
19.5
29
RDS(ON)
Static Drain-Source On-Resistance
mΩ
VGS = 4.5V, ID = 7.5A
21
26
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
DS = 5V, ID = 10A
30
S
V
A
IS = 1A,VGS = 0V
0.76
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
550
110
55
715
5.5
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS=0V, VDS=0V, f=1MHz
3
4
SWITCHING PARAMETERS
Qg (10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.8
4.6
1.8
2.2
5
13
nC
nC
nC
nC
ns
Qg (4.5V)
6.1
VGS=10V, VDS=15V, ID=10A
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=15V, RL= 1.5Ω,
3.2
24
6
ns
R
GEN=3Ω
tD(off)
tf
ns
ns
trr
IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=100A/µs
22
14
29
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev2: July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4496
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
50
40
30
20
10
0
VDS= 5V
10V
4.5V
4V
3.5V
125°C
VGS= 3V
25°C
0
1
2
3
4
5
1
2
3
4
5
V
GS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
26
24
22
20
18
16
14
1.8
1.6
1.4
1.2
1.0
0.8
VGS= 10V
ID= 10A
VGS= 4.5V
VGS= 4.5V
ID= 7.5A
VGS= 10V
30
0
5
10
15
20
25
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
50
1E+02
1E+01
1E+00
1E-01
1E-02
ID= 10A
45
40
35
30
125°C
125°C
1E-03
25
G
1E-04
20
25°C
25°C
1E-05
15
1E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
V
SD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4496
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
600
400
200
0
10
8
VDS= 15V
ID= 10A
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
25
30
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
100
10
100
10
TJ(Max)=150°C
TA=25°C
10µs
100µs
1ms
RDS(ON)
1
limited
10ms
100ms
10s
0.1
0.01
TJ(Max)=150°C
TA=25°C
DC
1
10100
0.0001
0.01
1
100
0.1
1
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
1
0.1
P
G
D
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4496
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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