AO4494L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AO4494L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4494L
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4494L combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is for PWM
applications.
VDS (V) = 30V
ID = 18A
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
RDS(ON) < 6.5mΩ
DS(ON) < 9.5mΩ
R
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% R g Tested!
D
SOIC-8
D
G
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
A
TC=25°C
TC=70°C
18
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C
ID
14
IDM
IAR
130
32
A
Repetitive avalanche energy L=0.1mH C
EAR
51
3.1
mJ
TC=25°C
Power Dissipation B
TC=70°C
PD
W
2
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
28
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
59
75
Steady-State
Steady-State
RθJL
16
24
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=125°C
TJ=125°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
±100
2.5
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1.5
2
V
GS=10V, VDS=5V
GS=10V, ID=18A
130
A
V
5.4
8.4
7.5
70
6.5
10.1
9.5
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=16A
VDS=5V, ID=18A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.75
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1270 1590 1900
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
170
87
240
145
1.5
310
200
2.3
V
GS=0V, VDS=0V, f=1MHz
0.8
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
24
12
30
15
36
18
6.2
11
nC
nC
nC
nC
ns
V
V
GS=10V, VDS=15V, ID=18A
4.2
4.7
5.2
7.8
6.7
3.5
22.5
4
Qgd
tD(on)
tr
tD(off)
tf
GS=10V, VDS=15V, RL=0.83Ω,
GEN=3Ω
ns
R
ns
ns
trr
IF=18A, dI/dt=500A/µs
IF=18A, dI/dt=500A/µs
22
19
28
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
34
30
ns
Qrr
24
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev0: Sept 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
120
100
80
100
80
60
40
20
0
10V
5V
VDS=5V
6V
7V
4.5V
4V
60
3.5V
VGS=3V
4
40
125°C
25°C
4
20
0
0
1
2
3
5
6
0
1
2
3
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
12
10
8
1.8
1.6
1.4
1.2
1
VGS=10V
ID=18A
VGS=4.5V
6
VGS=4.5V
ID=16A
VGS=10V
4
0.8
2
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25
20
15
10
5
1.0E+02
ID=18A
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
2
4
6
8
10
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2200
2000
1800
1600
1400
1200
1000
800
10
Ciss
VDS=15V
ID=18A
8
6
4
600
Coss
2
400
200
Crss
0
0
0
5
10
15
Qg (nC)
20
25
30
0
5
10
15
VDS (Volts)
20
25
30
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
90.00
80.00
70.00
60.00
50.00
40.00
30.00
20.00
1000.0
100.0
10.0
1.0
TA=25°C
RDS(ON)
limited
10µs
TA=100°C
TA=150°C
100µs
1ms
TA=125°C
10ms
100ms
10s
TJ(Max)=150°C
TA=25°C
0.1
DC
0.0
0.000001
0.00001
0.0001
0.001
0.1
1
10
100
Time in avalanche, tA (s)
VDS (Volts)
Figure 12: Single Pulse Avalanche capability
(Note C)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
TA=25°C
100
10
1
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
T
1
0.1
PD
0.01
0.001
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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