APTGT400U120D4 [ADPOW]
Single switch Trench IGBT Power Module; 单开关沟道IGBT功率模块
| 型号： | APTGT400U120D4 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Single switch Trench IGBT Power Module |
| 文件： | 总3页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT400U120D4
VCES = 1200V
IC = 400A @ Tc = 80°C
Single switch
Trench IGBT® Power Module
Application
•
•
•
•
Welding converters
1
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
3
Features
Trench + Field Stop IGBT® Technology
5
•
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
2
•
•
Kelvin emitter for easy drive
Low stray inductance
-
-
M6 connectors for power
M4 connectors for signal
2
1
•
High level of integration
Benefits
4
•
Outstanding performance at high frequency
operation
5
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
3
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
600
400
800
±20
2250
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
SCSOA Short Circuit Safe Operating Area
1600A@900V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 3
APT website – http://www.advancedpower.com
APTGT400U120D4
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
1200
BVCES Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 12mA
VGE = 0V, VCE = 1200V
V
mA
ICES
Zero Gate Voltage Collector Current
8
Tj = 25°C
Tj = 125°C
VGE = VCE , IC = 12mA
VGE = 20V, VCE = 0V
1.4
1.7
2.0
5.8
2.1
VGE = 15V
IC = 400A
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
5.0
6.5
600
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min Typ Max Unit
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
28
nF
1.6
1.2
280
90
Inductive Switching (25°C)
V
GE = ±15V
ns
VBus = 600V
IC = 400A
RG = 1.8Ω
Inductive Switching (125°C)
VGE = ±15V
Td(off) Turn-off Delay Time
550
Tf
Td(on)
Tr
Fall Time
130
300
100
650
180
Turn-on Delay Time
Rise Time
ns
V
Bus = 600V
Td(off) Turn-off Delay Time
Tf Fall Time
IC = 400A
RG = 1.8Ω
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IF = 400A
VGE = 0V
Tj = 25°C
Tj = 125°C
1.6
1.6
2.1
VF
Diode Forward Voltage
Reverse Recovery Energy
V
IF = 400A
Erec
VR = 600V
di/dt =900A/µs
IF = 400A
VR = 600V
di/dt =900A/µs
Tj = 125°C
34
mJ
Tj = 25°C
40
72
Qrr
Reverse Recovery Charge
µC
Tj = 125°C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.055
0.125
°C/W
RthJC
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
VISOL
2500
V
TJ
TSTG
TC
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
-40
-40
-40
3
150
125
125
5
2
420
°C
M6
M4
Torque Mounting torque
Wt Package Weight
N.m
g
1
2 - 3
APT website – http://www.advancedpower.com
APTGT400U120D4
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
3 - 3
APT website – http://www.advancedpower.com
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