AO4405 [ALPHA]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AO4405 |
| 厂家： | 
ALPHA INDUSTRIES |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Rev 3: Nov 2004
AO4405, AO4405L ( Green Product )
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4405 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications. AO4405L( Green Product ) is offered in
a lead-free package.
VDS (V) = -30V
ID = -6.0A
RDS(ON) < 50mΩ (VGS = -10V)
RDS(ON) < 85mΩ (VGS = -4.5V)
D
S
SOIC-8
Top View
S
S
S
G
D
D
D
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
-30
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A
VGS
±20
TA=25°C
TA=70°C
-6.0
ID
-5.1
A
Pulsed Drain Current B
IDM
-30
TA=25°C
TA=70°C
3
PD
W
Power Dissipation A
2.1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
31
59
Max
40
75
Units
°C/W
°C/W
°C/W
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
16
24
Alpha & Omega Semiconductor, Ltd.
AO4405, AO4405L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-24V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
V
DS=0V, VGS=±20V
DS=VGS ID=-250µA
GS=-10V, VDS=-5V
GS=-10V, ID=6A
±100
-3
nA
V
VGS(th)
ID(ON)
-1
-1.8
-30
A
40
55
50
70
85
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4A
65
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-6A
IS=-1A,VGS=0V
6
9.5
-0.78
S
V
A
-1
Maximum Body-Diode Continuous Current
-4.2
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
700
112
78
840
pF
pF
pF
Ω
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS=0V, VDS=0V, f=1MHz
10
15
18
SWITCHING PARAMETERS
Qg (10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
14.7
7.6
2
nC
nC
nC
nC
ns
Qg (4.5V)
VGS=-10V, VDS=-15V, ID=-6A
Qgs
Qgd
tD(on)
tr
3.8
8.6
5
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=2.5Ω,
ns
RGEN=3Ω
tD(off)
tf
28.2
13.5
24
ns
ns
trr
IF=-6A, dI/dt=100A/µs
IF=-6A, dI/dt=100A/µs
30
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
14.7
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4405, AO4405L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
20
15
10
5
-10V
-5V
-6V
-4.5V
VDS=-5V
-4V
6
-3.5V
4
125°C
VGS=-3V
2
25°C
-2.5V
4.00
0
0
0.00
1.00
2.00
3.00
5.00
0
1
2
-VGS(Volts)
3
4
-VDS (Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
100
80
60
40
20
1.6
1.4
1.2
1
VGS=-10V
VGS=-4.5V
VGS=-4.5V
VGS=-10V
ID=-5A
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
160
1E+01
1E+00
1E-01
1E-02
1E-03
140
120
100
80
ID=-5A
125°C
125°C
25°C
G
1E-04
60
25°C
40
1E-05
1E-06
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4405, AO4405L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
9
8
7
6
5
4
3
2
1
0
VDS=-15V
ID=-6A
1000
800
600
400
200
0
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-VDS (Volts)
Figure 8: Capacitance Characteristics
100
10
1
TJ(Max)=150°C
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
0.1s
10ms
1s
1
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
1
PD
G
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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