ATF-21170 [AGILENT]
0.5-6 GHz Low Noise Gallium Arsenide FET; 0.5-6 GHz的低噪声砷化镓场效应管
| 型号： | ATF-21170 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | 0.5-6 GHz Low Noise Gallium Arsenide FET |
| 文件： | 总3页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
0.5–6 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-21170
housed in a hermetic, high
Features
70 mil Package
reliability package. This device is
designed for use in low noise or
medium power amplifier applica-
tions in the 0.5-6 GHz frequency
range.
• Low Noise Figure:
0.9dBTypicalat4 GHz
• High Associated Gain:
13.0 dBTypicalat4 GHz
• High Output Power:
23.0 dBmTypicalP 1dB at4 GHz
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
750 microns.Provengoldbased
metallization systems and nitride
passivation assure a rugged,
reliable device.
• Hermetic Gold-Ceramic
Microstrip Package
Description
The ATF-21170 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
NFO
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA
f=2.0GHz
f=4.0GHz
f=6.0GHz
dB
dB
dB
0.6
0.9
1.2
1.1
GA
Gain @ NFO: VDS = 3 V, IDS = 20 mA
f=2.0GHz
f=4.0GHz
f=6.0GHz
dB
dB
dB
16.0
13.0
10.0
12.0
P1 dB
Power Output @ 1 dB Gain Compression:
VDS =5V,IDS =80mA
f=4.0GHz dBm
23.0
G1 dB
gm
1 dB Compressed Gain: VDS = 5 V, IDS = 80 mA
Transconductance: VDS =3 V, VGS = 0 V
Saturated Drain Current: VDS = 3 V, VGS = 0 V
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA
f=4.0GHz
dB
mmho 70
13.0
120
120
-1.5
IDSS
VP
mA
V
80
200
-0.8
-3.0
5965-8718E
5-46
ATF-21170 Absolute Maximum Ratings
Notes:
Absolute
Maximum[1]
+7
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 4 mW/°C for
TCASE >25°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Units
V
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation[2,3]
Channel Temperature
Storage Temperature
V
V
mA
mW
°C
-4
-8
IDSS
600
175
°C
-65to+175
Thermal Resistance:
Liquid Crystal Measurement:
θjc =250°C/W;TCH=150°C
1 µmSpotSize[4]
18
15
ATF-21170 Noise Parameters: VDS = 3 V, IDS = 20 mA
G
A
Γopt
Freq.
GHz
NFO
dB
12
9
2.0
1.5
1.0
0.5
0
RN/50
Mag
Ang
0.5
1.0
2.0
4.0
8.0
0.4
0.5
0.6
0.9
1.2
.93
.85
.70
.59
.54
17
35
70
148
-177
.90
.70
.46
.14
.09
6
NF
O
1.0
2.0
4.0
6.0 8.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 3V, IDS = 20 mA, TA = 25°C.
ATF-21170 Typical Performance, TA = 25°C
16
14
12
10
25
20
15
10
5
30
25
MSG
MSG
G
A
20
15
10
5
MAG
MAG
2
|
|S
21
1.5
1.0
0.5
0
2
|
|S
21
NF
O
0
0.5
0
0.5
0
10
20
30
40
50
60
1.0
2.0
4.0 6.0 8.0 10.0
1.0
2.0
4.0 6.0 8.0 10.0
I
(mA)
FREQUENCY (GHz)
FREQUENCY (GHz)
DS
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS
VDS = 3V, f = 4.0 GHz.
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 80 mA.
.
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
5-47
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VDS = 3V,IDS = 20mA
Freq.
GHz
S11
Ang.
S21
Mag.
S12
Mag.
S22
Mag.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
.96
.91
.82
.74
.70
.65
.64
.65
.66
.66
.67
-31
-55
-95
15.5
14.2
12.1
10.2
8.8
7.3
6.3
5.4
4.5
5.93
5.14
4.05
3.23
2.74
2.33
2.07
1.86
1.67
1.48
1.29
157
137
106
82
61
41
22
4
-13
-30
-47
-29.4
-24.3
-20.4
-19.5
-18.7
-18.2
-17.7
-17.5
-17.0
-16.6
-16.2
.034
.061
.096
.106
.116
.123
.131
.134
.141
.148
.155
72
56
36
21
9
.46
.42
.39
.35
.33
.30
.29
.26
.26
.26
.25
-23
-42
-70
-91
-109
-127
-145
-167
164
-123
-147
-170
167
146
126
107
87
-1
-10
-17
-28
-39
-50
3.4
2.2
140
114
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VDS = 5V,IDS = 80mA
Freq.
GHz
S11
Ang.
S21
Mag.
S12
Mag.
S22
Mag.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
.95
.89
.78
.69
.64
.60
.61
.61
.63
.64
.64
-43
-64
18.3
17.4
14.6
12.4
10.7
9.1
7.9
6.9
6.2
5.3
8.24
7.28
5.36
4.18
3.42
2.85
2.47
2.22
2.05
1.85
1.68
149
133
101
79
56
37
18
2
-14
-32
-48
-32.4
-29.9
-25.2
-23.4
-22.7
-21.7
-20.4
-19.3
-17.9
-16.6
-15.3
.024
.032
.055
.068
.073
.082
.095
.108
.127
.148
.172
67
59
44
34
31
24
19
12
7
.49
.46
.40
.38
.36
.35
.33
.31
.27
.27
.29
-17
-26
-45
-60
-81
-100
-115
-132
-152
-179
165
-106
-133
-160
175
154
136
120
102
86
0
-13
4.5
A model for this device is available in the DEVICE MODELS section.
70 mil Package Dimensions
.040
1.02
SOURCE
4
.020
.508
GATE
DRAIN
3
1
Notes:
(unless otherwise specified)
2
SOURCE
in
1. Dimensions are
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.070
1.70
.004 ± .002
.10 ± .05
.495 ± .030
12.57 ± .76
.035
.89
5-48
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