AO4410L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AO4410L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4410
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4410 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity,
body diode characteristics and ultra-low gate
resistance. This device is ideally suited for use as a
low side switch in Notebook CPU core power
conversion. Standard product AO4410 is Pb-free
(meets ROHS & Sony 259 specifications). AO4410L
is a Green Product ordering option. AO4410 and
AO4410L are electrically identical.
VDS (V) = 30V
ID = 18A
(VGS = 10V)
RDS(ON) < 5.5mΩ (VGS = 10V)
RDS(ON) < 6.2mΩ (VGS = 4.5V)
D
S
S
S
S
G
D
D
D
D
G
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±12
V
A
TA=25°C
TA=70°C
18
ID
15
Pulsed Drain Current B
IDM
80
3
TA=25°C
TA=70°C
PD
W
Power Dissipation
2.1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
59
75
RθJL
16
24
Alpha & Omega Semiconductor, Ltd.
AO4410
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
0.005
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±12V
100
1.5
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
0.8
80
1.1
VGS=4.5V, VDS=5V
A
V
GS=10V, ID=18A
4.7
6.4
5.5
7.4
6.2
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=15A
VDS=5V, ID=18A
IS=1A,VGS=0V
5.2
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
102
0.64
S
V
A
1
Maximum Body-Diode Continuous Current
4.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
9130 10500
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
625
387
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=18A
0.4
0.5
85
SWITCHING PARAMETERS
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
72.4
13.4
16.8
11
nC
nC
nC
ns
ns
ns
ns
15
11
7
VGS=10V, VDS=15V, RL=0.83Ω,
RGEN=3Ω
tD(off)
tf
99
135
19.5
40
13
trr
IF=18A, dI/dt=100A/µs
IF=18A, dI/dt=100A/µs
33
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
22.2
30
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 4 : May 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
10
0
10V
2.5V
VDS=5V
VGS=2V
125°C
25°C
2
0
1
2
3
4
5
0
0.5
1
1.5
2.5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
6.0
5.5
5.0
4.5
4.0
1.6
1.4
1.2
1
VGS=4.5V
ID=18A
VGS=4.5V
VGS=10V
VGS=10V
0.8
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
16
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
12
8
ID=18A
125°C
125°C
25°C
25°C
4
0
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100000
5
4
3
2
1
0
VDS=15V
ID=18A
Ciss
10000
1000
100
Coss
Crss
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
60
70
80
90
0
5
10
15
DS (Volts)
20
25
30
V
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
100
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
10µs
100µs
80
60
40
20
0
1ms
10ms
0.1s
1s
10s
DC
TJ(Max)=150°C
TA=25°C
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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