AM2306 [AITSEMI]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET;
| 型号： | AM2306 |
| 厂家： | 
AiT Semiconductor |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总8页 (文件大小：480K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM2306
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
FEATURES
The AM2306 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch and PWM
applications.
VDS = 30V,ID = 5.8A
R
R
DS(ON) < 31mΩ @ VGS=10V
DS(ON) < 43mΩ @ VGS=4.5V
High Power and current handing capability
Surface mount package
The AM2306 is available in SOT-23S package.
Available in SOT-23S Package
APPLICATION
Load switch
PWM application
ORDERING INFORMATION
TYPICAL APPLICATION
Package Type
SOT-23S
Part Number
AM2306E3SR
AM2306E3SVR
E3S
V: Halogen free Package
R: Tape & Reel
Note
AiT provides all RoHS products
Schematic diagram
REV3.1
- MAR 2011 RELEASED, FEB 2017 UPDATED -
- 1 -
AM2306
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
Gate
1
2
3
G
S
D
Source
Drain
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted
VDS, Drain-Source Voltage
30V
±20V
VGS, Gate-Source Voltage
ID, Drain Current-Continuous
IDM, Drain Current-Pulsed NOTE1
PD, Maximum Power Dissipation
5.8A
20A
1.4W
TJ, TSTG, Operating Junction and Storage Temperature Range
-55℃~150℃
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
NOTE1: Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTIC
Parameter
Symbol
RθJA
Limit
89
Unit
Thermal Resistance, Junction-to-Ambient NOTE2
℃/W
NOTE2: Surface Mounted on FR4 Board, t ≤ 10 sec.
REV3.1
- MAR 2011 RELEASED, FEB 2017 UPDATED -
- 2 -
AM2306
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise noted
Parameter
Off Characteristics
Symbol
Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BVDSS
IDSS
VGS=0V,ID=250μA
VDS=30V, VGS=0V
VGS=±20V, VDS=0V
30
-
33
-
-
1
V
μA
nA
IGSS
-
-
±100
On Characteristics NOTE3
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V,ID=5A
VGS=4.5V,ID=4A
VDS=5V,ID=5A
1.2
1.6
25.5
34
2.4
31
43
-
V
mΩ
S
-
-
-
Drain-Source On-state Resistance
Forward Transconductance
Dynamic CharacteristicsNOTE4
Input Capacitance
15
Ciss
Coss
Crss
-
-
-
255
45
-
-
-
VDS=15V,VGS=0V,
F=1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Switching CharacteristicsNOTE4
Turn-on Delay Time
35
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
4.5
2.5
-
-
-
-
-
-
-
Turn-on Rise Time
VDD=15V, RL=3Ω,
VGS=10V, RGEN=3Ω
ns
Turn-off Delay Time
14.5
3.5
Turn-off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
5.2
VDS=15A, IDS=5A,
VGS=10V
Gate-Source Charge
0.85
1.3
nC
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage NOTE3
Diode Forward Current NOTE2
VSD
IS
VGS=0V, IS=5A
-
-
-
-
1.2
5
V
A
NOTE3: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
NOTE4: Guaranteed by design, not subject to production
REV3.1
- MAR 2011 RELEASED, FEB 2017 UPDATED -
- 3 -
AM2306
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.
3.
5.
Switching Test Circuit
2.
4.
6.
Switching Waveforms
Output Characteristics
Transfer Characteristics
Drain-Source On-Resistance
Drain-Source On-Resistance
REV3.1
- MAR 2011 RELEASED, FEB 2017 UPDATED -
- 4 -
AM2306
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
7.
RDSON vs. VGS
8.
Drain-Source On-Resistance
9.
Gate Charge
10. Source- Drain Diode Forward
11. Capacitance vs. Vds
12. Safe Operation Area
REV3.1
- MAR 2011 RELEASED, FEB 2017 UPDATED -
- 5 -
AM2306
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
13. Normalized Maximum Transient Thermal Impedance
REV3.1
- MAR 2011 RELEASED, FEB 2017 UPDATED -
- 6 -
AM2306
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PACKAGE INFORMATION
Dimension in SOT-23S (Unit: mm)
SYMBOL
MIN
MAX
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
c
D
E
E1
e
0.950TYP
e1
L
1.800
2.000
0.550REF
L1
θ
0.300
0°
0.500
8°
REV3.1
- MAR 2011 RELEASED, FEB 2017 UPDATED -
- 7 -
AM2306
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV3.1
- MAR 2011 RELEASED, FEB 2017 UPDATED -
- 8 -
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